DIODE PH Search Results

Contextual Info: Ordering number : ENA1263 PN type Photo Diode LA0225CV For Optical Disk Blue-purple Laser Diode monitor Overview LA0225CV is a photo diode for optical disk blue-purple laser diode monitor. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm

laser diode 405nm

Abstract: "Photo Diode" a1263 LA0225CV 405nm diode 71608 blue Laser-Diode 405nm laser diode la0225
Contextual Info: Ordering number : ENA1263 PN type Photo Diode LA0225CV For Optical Disk Blue-purple Laser Diode monitor Overview LA0225CV is a photo diode for optical disk blue-purple laser diode monitor. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm

transistor a1001

Abstract: 4 PC blue Laser-Diode la0225 405nm laser
Contextual Info: Ordering number : ENA1001A PN type Photo Diode LA0225CS For Optical Disk Blue-purple Laser Diode monitors Overview LA0225CS is a photo diode for optical disk blue-purple laser diode monitors. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm

Contextual Info: Ordering number : ENA1001A PN type Photo Diode LA0225CS For Optical Disk Blue-purple Laser Diode monitors Overview LA0225CS is a photo diode for optical disk blue-purple laser diode monitors. Functions • The blue-purple sensitive PN type photo diode • Photo diode opening size: 1.0mm

109 DIODE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.

semikron skiip 342

Abstract: igbt bridge switching power supply IGBT PROTECTION DIODE
Contextual Info: SKiiP 3-phase bridge Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM Diode, T j = 150 °C, 10ms; sin

semikron skiip 232

Abstract: OF IGBT
Contextual Info: SKiiP 3-phase bridge Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and Inverse Diode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms IFSM Diode, T j = 150 °C, 10ms; sin

BAS70L

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring

BAS40L

Abstract: marking code s6 SOD-882L
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring

ovkd 01

Abstract: diode ovkd01 diode in 400
Contextual Info: Transmitting and Receiving Elements Receiving element SFH 203 P Fig.: SFH 203 P in diode socket LSTDL Type Description Fig.: SFH 203 P in diode socket LWMDL Fig.: SFH 203 P in diode socket OVKD 01 SFH 203 P PIN photo diode SFH 203 P is a planar silicon diode with a high cut-off frequency mounted

Thyristor MCD

Abstract: mdc 90-12 ABB thyristor modules 90-08io8 DIODE REDRESSEMENT mcd 132
Contextual Info: A S E A BROüJN/ABB ~fl3 FI Dcmfl30ó QQoans E F SEMICON • Netz-Thyristor-Diode-Module _ _ 1 T— 25-23 S 3 f£ v ~ : B ES Phase control Thyristor-Diode-Modules Daten pro Diode Oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

BAR66

Abstract: BA592 BA595 BA597 BA885 BAR14 BAR63-03W BAR64 BAR65-03W
Contextual Info: Application Note No. 058 Silicon Discretes Dr. Reinhard Gabl Predicting Distortion in Pin-Diode Switches This note describes the origin of distortion in pin-diode switches. Distortion is related to physical parameters of the diode and operating conditions and thus can be minimized by an appropriate diode

Contextual Info: Invisible optoelectronics device Infrared Diode Photo Diode Photo Transistor High power Infrared diode Formore,pleasevisithttp://www.betlux.com Infrared Emitters Part Number Φe （Mw Material BL-LS3528A0S1IRAC BL-LS3528A0S1IRAB BL-LS3528A0S1IRBC BL-LS3528A0S1IRBB

LED pigtailed

Abstract: Diode PH 13M
Contextual Info: M itsubishi O ptical D e vice C la ssifica tio n Item LD modules Wave length •1.3jum/1.55j«m Laser diode •0.98um/1.48Mm for pump Laser diode •InGaAs-PIN Photo diode •InGaAs-APO Photo diode •active diameter ¿20/* m ~«4300^m Device Package •TO CAN, Chip-on-Carrier

SOD80C

Abstract: M3D121 BAS85 smd diode marking Av 100H01 smd diode package sod80 PHILIPS DIODE SOD80 marking 37 schottky SMD 157 diode diode smd marking V
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET lfpage M3D121 BAS85 Schottky barrier diode Product specification Philips Semiconductors Product specification Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an

Contextual Info: IS455J IL08 * SIRICON PHOTO DIODE - TOP VIEW - 4 3 2 1 4 Vcc +5V CONSTANT VOLTAGE CIRCUIT PHOTO DIODE A 1 PHOTO DIODE B Io (CURRENT OUTPUT) CURRENT AMP 2, 3 GND

marking hz SOD-323

Abstract: diode sod 106 BAR63J BAS70-07 SOD Package
Contextual Info: BAR63J PIN DIODE FEATURES AND BENEFITS n n n Pin diode for high speed switching of RF signal Low forward voltage Very low capacitance A 35 K DESCRIPTION Single pin diode in SOD-323 package. This diode is intended to be used in mobile phone to switch the RF signal.

IDG 600

Abstract: M61880FP 20P2N-A M61880
Contextual Info: M61880FP Laser Diode Driver/Controller REJ03F0068-0100Z Rev.1.0 Sep.19.2003 Description The M61880FP is a laser diode driver/controller that performs drive and laser power control of a type of semiconductor laser diode in which the semiconductor laser diode anode and monitoring photodiode cathode are connected to the stem.

S4 SMD diode mark

Abstract: top mark smd Philips BA792 diode smd mark s4 SOD110 REFLOW Mam1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BA792 Band-switching diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Band-switching diode BA792 FEATURES • Ceramic SMD package • Low diode capacitance:

EBF83

Abstract: EN50011 Scans-0017839 CD2A battery operated cdi 2235S
Contextual Info: PH ILIPS EBF83 DOUBLE-DIODE PENTODE for use as I.F. amplifier, detector and A.G.C. diode in carradio sets. The tube can be directly operated from a 6 V or 12 V storage battery DOUBLE-DIODE PENTHODE pour l'utilisation comme amplificateur MF, comme détecteur et corne diode de C.A.V. dans récepteurs

Contextual Info: Philips Semiconductors Product spscMcation Schottky barrier diode BAS85 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is • High breakdown voltage

650nm 5mw laser module

Abstract: "red laser diode" Laser Diode Laser Diode 10 pin 650nm 5mw laser D650 650nm 5mw module 650NM D650-5 RED laser diode operating Temperature
Contextual Info: US-Lasers: 650nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 1 US-Lasers: 650nm-5mW - Red Laser Diode and Red Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diodes Laser Diode Module

ADB13

Contextual Info: DATA SHEET LASER DIODE NDL7001 1310 nm FIBER OPTIC COMMUNICATIONS InGaAsP M OW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1310 nm laser diode for fiber optic com m unications and have a M u ltip le Quantum W e ll M Q W structure and built-in InGaAs m onitor photo diode.