DIODE MARKING N2 Search Results

siemens siferrit N27

Abstract: Siferrit N67 UU CORE 100-turn u cores UI N27
Contextual Info: U, UI and UR Cores General Information 1 Core shapes and materials U and I cores are made of SIFERRIT materials N27, N53, N62, N67 and now new, of N82. Owing to their high saturation flux density, high Curie temperature and low dissipation losses, they are suitable for power, pulse and high-voltage transformers in particular line deflection transformers and

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR N2500N SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed 0.4 +0.1 –0.05 0.16 +0.1 –0.06 +0.1 0.65 –0.15 for DC-DC converter and 2.5 V drive switching applications.

marking ya

Abstract: N2500N-T1B-AT
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR N2500N SWITCHING N-CHANNEL MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION The N2500N is N-channel MOS Field Effect Transistor designed for DC-DC converter and 2.5 V drive switching applications. 0.16 +0.1 –0.06 +0.1

SOT1118

Abstract: PMCPB5530X NXP SMD TRANSISTOR MARKING CODE s1
Contextual Info: 020 -6 PMCPB5530X DF N2 20 V, complementary Trench MOSFET Rev. 1 — 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

Contextual Info: SANKEN ELECTRIC CO., LTD. SJPZ-N27 1. Scope The present specifications shall apply to an SJPZ-N27. 2. Outline Type Silicon Diode Structure Resin Molded Applications Over Voltage Absorption 3. Flammability UL94V-0 Equivalent 090615 1／4 SANKEN ELECTRIC CO., LTD.

9930gm

Abstract: AP9930GM DEVICE MARKING p1g marking code P1D 9930G P2d MARKING CODE n-channel so8 60v
Contextual Info: AP9930GM RoHS-compliant Product Advanced Power Electronics Corp. 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Full Bridge Application on N-CH BVDSS P2G N2D/P2D RDS ON P1S/P2S P1G N1S/N2S LCD Monitor Inverter

Contextual Info: Advanced Power Electronics Corp. AP9930AGM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S

Contextual Info: Advanced Power Electronics Corp. AP9930GM-HF-3 Quad Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement P2G N2D/P2D P1S/P2S Low On-resistance N-CH P1G Full Bridge Applications RoHS-compliant, halogen-free SO-8 N2G N1S/N2S

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

N2576XG-3

Abstract: LM2576G N2576SG sem 2005 N2576G N2576TG-3.3 1N5822 N2576 SVR 681
Contextual Info: NIKO-SEM 52 KHz 3A Step-Down Switching Voltage Regulator SVR N2576G-3.3 TO-220, TO263 Lead-Free GENERAL DESCRIPTION FEATURES The N2576G Series switching voltage regulators (SVR) are monolithic integrated circuits that provide all the active functions for a step-down (buck) switching regulator,

N2596SG-5

Abstract: nikos N2596 N2596XG N2596G N2596SG LM2596 Application LM2596 1N5822 N2596G-5
Contextual Info: 150 KHz 3A Step-Down Switching NIKO-SEM Voltage Regulator SVR -Preliminary N2596G-5 TO-220, TO263 GENERAL DESCRIPTION FEATURES The N2596 Series switching voltage regulators (SVR) are monolithic integrated circuits that provide all the active functions for a step-down (buck) switching regulator,

N2576T-5

Abstract: nikos N2576-3 SVR 681 N2576T-3.3 1N5822 LM2576 N2576 N2576S N2576S-5
Contextual Info: 52 KHz 3A Step-Down Switching Voltage Regulator SVR NIKO-SEM N2576-3.3 TO-220, TO263 GENERAL DESCRIPTION FEATURES The N2576 Series switching voltage regulators (SVR) are monolithic integrated circuits that provide all the active functions for a step-down (buck) switching regulator,

DFN2020-6

Contextual Info: 020 -6 PMDPB55XP DF N2 20 V, dual P-channel Trench MOSFET Rev. 3 — 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: 020 -6 PMDPB58UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

Contextual Info: MD -6 PMPB20EN DF N2 020 30 V N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench

NXP SMD TRANSISTOR MARKING CODE s1

Contextual Info: 020 -6 PMDPB56XN DF N2 30 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

diode smd marking code 76

Abstract: diode smd marking T2 smd diode marking 79 smd diode marking codes diode marking table smd diode marking T2 DIODE SMD CODE MARKING s7 diode marking n2 diode marking 76 marking code n2 rf
Contextual Info: 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode 1. Product profile 1.1 General description Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package. Table 1: Product overview Type number Package Configuration Philips

Contextual Info: 020 -6 PMDPB70XPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

marking code 1L

Abstract: NXP MARKING 1l
Contextual Info: 020 -6 PMDPB42UN DF N2 20 V, dual N-channel Trench MOSFET Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using

Contextual Info: 020 -6 PMDPB85UPE DF N2 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor FET in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic

N2576SG-5

Abstract: N2576TG-5 N2576SG regulator n2576tg-5 n2576g-5 N2576TG TO-263s smps isolated 12v output N2576XG-5 switching regulator 12v 3A
Contextual Info: 52 KHz 3A Step-Down Switching Voltage Regulator SVR NIKO-SEM N2576G-5 TO-220, TO263 Lead-Free GENERAL DESCRIPTION FEATURES The N2576 Series switching voltage regulators (SVR) are monolithic integrated circuits that provide all the active functions for a step-down (buck) switching regulator,

nikos

Abstract: N2576T-5 N2576-5 SVR 681 n2576s LM257 N2576 N2576T-5 equivalent N2576S-5 1N5822
Contextual Info: NIKO-SEM 52 KHz 3A Step-Down Switching Voltage Regulator SVR N2576-5 TO-220, TO263 GENERAL DESCRIPTION FEATURES The N2576 Series switching voltage regulators (SVR) are monolithic integrated circuits that provide all the active functions for a step-down (buck) switching regulator,

TRANSISTOR SMD MARKING CODE QR

Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
Contextual Info: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium

diode smd marking SOD323 5-6

Abstract: 1PS76SB17 data sheet for all smd components marking code n2 rf 1PS66SB17 1PS79SB17 SC-76 marking code 4 SC-79 DETECTOR diode SC-79
Contextual Info: 1PSxSB17 4 V, 30 mA low Cd Schottky barrier diode Rev. 06 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic package. Table 1: Product overview