DIODE P 600 K Search Results

Contextual Info: P 600 A.P 600 S power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 0, Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S :  ;  4

Econo PIM

Abstract: a1020 Econo SCR 600 911 DIODE Igbt 1200 1200
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 4 Overview IGBT’s 2500 V 3300 V 6500 V IHV P [kW] P. 7-8 1200 V 1600 V 1700 V IHM P. 5-6 600 V 62 mm 1200 V 1700 V P. 9-11 600 V 1200 V 1700 V 34 mm P. 9-11 1200 V 1700 V Econo PACK+

Contextual Info: WT-224DV06 Zener Diode Chips for ESD Bidrectional Protection 1. Feature: 1-1 chips, Device NO. WT-224DV06 2. Structure: 3. Size: 2-1. Planar type : N/P/N Diode. 2-2. Electrodes : Top side : Aluminum Alloy. Back side : Gold Layer. 3-1. Chip size : 24 mils x 24 mils 600 m x 600 μm .

Contextual Info: P 600 A.P 600 S 0, Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S :  ;  4  ;  ; . +.  4  ;  ; .   ;    ; ,    8   ?   3   @   A   B    #: # ' /  "  % / #:+

Contextual Info: P 600 A.P 600 S 0, Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S :  ;  4  ;  ; . +.  4  ;  ; .   ;    ; ,    8   ?   3   @   A   B    #: # ' /  "  % / #:+

SC26P

Abstract: SC12P sm 04 IPA75 sm 4500 SC19P
Contextual Info: 'Al'ACITOKS ELKCTROM« S fo r p o w er Snubber Capacitors & Modules SM series (Module for IGBT * Low-inductance & high-Q * Easy connecting eq u iva le n t circuit SM04 Type IG B T Diode rv c E S ] [V R R M ftoftrr] 600/150 600/10/0.05 Cap F] 1.5 V R /V P

60-06A

Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 600 VRRM DSEI 60 IFAVM = 60 A VRRM = 600 V = 35 ns trr C A Type TO-247 AD V 600 DSEI 60-06A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM

p600

Contextual Info: P 600 A.P 600 S -2 Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S <  ;  3  ;  ; + 0+  3  ;  ; +   ;    ; 2    5   A   1   B   C   D    #<< # ' ,  "  % , #<0

D45E60

Abstract: RR350 INFINEON D45E60 IDB45E60 IDP45E60 Q67040-S4375
Contextual Info: IDB45E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage • 175°C operating temperature

6ri30f

Abstract: Diode C 1320 6RI30G-160 R702 2RI100E 2RI60E-060 6RI100E 6RI150E-060 6RI50E-060 IMF 080
Contextual Info: DIODE M O D U LES | P f P i | Ratings and Specifications SutimtimB H 600 volts class general use diode m o d u les/E series D iivicu ly p t' V rrm V rsm lo Ifsm Ft V fm I rrm A m p s. A m p s. A 2s V o lts mA Rth j-C Package °C/W V o lts V o lts 6RI30F 060

11n60

Contextual Info: MOTOROLA Order this document by MGP11N60DE/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGP11N60DE In sulated G ate Bipolar TVansistor with A n ti-P arallel Diode IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE

Contextual Info: bSE D INTERNATIONAL RECTIFIER • MflSSMSS 0017713 322 * I N R P D -2 .3 3 5 International S Rectifier HEXFRED Provisional Data Sheet HFA30TA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per diode C h a ra c te ris tic s 600 V

avalanche photodiode ingaas ghz

Contextual Info: 30E D • bM5?S 25 002T371 2 ■ T - t y - fO S '- NEC ELECTRONICS INC PHOTO DIODE /_ N D L 5 5 0 0 P 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS

k3030

Contextual Info: K3030 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.18pì C1/C2 Min. Capacitance Ratio2.9 V(RRM)(V) Rep.Pk.Rev. Voltage31 Q Factor Min.600 f(co) Min. (Hz) Cut-off freq. P(D) Max. (W) Semiconductor Material Package StyleAxial-E Mounting StyleS

IXYS DSEI 12-06A

Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 640 VRRM DSEI 12 IFAVM = 14 A VRRM = 600 V = 35 ns trr C A Type TO-220 AC V 600 DSEI 12-06A C C A Symbol Test Conditions Maximum Ratings IFRMS IFAVM ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM

30-06A

Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 640 VRRM DSEI 30 IFAVM = 37 A VRRM = 600 V = 35 ns trr C A Type TO-247 AD V 600 DSEI 30-06A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM

T1078N

Abstract: T1258N T348N T398N T828N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 100 V 200 V 300 V 200 V 400 V 600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock

T1258N

Abstract: T348N T398N T828N T1078N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 100 V 200 V 300 V 200 V 400 V 600 V + - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock

thyristor 308

Abstract: T1078N T1258N T398N T828N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 100 V 200 V 300 V 200 V 400 V 600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock

thyristor to 582

Abstract: T1078N T1258N T398N T828N KC30 613
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 100 V 200 V 300 V 200 V 400 V 600 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl

113-118

Abstract: T1078N T1258N T398N T828N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 100 V 200 V 300 V 200 V 400 V 600 V + - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock

Contextual Info: Common Cathode Fast Recovery Epitaxial Diode FRED VRSM V 640 VRRM DSEK 30 IFAVM = 2 x 30 A VRRM = 600 V trr = 35 ns TO-247 AD Type V 600 A DSEK 30-06A C A C TAB) Symbol Test Conditions IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by T VJM

Contextual Info: a ix Y S P re lim in a ry D ata S heet IGBT with Diode IXSN 62N60U1 V CES IC25 Combi Pack ^ C E s a t = 600 V = 90 A = 2.5 V Short Circuit SOA Capability Symbol Test Conditions v CES ^ V CGR Maximum Ratings = 25 °C to 150°C 600 V T j = 25 °C to 150°C; RGE = 1 M£2

free circuit diagram welding machine

Contextual Info: QR_0630R30 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Super Fast Recovery Diode Modules 210 Amperes/600 Volts A B E G F F 2 D H 1 3 Q (2 TYP.) J (3 TYP.) K (3 TYP.) P (3 TYP.) N (2 TYP.) C Description: