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    DIODE P 6000 Search Results

    DIODE P 6000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet
    CUZ8V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Datasheet
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    DIODE P 6000 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SÊ GEC P L E S S E Y S e p t e m b e r 1995 SEM IC O ND UC TO RS DS4086-2.2 TV30 RECTIFIER DIODE KEY PARAMETERS v RRM 2000V 335A *F A V 6000A ^FSM APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding.


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    DS4086-2 20UNF 37bfl522 PDF

    6ri30f

    Abstract: Diode C 1320 6RI30G-160 R702 2RI100E 2RI60E-060 6RI100E 6RI150E-060 6RI50E-060 IMF 080
    Contextual Info: DIODE M O D U LES | P f P i | Ratings and Specifications SutimtimB H 600 volts class general use diode m o d u les/E series D iivicu ly p t' V rrm V rsm lo Ifsm Ft V fm I rrm A m p s. A m p s. A 2s V o lts mA Rth j-C Package °C/W V o lts V o lts 6RI30F 060


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    6RI30F 6RI50E-060 6RI100E 6RI150E-060 2RI60E-060 2RI100E 2RI150fc 2RI250F-060 R604A R605A Diode C 1320 6RI30G-160 R702 IMF 080 PDF

    Contextual Info: ÜË GEC P L E S S E Y o c t o b e r 1995 SE M IC OND UC TOR S DS4231 -2.2 DSF21060SV FAST RECOVERY DIODE KEY PARAMETERS vR R M 6000V 1690A | A V 16000A FSM 1200(lC Q r 6 .5]lls *rr APPLICATIONS • Freewheel Diode. ■ Antiparallel Diode. ■ f Inverters.


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    DS4231 DSF21060SV 6000A DSF21060SV60 DSF21060SV59 DSF21060SV58 DSF21060SV57 DSF21060SV56 DSF21060SV55 37bfl522 PDF

    G 839 DIODE

    Abstract: 10E-02 QRSB165001
    Contextual Info: QRSB165001 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com High Voltage Single Diode Module 650 Amperes/11,000 Volts A D G C H B E 3 M 2 F 1 L K N P P R 3 S (3 PLACES) 2 RB Description: Powerex Single Diode Modules are


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    QRSB165001 Amperes/11 G 839 DIODE 10E-02 QRSB165001 PDF

    K50A

    Abstract: noise diode BA15d/19 S6 diode Scans-0017953 "noise diode"
    Contextual Info: K50A NOISE DIODE R are gas filled noise diode for use in waveguide system s in the 3 cm wave band QUICK REFERENCE DATA 18.75 dB F Noise level above 290 °K 6000 V Ignition voltage Vign > = m ax. 150 mA Anode cu rren t la HEATING: d irect, p arallel supply


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    PDF

    904nm

    Abstract: GaAs 904nm LD67 LD61 LD60 LP-23C 904nm laser diode
    Contextual Info: r LASER DIODE INC 15E D I SBÖSTÖS QDGGMSS E | a •a a I T -H I “ OS' _LD-60 SERIES_ LASER DIODE, INC. SINGLE HETEROJUNCTION GaAs LASER DIODES FEATURES High Efficiency at Low Drive Currents P Up to 20 Watts Peak Power Output P Operation to 75° C for Selected Devices


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    LD-60 904nm, 904nm GaAs 904nm LD67 LD61 LD60 LP-23C 904nm laser diode PDF

    Contextual Info: r; a i F r P i F S ììP Y SEPTEMBER 1996 SEM ICO ND UCTO RS ADVANCE ENGINEERING DATA DS4218-3.3 DSF20060SF FAST RECOVERY DIODE KEY PARAMETERS v RRM 6000V 780A J f AV 7800A FSM 1400(iC Qr 6.5jis », APPLICATIONS • Inverters. ■ Choppers. ■ Inverse Parallel Diode.


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    DS4218-3 DSF20060SF DSF20060SF60 DSF20060SF58 DSF20060SF56 DSF20060SF55 CB450. 37bflSS2 PDF

    Contextual Info: Si GEC P L E S S E Y august 1995 S E M I C O N D U C T O R S DS4191-2.3 DS2012SF RECTIFIER DIODE KEY PARAMETERS VRRM 6000V lF Av, 1015A lFSM 16500A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding.


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    DS4191-2 DS2012SF 6500A DS2012SF60 DS2012SF59 DS2012SF58 DS2012SF57 DS2012SF56 DS2012SF55 PDF

    noise diode

    Abstract: K51A Scans-0017953
    Contextual Info: K51A NOISE DIODE Rare gas filled noise diode for use in waveguide system s in the 10 cm wave band QUICK REFERENCE DATA Noise level above 290 °K F Ignition voltage v ign > Anode cu rren t la = max. 17. 58 dB 6000 V 300 mA HEATING: d ire c t, p ara llel supply


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    PDF

    fast thyristor 200A

    Abstract: thyristor welder F200 thyristor t 380
    Contextual Info: VSK.F200.P Series Vishay High Power Products Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAKTM Power Modules , 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode RoHS • High surge capability COMPLIANT • Electrically isolated baseplate


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    18-Jul-08 fast thyristor 200A thyristor welder F200 thyristor t 380 PDF

    E78996 G1 G2

    Abstract: vskt
    Contextual Info: VSK.F200.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3500 VRMS isolating voltage


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    E78996 2002/95/EC 18-Jul-08 E78996 G1 G2 vskt PDF

    E78996 G1 G2

    Abstract: k20s diode ba 204 thyristor code
    Contextual Info: VSK.F180.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3000 VRMS isolating voltage


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    E78996 2002/95/EC 11-Mar-11 E78996 G1 G2 k20s diode ba 204 thyristor code PDF

    VSK.F180.P

    Abstract: k20s TA7000
    Contextual Info: VSK.F180.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3000 VRMS isolating voltage


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    E78996 2002/95/EC 11-Mar-11 VSK.F180.P k20s TA7000 PDF

    300A thyristor gate control circuit

    Contextual Info: VSK.F200.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3500 VRMS isolating voltage


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    E78996 2002/95/EC 11-Mar-11 300A thyristor gate control circuit PDF

    tr 453 thyristor

    Contextual Info: VSK.F180.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3000 VRMS isolating voltage


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    E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 tr 453 thyristor PDF

    Contextual Info: VSK.F200.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3500 VRMS isolating voltage


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    E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    VSK.F180.P

    Abstract: fast thyristor module induction heating
    Contextual Info: VSK.F180.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 180 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3000 VRMS isolating voltage


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    E78996 2002/95/EC 18-Jul-08 VSK.F180.P fast thyristor module induction heating PDF

    thyristor SCR 1000A

    Abstract: fast thyristor module induction heating
    Contextual Info: VSK.F200.P Series Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor MAGN-A-PAK Power Modules , 200 A FEATURES • Fast turn-off thyristor • Fast recovery diode • High surge capability • Electrically isolated baseplate • 3500 VRMS isolating voltage


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    E78996 2002/95/EC 11-Mar-11 thyristor SCR 1000A fast thyristor module induction heating PDF

    SCR 400V 1000A

    Abstract: KF200
    Contextual Info: Bulletin I27203 09/05 IRK.F200.P SERIES MAGN-A-pak  Power Modules FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR Features Fast turn-off thyristor Fast recovery diode 200 A High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage


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    I27203 12-Mar-07 SCR 400V 1000A KF200 PDF

    Contextual Info: GEC P L E S S E Y 3 SEM ICONDUCTORS i DS4217-2.3 D S F 1 1 0 6 0 S G FAST RECOVERY DIODE APPLICATIONS • KEY PARAMETERS 6000V RRM 400A Jf AV 4200A FSM 700(iC Qr 6.0|iS v Snubber Diode For G TO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability.


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    DS4217-2 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 00A/HS 10OOA/ns, 37bfl522 DD3D17fl DSF11060SG PDF

    Contextual Info: advanced P ow er Tec h n o lo g y APT2X100D100J 1000V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES ! PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Freewheeling Diode


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    APT2X100D100J OT-227 OT-227 PDF

    diode 230

    Abstract: IR DETECTOR schottcky Silicon Detector A2S263 detector diode
    Contextual Info: A2S263 SILICON SCHOTTKY BARRIER DETECTOR DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI A2S263 is a Silicon P-Type Schottcky Barrier Zero Bias Detector Diode Housed in a Hermetically Sealed Glass Package. MAXIMUM RATINGS IC 20 mA VCE 2.5 V PDISS 100 mW @ TC = 25 C


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    A2S263 A2S263 80ISS diode 230 IR DETECTOR schottcky Silicon Detector detector diode PDF

    SUM60P05-11LT

    Abstract: SUM60P05
    Contextual Info: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) ID (A) 0.011 @ VGS = –10 V –60a 0.0175 @ VGS = –4.5 V –60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode


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    SUM60P05-11LT S-05060--Rev. 12-Nov-01 SUM60P05-11LT SUM60P05 PDF

    Contextual Info: an GEC P L E S S E Y SEPTEMBER 1996 SEMICONDUCTORS DS4175-1.2 DNB65 RECTIFIER DIODE KEY PARAMETERS VRRM 4500V ' f <a v , 2000A Ifsm 31000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.


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    DS4175-1 DNB65 1000A DNB65 DNB6544 DNB6540 DNB6538 DNB6536 D0200AD. PDF