DIODE MODULE 30 A Search Results

Contextual Info: DIODE MODULE DD30GB/KD30GB UL!E76102 M Power Diode Module D D 30 G B series are designed for various rectifier circuits. D D 30 G B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 800 V is

Contextual Info: DIODE MODULE DD30HB/KD30HB UL!E76102 M Power Diode Module D D 30 H B series are designed for various rectifier circuits. D D 30 H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V is

Contextual Info: DATA SHEET PHOTO DIODE NDL5131P Series 1 300 nm OPTICAL FIBER COMMUNICATIONS ^30 fim GERMANIUM AVALANCHE PHOTO DIODE MODULE WITH SMF DESCRIPTION NDL5131P Series is a Germanium avalanche photo diode module with singlemode fiber. It is designed for long wavelength transmission systems, and features small dark current and high speed response due to 30 //m detecting

PDF PIN APD DIODE DESCRIPTION

Abstract: NDL5531P NDL5531P1 NDL5531P1C NDL5531P1D NDL5531P2 NDL5531P2C NDL5531PC NDL5531PD nec 2501 m
Contextual Info: DATA SHEET PHOTO DIODE NDL5531P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ 30 µ m InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors

DF30AA140

Contextual Info: SANSHA ELECTRIC MFG CO semj T DIODE MODULE SanReX Power Diode Module D F 30 A A is designed for three phase full wave rectification, which has six diodes connected in a three phase bridge configuration. The mounting base of the module is electrically isolated from semiconductor

1625nm laser diode

Contextual Info: JOG-00313 OKI Electronics Components OL6204N-30/AP10 Rev.3 [May. 2002 ] 1625nm+/-10nm 30mW Pulsed MQW Laser Diode DIL Module with SMF. 1. DESCRIPTION OL6204N-30/AP10 is a 1625nm Laser Diode in DIL package with SMF. 2. FEATURES • · · · · Fiber output: Po=30mW

1550 laser diode

Abstract: microwave Thermistor NDL7560P NDL7560PC
Contextual Info: InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE FOR 1550 nm OTDR APPLICATION NDL7560P FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 30 mW at IFP = 400 mA, PW = 10 µs, Duty = 1% The NDL7560P is a 1550 laser diode DIP module with single mode fiber and internal thermoelectric cooler. It has a Multiple

NR8360JP-BC

Abstract: InGaAs apd photodiode C10535E C11531E NR8360JP-BC-AZ X13769X CEL avalanche photodiode ingaas ghz B3350
Contextual Info: PHOTO DIODE NR8360JP-BC φ 30 µm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and

Contextual Info: DATA SHEET PHOTO DIODE NR8360JP-BC φ 30 m InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and

diode B8

Abstract: 555D
Contextual Info: SK 30 DGDL 066 ET power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, chopper ,03 ! ! !< ,"03

HUW9823069-01B

Abstract: SLV4210-CP SLV4210-CS SLV4210-DN SLV4210-DP SLV4210-QN 1300 sumitomo
Contextual Info: Sumitomo Electric Industries, Ltd. Part No.: SLV4210 Series Document No.: HUW9823069-01B Date of issue: September 30, 1998 Technical Specification of 1.3µm MQW-DFB Laser Diode Module for CATV Return-Path Application SLV4210 Series Sumitomo Electric Industries, Ltd.

Contextual Info: VS-ENQ030L120S www.vishay.com Vishay Semiconductors EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A FEATURES • Ultrafast Trench IGBT technology • HEXFRED and silicon carbide diode technology • PressFit pins technology • Exposed Al2O3 substrate with low thermal

Contextual Info: VS-ENQ030L120S www.vishay.com Vishay Semiconductors EMIPAK-1B PressFit Power Module Neutral Point Clamp Topology, 30 A FEATURES • Ultrafast Trench IGBT technology • HEXFRED and silicon carbide diode technology • PressFit pins technology • Exposed Al2O3 substrate with low thermal

HUW9924078-01A

Abstract: PIN14
Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLT5411/SLT5413-S Series Document No. : HUW9924078-01A Date of issue : August 30, 1999 Technical Specification of CW DFB Laser Diode Module for Supervisory Channels of WDM Systems SLT5411/SLT5413-xx-S series Sumitomo Electric Industries, Ltd.

Contextual Info: Preliminary Product Specification Data Sheet Product: MicroRAM Output Ripple Attenuation Module Model Numbers: µRAM2xxx 20 Amp µRAM3xxx (30 Amp) Patents Pending Features • • • • • • • • >40dB ripple attenuation from 60Hz to 1MHz Integrated OR’ing diode supports N+1 redundancy

semikron skb 30

Contextual Info: SKB 30 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik -*:$ -: -:* . 7 ' < 5= 7 >? @/9 / ; -    ?

Contextual Info: SKD 30 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik -<:$ -: -:< . 7 ' = 5* 7 >? @/9 / ; -    D

Contextual Info: SK 30 GD 128 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT '/" '2/"  )8 $ % +, -.      

Contextual Info: SK 30 GARL 067 E power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  + (%)+ $ $> # 1 23 45      

Contextual Info: SK 30 GB 128 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT '/" '2/"  )8 $ % +, -.      

Contextual Info: SK 30 GH 067 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT *, )&*, % %> $ 2 34 56      

Contextual Info: SK 30 GB 123 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 12+ 1 2+  (: % & ./ 0#      

Contextual Info: SK 30 GB 067 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT  + (%)+ $ $> # 1 23 45      

7A610

Contextual Info: SK 30 GD 123 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 5-" 5'-" & &= $ 3 10 4!