DIODE PH 6 Search Results

marking code PH 200

Contextual Info: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 70 V Average Rectified Forward Current

marking code PH 200

Abstract: BAV70WS
Contextual Info: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak repetitive reverse voltage VRRM 70 V Average rectified Forward current

EBF83

Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Contextual Info: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs

marking code PH 200

Contextual Info: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 70 V Average Rectified Forward Current

939 diode

Abstract: TRIODE EAC91 CDA 5.5 MC la 4985
Contextual Info: PH ILIPS EAC 9 1 DIODE-TRIODE for use as U.H.F. frequency changer DIODE-TRIODE pour utilisation en changeuse de fréquence U.H.F. DIODE-TRIODE zur Verwendung als UKF-MisehrÖhre Heating :indirect by A.C. or D.O. series or parallel supply Chauffage: indirect par C.A. ou C.C.

BUK637-500B

Contextual Info: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode

34036

Abstract: ph c13 diode HUM2010 HUM2015 HUM2020 UM9552 diode mri power
Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 HUM2010 HUM2015 HUM2020 Features • • • • • • PIN DIODE HIGH POWER STUD High Power Stud Mount Package High Zero Bias Impedance Very Low Inductance and Capacitance No Internal Lead Straps

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX20N60A Features • • • • • • • 600 Volts 20 Amps 350 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

thermistor 054

Contextual Info: N EC b2E T> • ELECTRONI CS INC b42752S DQ3fiG5b EDM H N E C E DATA SHEET N EC LASER DIODE MODULE NDL5853P, NDL5853PA ELECTRON DEVICE 1 550 nm O PTICAL FIBER COMMUNICATIONS InGaAsP PH A SE-SH IFTED DFB-DC-PBH LA SER DIODE MODULE FOR 2 .5 Gb/s DESCRIPTIO N

Contextual Info: TO S H IBA 6N135,6N136 T O S H IB A PH O TO C O U PLER GaA£As IRED & PH OTO IC 6N135, 6N136 D IG ITAL LOGIC ISO LATION. U n it in mm LINE RECEIVER. P O W E R S U PP LY CO NTRO L SW IT C H IN G P O W E R S U PP LY TRA N SISTO R INVERTER The T O S H IB A 6N135 and 6N136 consists of a high em itting diode

EB41

Contextual Info: EB41 PH ILIPS D O UBLE DIODE with separate cathodes DIO D E DOUBLE avec cathodes séparées DOPPELDIODE mit getrennten Kathoden Heating: indirect by A.C. or D.C.; parallel supply Chauffage: indirect par C.A. ou C.C.; alimentation en parallèle Heizung: indirekt

Contextual Info: Micnosemi H m m Santa Ana, CA Progress Powered by Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX11P50A Features 500 Volts High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode

mmbd202

Contextual Info: MMBD202CCW SILICON EPITAXIAL PLANAR SWITCHING DIODE Application • Ultra high speed switching 3 1 2 Marking Code: PH Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 80 V Reverse Voltage VR 80 V Average Forward Current

Contextual Info: DATA SHEET PHOTO DIODE NDL5471R Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 0120 ¡urn InGaAs PIN PHOTO DIODE RECEPTACLE MODULE DESCRIPTION T h e N D L54 71 R S eries is an InG aA s PIN ph oto diod e rece ptacle m odule e s p e c ia lly d e sig n e d for a d e te cto r of long

Contextual Info: N E C ELECTRONICS INC b2E D • b427S25 0030107 STb « N E C E DATA SHEET NEC PHOTO DIODE NDL5500 ELECTRON DEVICE 1 000 to 1 600 nm OPTICAL FIBER CO M M U N ICATIO N S 050 InGaAs A V A L A N C H E PH OTO DIODE D ESCRIPTION NDL5500 is an InGaAs Avalanche Photodiode especially designed for a detector of long wavelength optical fiber communica­

PM 438 BL

Contextual Info: N AUER PH ILI PS/ DI SCR ETE b^E bbS3T31 QDSbMb? f l l f l • APX D _ preliminary sp e c u la tio n Knmps sem iconductors_ BY428 Very fast parallel efficiency diode DESCRIPTION QUICK REFEREN CE DATA Double-diffused glass passivated

DC1536G

Contextual Info: PH ffl G E C PLESSEY DC1536F/36G SILICON SCHOTTKY X-BAND MICROSTRIP BEAM LEAD MIXER DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance mixers. These diodes can be supplied in matched pairs by the

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX75N10A Features • • • • • • • 100 Volts 75 Amps 20 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

Contextual Info: Micnosemi H m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Pow ered b y Technology MSAEZ33N20A MSAFZ33N20A Features 200 Volts Ultrafast rectifier in parallel with the body diode (M SAE type only)

ID100

Abstract: MSAFX24N50A
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features • • • • • • • 500 Volts 24 Amps 230 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

ID100

Abstract: MSAFX50N20A
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX50N20A Features • • • • • • • 200 Volts 50 Amps 45 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

Contextual Info: • M l Watertown. MA a w MMV I V W 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 m V l M MÊ HUM 2010 HUM 2015 HUM 2020 Features PIN DIODE HIGH POWER STUD High Power Stud Mount Package high Zero Bias Impedance Very Low Inductance and Capacitance

MSC0867

Contextual Info: • M l Watertown. MA m 580 P le asa nt St. W a te rto w n , M A 02172 PH: 617 926-0404 FAX: (617) 924-1235 Micnosemi Pm t/rM A Pow ar& dtty ree/iiwtogy Features • • • • PIN DIODE ATTENUATOR Low Frequency Attenuator HF/LF Band Operation Long Lifetime (70 ms typ.)

Contextual Info: • ■■ Micmsemi Santa Ana, CA 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 m Progresa P ow ered b y Technology Capabilities Data Sheet Solar Array Bypass Diode Features • • • • • • Very Thin Construction Low leakage reverse current