DIODE N6 Search Results

TSP70

Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series

Contextual Info: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 2 US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diodes Laser Diode Module Micro Laser Module

NM635-5

Abstract: Laser module 635nm-5mW RED laser diode operating Temperature laser diode 12 pin red diode laser EPM635-5 MM635-5 N635-5 US-Lasers
Contextual Info: US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Page 1 of 2 US-Lasers: 635nm-5mW - Red Laser Diode and Red Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diodes Laser Diode Module Micro Laser Module

N645-10

Abstract: 645nm Laser Diode 10 pin
Contextual Info: n645nm 10mW Laser Diode NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N645-10 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 645nm (Typ.) Optical Power: 10mW CW Threshold Current: 50mA (Typ.)

N6555

Abstract: N655-5 655NM n655nm
Contextual Info: n655nm 5mW Laser Diode NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N655-5 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 655nm (Typ.) Optical Power: 5mW CW Threshold Current: 20mA (Typ.)

N645-20

Contextual Info: n645nm 20mW Laser Diode NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N645-20 VISIBLE LASER DIODE ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 645nm (Typ.) Optical Power: 20mW CW Threshold Current: 40mA (Typ.)

laser diode 30mw

Abstract: 655NM 30mW n655nm N655-30 655-nm
Contextual Info: n655nm 30mW Laser Diode NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N655-30 VISIBLE LASER DIODE ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 655nm (Typ.) Optical Power: 30mW CW Threshold Current: 60mA (Typ.)

N635-5

Abstract: photo diode 635nm
Contextual Info: 635nm 5mW laser diode NVG, Inc. VISIBLE LASER DIODES Technical Data MODEL # N635-5 VISIBLE LASER DIODE ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 635nm (Typ.) Optical Power: 5mW CW Threshold Current: 40mA (Typ.)

n655nm

Abstract: N655-20 Laser Diode 10 pin PO C 90
Contextual Info: n655nm 20mW Laser Diode NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N655-20 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 655nm (Typ.) Optical Power: 20mW CW Threshold Current: 40mA (Typ.)

photo diode 635nm

Abstract: laser diode 635nm 1.0mW 635nm laser diode 635nm N635-10
Contextual Info: 635nm 10mW laser diode NVG, Inc. VISIBLE LASER DIODES Technical Data MODEL # N635-10 VISIBLE LASER DIODE ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 635nm (Typ.) Optical Power: 10mW CW Threshold Current: 30mA (Typ.)

photo diode 635nm

Abstract: 635nm N635-15 635nm laser diodes
Contextual Info: 635nm 15mW Laser Diode NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N635-15 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 635nm (Typ.) Optical Power: 15mW CW Threshold Current: 50mA (Typ.)

N6551

Abstract: TO 5.6mm package N655-10 Laser Diode 10 pin
Contextual Info: n655nm 10mW Laser Diode - 5.6mm Package NVG, INC. VISIBLE LASER DIODES Technical Data MODEL # N655-10 VISIBLE DIODE LASER ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA Index Guided MQW Structure Wavelength: 655nm (Typ.) Optical Power: 10mW CW Threshold Current: 30mA (Typ.)

A114D

Abstract: AN217 DAN217C
Contextual Info: Diode arrays Diode array summary Part no. DC reverse voltage V r V Mean rectifying current l0 (mA) Reverse recovery time trr (ns) Terminal capacitance (max) CT (PF) Package type Circuit diagram Page High speed switching diode arrays FMN1 80 25 4 3.5 SMD5

Contextual Info: MOTOROLA O rder this docum ent by M G P11N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 9 0 ° C

20N60A

Abstract: D-68623 20N60U1 20N60AU
Contextual Info: Not for new designs Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

30N60AU1

Abstract: 30N60U1 IXSH30N60U1
Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR

20N60U1

Abstract: 20N60AU1 N60AU1
Contextual Info: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR

Contextual Info: MOTOROLA Order this document by MGP11N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G P11 N60ED In sulate d G ate Bipolar T ransistor w ith A n ti-P aralle l Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 11 A @ 90°C

IXGH20N60AU1

Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient

Contextual Info: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings

PUSBMxX4-TL

Contextual Info: N6 PUSBMxX4-TL series HX SO High-speed USB OTG ESD protection diode arrays Rev. 2 — 16 April 2012 Preliminary data sheet 1. Product profile 1.1 General description PUSBMxX4-TL is a series of four 4-channel ElectroStatic Discharge ESD diode arrays for USB 2.0 (On-The-Go (OTG) interfaces. The devices provide protection to

Contextual Info: ^C25 VCE sat 20 A 20 A 2.5 V 3.0 V VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10 N60AU1 600 V Combi Packs Preliminary data Symbol Test Conditions V« Td = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous

SOT1189-1

Abstract: PUSBMxX4-TL
Contextual Info: N6 PUSBMxX4-TL series HX SO High-speed USB OTG ESD protection diode arrays Rev. 3 — 14 June 2012 Product data sheet 1. Product profile 1.1 General description PUSBMxX4-TL is a series of four 4-channel ElectroStatic Discharge ESD diode arrays for USB 2.0 (On-The-Go (OTG) interfaces. The devices provide protection to

Contextual Info: N6 PUSBMxX4-TL series HX SO High-speed USB OTG ESD protection diode arrays Rev. 3 — 14 June 2012 Product data sheet 1. Product profile 1.1 General description PUSBMxX4-TL is a series of four 4-channel ElectroStatic Discharge ESD diode arrays for USB 2.0 (On-The-Go (OTG) interfaces. The devices provide protection to