DIODE NXP MARKING CODE N1 Search Results
DIODE NXP MARKING CODE N1 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA |
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5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA |
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54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA |
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2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA |
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54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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DIODE NXP MARKING CODE N1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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NXP date code markingContextual Info: 006 D-2 BAP50LX DF N1 Silicon PIN diode Rev. 2 — 7 August 2013 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits Low diode capacitance Low diode forward resistance |
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BAP50LX OD882D sym006 BAP50LX DFN1006D-2 NXP date code marking | |
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Contextual Info: 006 D-2 BAP64LX DF N1 Silicon PIN diode Rev. 4 — 16 April 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882D leadless ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled RF resistor for RF attenuators and switches |
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BAP64LX OD882D sym006 | |
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Contextual Info: 006 D-2 PESD5V0F1BLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 23 July 2012 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device |
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DFN1006D-2 OD882D) | |
DFN1006D-2
Abstract: diode marking code cz
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DFN1006D-2 OD882D) DFN1006D-2 diode marking code cz | |
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Contextual Info: 006 D-2 PESD5V0F1BRLD DF N1 Femtofarad bidirectional ESD protection diode Rev. 1 — 30 January 2014 Product data sheet 1. Product profile 1.1 General description Femtofarad bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device |
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DFN1006D-2 OD882D) | |
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Contextual Info: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic |
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PMCXB900UE DFN1010B-6 OT1216) | |
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Contextual Info: DF N1 60 8D -2 PMEG2020EPK 20 V, 2 A low VF MEGA Schottky barrier rectifier 10 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small |
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PMEG2020EPK DFN1608D-2 OD1608) AEC-Q101 | |
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Contextual Info: DF N1 60 8D -2 PMEG4020EPK 40 V, 2 A low VF MEGA Schottky barrier rectifier 11 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small |
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PMEG4020EPK DFN1608D-2 OD1608) AEC-Q101 | |
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Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB75UPE DFN1010D-3 OT1215) | |
NXP date code marking
Abstract: a/NXP date code marking
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PMXB65UPE DFN1010D-3 OT1215) NXP date code marking a/NXP date code marking | |
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Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB65UPE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB75UPE DFN1010D-3 OT1215) | |
MOSFET TRANSISTOR SMD MARKING CODE 11
Abstract: NXP SMD TRANSISTOR MARKING CODE s1
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PMDXB600UNE DFN1010B-6 OT1216) MOSFET TRANSISTOR SMD MARKING CODE 11 NXP SMD TRANSISTOR MARKING CODE s1 | |
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Contextual Info: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB75UPE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 00 6D -2 PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 10 December 2013 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small |
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PMEG6002ELD OD882D DFN1006D-2) AEC-Q101 | |
nxp Standard MarkingContextual Info: DF N1 00 6D -2 PMEG6002ELD 60 V, 0.2 A low VF MEGA Schottky barrier rectifier 5 February 2014 Product data sheet 1. General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small |
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PMEG6002ELD OD882D DFN1006D-2) AEC-Q101 nxp Standard Marking | |
NXP date code markingContextual Info: DF N1 01 0D -3 PMXB43UNE 20 V, N-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB43UNE DFN1010D-3 OT1215) NXP date code marking | |
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Contextual Info: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB65UPE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB120EPE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB350UPE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB56EN DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB65ENE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB40UNE DFN1010D-3 OT1215) | |
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Contextual Info: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench |
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PMXB40UNE DFN1010D-3 OT1215) | |