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    DIODE MARKING S12 Search Results

    DIODE MARKING S12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy
    54121/BCA
    Rochester Electronics LLC 54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) PDF Buy
    54AC20/SDA-R
    Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) PDF Buy

    DIODE MARKING S12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    S12 MARKING CODE DIODE

    Abstract: ND102 s12 diode
    Contextual Info: ND102 Semiconductor Antenna Switching Diode Features • Low capacitance : Max.0.4pF • Low series resistance : rs= 1.0Ω Typ. @IF=10mA • UHF/VHF Band RF Switch Applications Ordering Information Type No. Marking Package Code ND102 S SOD-923 Outline Dimensions


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    ND102 OD-923 KSD-D6E006-001 S12 MARKING CODE DIODE ND102 s12 diode PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2312 N-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z DC/DC Converters z Load Switching for Portable Applications 1. GATE 2. SOURCE 3. DRAIN MARKING: S12 Maximum ratings (Ta=25℃ unless otherwise noted)


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    OT-23 CJ2312 OT-23 PDF

    s127 marking

    Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated Pin 1 G Pin 2 D Pin 3 Pin 4 D S Type Vbs b RDS on Package Marking Ordering Code BSP 318 S 60 V 2.6 A 0.15 Q SOT-223 BSP 318 S Q 67000-S127 Maximum Ratings


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    OT-223 67000-S127 s127 marking PDF

    Contextual Info: T'HTOTb Q01S0S5 S12 Ordering number: EN 2846 i SA iYO LB1731 N o.2846 Monolithic Digital IC i High-Voltage, Current-Sink Output Driver Overview The LB1731 is a 4-channel high-voltage current sink output driver. Inputs are active-low CMOS/TTL logic-level, and outputs are high-voltage open-collector NPN Darlington pairs.


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    Q01S0S5 LB1731 LB1731 16-pin DIP16F MFP30S PDF

    S12 MARKING DIODE

    Abstract: S12 MARKING CODE DIODE SOD882 BAP55L
    Contextual Info: BAP55L Silicon PIN diode Rev. 01 — 5 April 2005 Preliminary data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small plastic SMD package. 1.2 Features • High speed switching for RF signals ■ Low diode capacitance


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    BAP55L OD882 sym006 S12 MARKING DIODE S12 MARKING CODE DIODE SOD882 BAP55L PDF

    S250 DIOTEC

    Abstract: s125 marking S125
    Contextual Info: S40 . S500 S40 . S500 “Slim” Profile Surface Mount Si-Bridge-Rectifiers Si-Brückengleichrichter für die Oberflächenmontage mit „schlanker“ Bauhöhe Version 2012-11-27 0.2 1.6 ±0.1 1.5 ±0.1 Nominal current – Nennstrom 2.54 5.1+0.2 6.5 +0.2


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    O-269AA UL94V-0 50Hz-Netzperiode, S250 DIOTEC s125 marking S125 PDF

    diode Marking code v3

    Contextual Info: S1104 Unipolar Hall Switch-Low Sensitivity Features and Benefits Application Examples – – – – – – – – – – – – – – – – 3.5V to 24V Operation -40℃ to 150℃ Superior temperature operation CMOS technology Low current consumption


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    S1104 Size-SOT23 S12XX OT-23) diode Marking code v3 PDF

    CDSOD323-T05LC

    Contextual Info: T PL IA N M CO * Ro HS Features Applications • Lead free as standard* ■ HDMI 1.4 ■ ESD protection 30 kV max. ■ Digital Visual Interface DVI ■ Low capacitance ~ 1.0 pF ■ USB 3.0 / USB OTG ■ Protects 1 line ■ Memory protection ■ Uni/bidirectional configuration


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    CDSOD323-TxxLC OD323 CDSOD323-T05LC PDF

    TVS sod323

    Abstract: marking s15 diode CDSOD323
    Contextual Info: T PL IA N M CO * Ro HS Features Applications • Lead free as standard* ■ HDMI 1.4 ■ ESD protection >30 kV ■ Digital Visual Interface DVI ■ Low capacitance ~ 1.0 pF ■ USB 3.0 / USB OTG ■ Protects 1 line ■ Memory protection ■ Uni/bidirectional configuration


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    CDSOD323-TxxLC OD323 OD-323 TVS sod323 marking s15 diode CDSOD323 PDF

    CDSOD323-T05LC

    Abstract: EIA rs 481 286 CDSOD323-T15LC CDSOD323-T12LC CDSOD323-T03lc low leakage tvs diode sod323 marking s15 diode BiT05LC Transient Voltage Suppressor SOD323 CDSOD323-T24LC
    Contextual Info: T PL IA N M CO * Ro HS Features Applications • Lead free as standard* ■ HDMI 1.4 ■ ESD protection >30 kV ■ Digital Visual Interface DVI ■ Low capacitance ~ 1.0 pF ■ USB 3.0 / USB OTG ■ Protects 1 line ■ Memory protection ■ Uni/bidirectional configuration


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    CDSOD323-TxxLC OD323 RS-481-A. CDSOD323-T05LC EIA rs 481 286 CDSOD323-T15LC CDSOD323-T12LC CDSOD323-T03lc low leakage tvs diode sod323 marking s15 diode BiT05LC Transient Voltage Suppressor SOD323 CDSOD323-T24LC PDF

    CDSOD323-T05lC

    Abstract: eft protection CDSOD323-T24LC S12 MARKING CODE DIODE
    Contextual Info: NT IA PL CO M Ro HS * Features Applications • Lead free as standard* ■ HDMI 1.4 ■ ESD protection >40 kV ■ Digital Visual Interface DVI ■ Low capacitance ~ 1.0 pF ■ USB 3.0 / USB OTG ■ Protects 1 line ■ Memory protection ■ Uni/bidirectional configuration


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    CDSOD323-TxxLC OD323 RS-481-A. CDSOD323-T05lC eft protection CDSOD323-T24LC S12 MARKING CODE DIODE PDF

    CDSOD323-T05LC

    Abstract: CDSOD323-T15LC
    Contextual Info: PL IA NT CO M *R oH S Features Applications • Lead free as standard RoHS compliant* ■ HDMI 1.4 ■ ESD protection >40 kV ■ Digital Visual Interface (DVI) ■ Low capacitance ~0.6 pF ■ USB 3.0 / USB OTG ■ Protects 1 line ■ Memory protection ■ Uni/bidirectional configuration


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    CDSOD323-TxxLC OD323 OD-323 CDSOD323-T05LC CDSOD323-T15LC PDF

    JEDEC sod323

    Contextual Info: PL IA NT CO M *R oH S Features Applications • Lead free as standard RoHS compliant* ■ HDMI 1.4 ■ ESD protection >40 kV ■ Digital Visual Interface (DVI) ■ Low capacitance ~ 1.0 pF ■ USB 3.0 / USB OTG ■ Protects 1 line ■ Memory protection ■ Uni/bidirectional configuration


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    CDSOD323-TxxLC OD323 24Position OD-323 JEDEC sod323 PDF

    diode Marking code v3

    Contextual Info: S1102 Unipolar Hall Switch-Low Sensitivity Features and Benefits Application Examples – – – – – – – – – – – – – – – – 3.5V to 24V Operation -40℃ to 150℃ Superior temperature operation CMOS technology Low current consumption


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    S1102 Size-SOT23 S1102E OT-23: S12XX OT-23) diode Marking code v3 PDF

    si8812

    Abstract: si88 AGS3
    Contextual Info: New Product Si8812DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A)a 0.059 at VGS = 4.5 V 3.2 0.061 at VGS = 3.7 V 3.1 0.065 at VGS = 2.5 V 3.0 0.085 at VGS = 1.8 V 2.7 • • • • • Qg (Typ.)


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    Si8812DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8812 si88 AGS3 PDF

    S12S60SIC

    Abstract: RW marking
    Contextual Info: Schottky Barrier Diode Twin Diode • ¿m u OUTLINE S 12S 60S IC 6 0 0 V 1 2A Feature • Tj=175TC • Tj=175°C • TVF • TVF • IR = 4 0 0 y A • IR=400pA Main Use • Switching Regulator • H om e Appliance, Office Automation • S S • Communication


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    175TC 400pA S12S60SIC S12S60SIC RW marking PDF

    si88

    Abstract: si8806
    Contextual Info: New Product Si8806DB Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) () Max. ID (A)a 0.043 at VGS = 4.5 V 3.9 0.050 at VGS = 2.5 V 3.6 0.065 at VGS = 1.8 V 3.2 • • • • • Qg (Typ.) 6.5 nC MICRO FOOT Bump Side View


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    Si8806DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si88 si8806 PDF

    BBY39

    Abstract: S12 MARKING DIODE S12 MARKING CODE DIODE smd handbook
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D088 BBY39 UHF variable capacitance double diode Product specification Supersedes data of November 1993 1996 May 03 Philips Semiconductors Product specification UHF variable capacitance double diode BBY39 FEATURES


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    M3D088 BBY39 MAM169 BBY39 S12 MARKING DIODE S12 MARKING CODE DIODE smd handbook PDF

    BFP420F

    Contextual Info: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability


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    BFP420F BFP420F PDF

    Contextual Info: D IS C R E T E S E M IC O N D U C T O R S File under Discrete Semiconductors, SC01 Philips Semiconductors P H IL IP S PHILIPS Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12 FEATURES DESCRIPTION • Glass passivated


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    BAS11; BAS12 PDF

    ND102M4L

    Contextual Info: ND102M4L Semiconductor Antenna Switching Diode Array 4 in 1 Features • 4 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • ASM/FEM Module RF Switch Applications [ Dual-Band Switching Diode ]


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    ND102M4L 12PDFN KSD-D5H001-000 Rev00 ND102M4L PDF

    BAS11

    Abstract: S12 MARKING DIODE BAS12 bas12 philips
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D122 BAS11; BAS12 Controlled avalanche rectifiers Product specification Supersedes data of April 1996 1996 Sep 26 Philips Semiconductors Product specification Controlled avalanche rectifiers BAS11; BAS12


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    M3D122 BAS11; BAS12 MAM196 BAS11 S12 MARKING DIODE BAS12 bas12 philips PDF

    si5936

    Abstract: S12 MARKING CODE DIODE
    Contextual Info: New Product Si5936DU Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.030 at VGS = 10 V 6 0.040 at VGS = 4.5 V 6 PowerPAK ChipFET Dual • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®


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    Si5936DU Si5936DU-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 si5936 S12 MARKING CODE DIODE PDF