DIODE MARKING WA Search Results

Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.

Contextual Info: <s SC311 0.5A Outline Drawing FAST RECOVERY DIODE I Marking • Surface mount device • High voltage by mesa design • High reliability I - CATHODE MARKING - SYMBOL • HC 1 14 Applications • High speed switching - MONTH

Collmer SC

Abstract: 0003B55 marking WM diode
Contextual Info: SCOI 5 1.0A <§ Outline Drawing GENERAL USE RECTIFIER DIODE • Features Marking • Surface mount device • High reliability I -I nuL MARKING -CATHODE -SYMBOL -J S Z Applications I • General purpose rectifier applications —

Contextual Info: SC016 1.0A (200V to 600V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35 ±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking Surface-mount device High reliability BB Applications Type name Abridged

Contextual Info: VBUS05L1-DD1 www.vishay.com Vishay Semiconductors Bidirectional Symmetrical BiSy Low Capacitance, Single-Line ESD-Protection Diode in LLP1006-2M FEATURES • • • • • • • 2 1 21129 20855 MARKING (example only) XY • 21121 • • • Bar = pin 1 marking

Contextual Info: SC017 1.0A (200V to 400V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking ESD-proof Surface-mount device High reliability BH Applications Type name Abridged

SC321

Abstract: SC321-2 Mark 10A 10A200V
Contextual Info: SC321 1.0A ( 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability HB Applications Code

dALLAS MARKING CODE

Abstract: fast recovery diode 600v 5A SC201 SC201-2 SC201-4 SC201-6 diode MARKING CODE GC
Contextual Info: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications

Contextual Info: SC017 1.0A (200V to 400V / 1.0A ) Outline drawings GENERAL USE RECTIFIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Marking ESD-proof Surface-mount device High reliability BH Applications Type name Abridged

diode c02

Abstract: diode c23 MBK441 All smd diode marking bb202 smd marking code C23 SOD523 marking c2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BB202 Low-voltage variable capacitance diode Product specification 2002 Feb 18 Philips Semiconductors Product specification Low-voltage variable capacitance diode FEATURES BB202 MARKING • Very steep C/V curve TYPE NUMBER

tx 01 05a

Abstract: dALLAS MARKING CODE SC311 SC311-4 SC311-6
Contextual Info: SC311 0.5A ( 400V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code HC Applications

SC802

Contextual Info: SC802-04 1A (40V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design

diode 400v 0.5a

Abstract: fast recovery diode 600v 5A SC311
Contextual Info: SC311 0.5A ( 400V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code HC Applications

diode 0.2 V 1A

Abstract: sc802
Contextual Info: SC802-06 1A (60V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design

Contextual Info: SC802-09 1A (90V / 1A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface-mount device Low VF Marking Super high speed switching High reliability by planer design

TL130

Abstract: SC371-10A 02 MARKING diode 1000V 0.5a
Contextual Info: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features 1.35 ± 0.4 Surface-mount device Low VF + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 5.1 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 Super high speed switching Marking

PMBD353

Abstract: NXP PMBD353
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD353 Schottky barrier double diode Product data sheet Supersedes data of 1999 May 25 2001 Oct 15 NXP Semiconductors Product data sheet Schottky barrier double diode FEATURES PMBD353 MARKING • Low forward voltage

ts 4141

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH VOLTAGE SWITCHING DIODE BAS521 SOD- 523 Formed SMD Package Marking:- with cathode band BAS521 – L4 High Speed and High Voltage Switching Diode ABSOLUTE MAXIMUM RATINGS

Contextual Info: 976nm Butterfly Packaged Diode Laser K98S14F-3.00W Key Features： Š 3W output power Š 105µm fiber core diameter Š 0.22NA Š 976nm wavelength Applications： Š Laser pumping Š Medical use Š Printing Š Heating Š Material processing Š Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 808nm Butterfly Packaged Diode Laser K81S14F-2.00W Key Features： Š 2W output power Š 105µm fiber core diameter Š 0.22NA Š 808nm wavelength Applications： Š Laser pumping Š Medical use Š Printing Š Heating Š Material processing Š Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON SCHOTTKY DIODE UBMS10BC 3 SOT-23 Formed SMD Package Pin Configurat ion 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE 1 2 Marking: ACS Dual Schottky Diode, in Series

marking c7 sot-23

Abstract: CMBD99 SMD c7 sot-23 marking c7 WT SOT23-3
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL GENERAL SWITCHING DIODE CMBD99 SOT-23 3 1 Pin Configuration 2 MARKING : C7 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE Silicon Epitaxial General Switching Double Diode Series.

DIODE A6

Abstract: ir diode IR switch BAS16W
Contextual Info: BAS16W Silicon Epitaxial Planar Small Signal Diode High Speed Switching Diode 3 1 2 Marking Code: A6 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM 85 V Continuous Reverse Voltage VR 75 V Continuous Forward Current (at TS = 90 OC) IF

sot143 marking code u1s

Abstract: BFP181 BGX50A E6327
Contextual Info: BGX50A. Silicon Switching Diode Array
Bridge configuration
High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter