DIODE P 600 K Search Results

Contextual Info: P 600 A.P 600 S power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 0, Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S :  ;  4

siemens igbt BSM 300

Abstract: Q67040-A4221-A2 BSM 214 A Q67040-A4222-A2 Q67040-A4225-A2 Q67040-A4228-A2 Q67040-A4229-A2 Q67040-A4230-A2 Q67040-A4420-A2 Q67040-A4423-A2
Contextual Info: Duo-Packs IGBT + antiparallele Diode Typ Type V BUP 400 D Duo-Packs (IGBT + antiparallel diode) A Bestellnummer Ordering Code Gehäuse Package Bild Figure 600 14.0 Q67040-A4423-A2 P-T0220-3-1 11b BUP 602 D 600 36.0 Q67040-A4229-A2 P-T0218-3-1 10b BUP 603 D

kuka

Abstract: ECONOPACK
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:33 Uhr Seite 6 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 6 Overview IGBT’s 2500 V 3300 V 6500 V IHV P [kW] P. 17 1200 V 1600 V 1700 V IHM P. 15 600 V 62 mm 1200 V 1700 V P. 10 600 V 1200 V 1700 V

Econo PIM

Abstract: a1020 Econo SCR 600 911 DIODE Igbt 1200 1200
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 4 Overview IGBT’s 2500 V 3300 V 6500 V IHV P [kW] P. 7-8 1200 V 1600 V 1700 V IHM P. 5-6 600 V 62 mm 1200 V 1700 V P. 9-11 600 V 1200 V 1700 V 34 mm P. 9-11 1200 V 1700 V Econo PACK+

Contextual Info: WT-224DV06 Zener Diode Chips for ESD Bidrectional Protection 1. Feature: 1-1 chips, Device NO. WT-224DV06 2. Structure: 3. Size: 2-1. Planar type : N/P/N Diode. 2-2. Electrodes : Top side : Aluminum Alloy. Back side : Gold Layer. 3-1. Chip size : 24 mils x 24 mils 600 m x 600 μm .

D06E60

Abstract: IDB06E60 Q67040-S4481 marking diode 6a diode 400V 6A IDP06E60 Q67040-S4480 400v 3a low vf diode smd code 6a marking DI SMD
Contextual Info: IDP06E60 IDB06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.

D09E60

Abstract: Q67040-S4482 IDB09E60 IDP09E60 Q67040-S4483
Contextual Info: IDP09E60 IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.

D15E60

Abstract: IDP15E60 IDB15E60 Q67040-S4484 Q67040-S4485
Contextual Info: IDP15E60 IDB15E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.

d45e60

Abstract: INFINEON D45E60 Q67040-S4375 IDP45E60 IDB45E60 Q67040-S4469
Contextual Info: IDP45E60 IDB45E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.

D30E60

Abstract: IDP30E60 IDB30E60 diode 30a 400v
Contextual Info: IDP30E60 IDB30E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 30 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.

D23E60

Abstract: smd diode 46A IDB23E60 IDP23E60
Contextual Info: IDP23E60 IDB23E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.

6P060AS

Abstract: D-68623 6a600
Contextual Info: DSEP6 Fast Recovery Epitaxial Diode FRED 6A 600 V IFAVM V RRM - 20 ns t Preliminary Data V rs M V rrm V Type 600 600 TO-252AA (DPAK) M arking on p ro d u ct V D S E P 6-0 6 A S Cathode 6P 060A S Cathode (Flange) Anode♦ S ym bo l C onditions U rms U rm

Contextual Info: P 600 A.P 600 S 0, Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S :  ;  4  ;  ; . +.  4  ;  ; .   ;    ; ,    8   ?   3   @   A   B    #: # ' /  "  % / #:+

Contextual Info: P 600 A.P 600 S 0, Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S :  ;  4  ;  ; . +.  4  ;  ; .   ;    ; ,    8   ?   3   @   A   B    #: # ' /  "  % / #:+

P600

Contextual Info: P 600 A.P 600 S 0, Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S :  ;  4  ;  ; . +.  4  ;  ; .   ;    ; ,    8   ?   3   @   A   B    #: # ' /  "  % / #:+

24N60CD1

Abstract: diode p1000
Contextual Info: DIXYS HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 VCES ^C25 V CE sat = 600 V = 48 A = 2.5 V P relim inary data sheet Symbol Test Conditions V „„ Tj = 25° C to 150° C 600 V 600 V Continuous ±20 V Transient ±30 V Tc = 25° C

B81 diode smd

Abstract: b81 004 IXGH20N60BU1 U 244
Contextual Info: HiPerFAST IGBT with Diode IXGH20N60BU1 IXGH20N60BU1S v CES ^C25 v CE sat typ *« = = = = 600 40 1.7 100 V A V ns P relim inary data Sym bol Test C onditions v CES v CGR T, = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 M£2 600 V Maximum Ratings

L5561

Contextual Info: PRELIMINARY DATA SHEET PHOTO DIODE MODULE N D L 5 5 6 1 P, N D L 5 5 6 1 P 1 , N D L 5 5 6 1 P 2 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 0 80 nm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5561P, NDL5561P1 and NDL5561P2 are InGaAs avalanche photo diode modules with m ultim ode fiber. They are

SC26P

Abstract: SC12P sm 04 IPA75 sm 4500 SC19P
Contextual Info: 'Al'ACITOKS ELKCTROM« S fo r p o w er Snubber Capacitors & Modules SM series (Module for IGBT * Low-inductance & high-Q * Easy connecting eq u iva le n t circuit SM04 Type IG B T Diode rv c E S ] [V R R M ftoftrr] 600/150 600/10/0.05 Cap F] 1.5 V R /V P

Contextual Info: HiPerFAST IGBT with Diode IXGH 20N60BU1 VCE sat typ 600 V 40 A 1.7 V t 100ns CES ^C25 P relim inary data Maximum Ratings Symbol Test Conditions VCES ^ = 25°C to 150°C 600 V VCGR T,J = 25°C to 150°C; RG t = 1 MQ 600 V V v GES Continuous ±20 V«„ T ransient

Contextual Info: P 600 A.P 600 S 0, Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S <  =  4  =  = . +.  4  =  = .   =    = ,    6   @   3   A   B   C    #<< # ' /  "  % / #<+

80N60AU1

Abstract: IXYS IGBT
Contextual Info: IXYS IGBT with Diode IXSN 80N60AU1 v CES ^C25 v CE sat = 600 V = 160 A = 3V oC Short Circuit SO A Capability G P relim inary data 04E Symbol Test Conditions V CES Tj - 25°C to 150°C 600 V v*C G R v GES v GEM Tj = 25CC to 150°C; RGE = 1 M ii 600 A Maximum Ratings

60-06A

Contextual Info: Fast Recovery Epitaxial Diode FRED VRSM V 600 VRRM DSEI 60 IFAVM = 60 A VRRM = 600 V = 35 ns trr C A Type TO-247 AD V 600 DSEI 60-06A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM

ixgh10n60

Abstract: 10N60AU L1229 10n60au1
Contextual Info: ^C25 V v CE sat 20 A 20 A 2.5 V 3.0 V V CES Low V_c. IGBT with Diode CE(sat) High speed IGBT with Diode 600 V IX G A /IX G H 10N60U1 IX G A /IX G H 10N60AU1 600 V Combi Packs P relim in ary data Maximum Ratings Symbol Test Conditions vt c e s Tj = 25°C to 150°C