DIODE NXP MARKING CODE N1 Search Results

NXP date code marking

Contextual Info: 006 D-2 BAP50LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits  Low diode capacitance  Low diode forward resistance

diode NXP marking code N1

Abstract: SOD882D
Contextual Info: 006 D-2 BB173LX DF N1 VHF variable capacitance diode Rev. 1 — 25 March 2013 Product data sheet 1. Product profile 1.1 General description The BB173LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.

diode NXP marking code N1

Contextual Info: 006 D-2 BB174LX DF N1 VHF variable capacitance diode Rev. 1 — 26 March 2013 Product data sheet 1. Product profile 1.1 General description The BB174LX is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD882D DFN1006D-2 ultra small leadless SMD plastic package.

NXP date code marking

Abstract: marking nxp package SOD882D a/BAP1321LX
Contextual Info: 006 D-2 BAP1321LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits       High voltage, current controlled

Contextual Info: 006 D-2 BAP142LX DF N1 Silicon PIN diode Rev. 2 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High voltage, current controlled RF resistor

NXP date code marking

Abstract: marking nxp package nxp marking code
Contextual Info: 006 D-2 BAP63LX DF N1 Silicon PIN diode Rev. 2 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High speed switching for RF signals

Contextual Info: 006 D-2 BAP65LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High voltage, current controlled

Contextual Info: 006 D-2 BAP64LX DF N1 Silicon PIN diode Rev. 4 — 16 April 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High voltage, current controlled RF resistor for RF attenuators and switches

marking nxp package

Abstract: NXP SMD diode MARKING CODE
Contextual Info: 006 D-2 BAP51LX DF N1 Silicon PIN diode Rev. 2 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High speed switching for RF signals

Contextual Info: 006 D-2 BAP64LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High voltage, current controlled RF resistor for RF attenuators and switches

Contextual Info: 006 D-2 BAP55LX DF N1 Silicon PIN diode Rev. 4 — 6 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits      High speed switching for RF signals

Contextual Info: 006 D-2 PESD5V0F1BLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 23 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device

DFN1006D-2

Abstract: diode marking code cz
Contextual Info: 006 D-2 PESD5V0F1BLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 23 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device

Contextual Info: 006 D-2 PESD5V0F1BRLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 30 January 2014 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device

Contextual Info: DF N1 01 0D -3 PMXB360ENEA 80 V, N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 60 8D -2 PMEG2020EPK 20 V, 2 A low VF MEGA Schottky barrier rectifier 10 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small

Contextual Info: DF N1 60 8D -2 PMEG4020EPK 40 V, 2 A low VF MEGA Schottky barrier rectifier 11 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small

Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 25 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

NXP date code marking

Abstract: a/NXP date code marking
Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET TRANSISTOR SMD MARKING CODE 11

Abstract: NXP SMD TRANSISTOR MARKING CODE s1
Contextual Info: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench