DIODE PH 12 Search Results

marking code PH 200

Abstract: BAV70WS
Contextual Info: BAV70WS SMALL SIGNAL DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PH Top View Marking Code: "PH" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak repetitive reverse voltage VRRM 70 V Average rectified Forward current

EBF83

Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Contextual Info: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs

939 diode

Abstract: TRIODE EAC91 CDA 5.5 MC la 4985
Contextual Info: PH ILIPS EAC 9 1 DIODE-TRIODE for use as U.H.F. frequency changer DIODE-TRIODE pour utilisation en changeuse de fréquence U.H.F. DIODE-TRIODE zur Verwendung als UKF-MisehrÖhre Heating :indirect by A.C. or D.O. series or parallel supply Chauffage: indirect par C.A. ou C.C.

BUK637-500B

Contextual Info: N APIER PH ILIPS/DISCR ETE bRE D • bbSBTBl 00 3 0 fl 7 D Philips Semiconductors *APX Product Specification PowerMOS transistor BUK637-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode

34036

Abstract: ph c13 diode HUM2010 HUM2015 HUM2020 UM9552 diode mri power
Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 HUM2010 HUM2015 HUM2020 Features • • • • • • PIN DIODE HIGH POWER STUD High Power Stud Mount Package High Zero Bias Impedance Very Low Inductance and Capacitance No Internal Lead Straps

thermistor 054

Contextual Info: N EC b2E T> • ELECTRONI CS INC b42752S DQ3fiG5b EDM H N E C E DATA SHEET N EC LASER DIODE MODULE NDL5853P, NDL5853PA ELECTRON DEVICE 1 550 nm O PTICAL FIBER COMMUNICATIONS InGaAsP PH A SE-SH IFTED DFB-DC-PBH LA SER DIODE MODULE FOR 2 .5 Gb/s DESCRIPTIO N

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER12N50A MSAFR12N50A Features • • • • • • • 500 Volts 12 Amps 400 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure

Contextual Info: Micnosemi H m m Santa Ana, CA Progress Powered by Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX11P50A Features 500 Volts High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode

MSC0266

Abstract: ID100 MSAER12N50A MSAFR12N50A uA555
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER12N50A MSAFR12N50A Features • • • • • • • 500 Volts 12 Amps 400 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX10N90A Features • • • • • • • 900 Volts 10 Amps 1.1 Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX75N10A Features • • • • • • • 100 Volts 75 Amps 20 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX20N60A Features • • • • • • • 600 Volts 20 Amps 350 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

Contextual Info: Micnosemi H m m Santa Ana, CA m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Progress Pow ered b y Technology MSAEZ33N20A MSAFZ33N20A Features 200 Volts Ultrafast rectifier in parallel with the body diode (M SAE type only)

ID100

Abstract: MSAFX24N50A
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features • • • • • • • 500 Volts 24 Amps 230 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability

Contextual Info: • M l Watertown. MA a w MMV I V W 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 m V l M MÊ HUM 2010 HUM 2015 HUM 2020 Features PIN DIODE HIGH POWER STUD High Power Stud Mount Package high Zero Bias Impedance Very Low Inductance and Capacitance

MSC0867

Contextual Info: • M l Watertown. MA m 580 P le asa nt St. W a te rto w n , M A 02172 PH: 617 926-0404 FAX: (617) 924-1235 Micnosemi Pm t/rM A Pow ar& dtty ree/iiwtogy Features • • • • PIN DIODE ATTENUATOR Low Frequency Attenuator HF/LF Band Operation Long Lifetime (70 ms typ.)

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAER38N10A MSAFR38N10A Features • • • • • • • 100 Volts 38 Amps 55 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure

Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEZ50N10A MSAFZ50N10A Features • • • • • • • 100 Volts 50 Amps 35 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure

ID100

Abstract: IRFC250 MSAEI38N10A MSAFI38N10A
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEI38N10A MSAFI38N10A Features • • • • • • • • 100 Volts 38 Amps 55 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure

ID100

Abstract: MSAEI30N20A MSAFI30N20A
Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEI30N20A MSAFI30N20A Features • • • • • • • 200 Volts 30 Amps 85 mΩ Ω Ultrafast rectifier in parallel with the body diode (MSAE type only) Rugged polysilicon gate cell structure

AV73

Abstract: Js SMD MARKING CODE SOT23 sot23 package marking AV smd DIODE code marking kA SMD IC marking 632 lm 9805
Contextual Info: DISC RETE SE M IC O N D U C TO R S InlEET BAV73 Dual high-speed switching diode in common cathode configuration 1997 May 06 Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors PH ILIPS PHILIPS Philips S e m i c o n d u c t o r s

Contextual Info: T O SH IB A TLP598B T O S H IB A PH O T O C O U PLER PH O TO R ELA Y TLP598B TELE C O M M U N IC A T IO N U nit in mm D ATA A C Q UISITIO N M E A S U R E M E N T IN ST R U M EN T A TIO N The TO SH IBA TLP598B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS F E T in a

TLP523

Contextual Info: TLP523.-2.-4 G aAs IRED S PH O TO -TRA N SISTO R T LPS 2 3 PR O G R A M M A B L E CONTROLLERS DC-OUTPUT M O D U LE SOLID STATE RELAY The TOSHIBA TLP523, -2 and -4 consists of a gallium arsenide infrared em itting diode coupled w ith a silicon, darlington connected,

DIODE T25 4 EO

Abstract: DIODE T25 4 bo DIODE T25 4 ko diode,FET BUK627-500B DIODE T25-4-bo
Contextual Info: Philips Components Data sheet status P ro d u c t s p e c ific a tio n date of issue March 1991 PH ILIP S N -channel en han cem en t m ode field-effect pow er transistor in a plastic full pack envelope. F R E D F E T with fast recovery reverse diode, particularly suitable