DIODE MARKING GA Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR

dALLAS MARKING CODE

Abstract: fast recovery diode 600v 5A SC201 SC201-2 SC201-4 SC201-6 diode MARKING CODE GC
Contextual Info: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications

diode MARKING CODE GC

Abstract: 2SC2012 fast recovery diode 600v 5A GC marking code diode marking code GC diode SC201 SC201-2 SC201-4 SC201-6 diode marking Gc
Contextual Info: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications

Contextual Info: Data sheet 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Item No.: 281-915/281-400 2-conductor diode terminal block; with diode 1N5408 Marking Business data Supplier WAGO Supplier part no.

2SC2012

Contextual Info: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications

4060BE

Contextual Info: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications

diode marking GA

Abstract: marking GC diode 2SC2012 SC201 SC201-2 SC201-4 SC201-6
Contextual Info: SC201 0.5A • Outline Drawing f a s t r e c o v e r y DIODE I Features Marking • Surface mount device • High voltage by mesa design • High reliability -CATHODE MARKING ■SYMBOL I - Æ GA I Applications ■MONTH • High speed switching 14 - »

D1353

Abstract: marking Um diode 14-077S 330 marking diode
Contextual Info: Silicon Single Flip Chip Schottky Diode BAT 14-077S Preliminary Data Sheet • • Single Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

marking Um diode

Abstract: W-band diode diode marking um mixer diode w-band dual diode mixer 14-077D diode d.a.t.a. book marking code um
Contextual Info: Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet • • Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

MARKING SO SOT23-6 VOLTAGE

Abstract: UBMS10BC
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON SCHOTTKY DIODE UBMS10BC 3 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ 1 2 CATHODE Marking: ACS Dual Schottky Diode, in Series

BAV70U

Abstract: SC74 10325v
Contextual Info: BAV70U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diode arrays in one package 3
Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV70U A4s Pin Configuration

EHA07182

Abstract: BAV70S VPS05604 6C12 5a2 DIODE C2A26 marking 5a2
Contextual Info: BAV 70S Silicon Switching Diode Array 4 5 • For high-speed switching applications 6 • Internal galvanic isolated diode arrays in one package • Common cathode 2 3 1 VPS05604 C1/C2 A2 6 5 A1 4 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70S A4s

BAW56U

Abstract: SC74
Contextual Info: BAW56U Silicon Switching Diode Array • For high-speed switching applications 5 4 6 • Common anode • Internal galvanic isolated diode arrays 3 in one package A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW56U A1s Pin Configuration

6A1 diode

Abstract: BAW56S VPS05604
Contextual Info: BAW 56S Silicon Switching Diode Array 4 • For high-speed switching applications 5 6 • Common anode • Internal galvanic isolated diode arrays in one package A1/A2 C2 C1 6 5 4 2 3 1 VPS05604 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56S A1s

diode smd ED 17

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL GENERAL SWITCHING DIODE CMBD99 SOT-23 3 1 Pin Configuration 2 MARKING : C7 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE Silicon Epitaxial General Switching Double Diode Series.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON SCHOTTKY DIODE UBMS10BC 3 SOT-23 Formed SMD Package Pin Configurat ion 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE 1 2 Marking: ACS Dual Schottky Diode, in Series

marking c7 sot-23

Abstract: CMBD99 SMD c7 sot-23 marking c7 WT SOT23-3
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL GENERAL SWITCHING DIODE CMBD99 SOT-23 3 1 Pin Configuration 2 MARKING : C7 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE Silicon Epitaxial General Switching Double Diode Series.

Contextual Info: BAV 70U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diode arrays in one package 3
Common cathode 2 1 C1/C2 A2 A1 6 5 4 VPW09197 Di2 Di1 1 2 3 A1 A2 C1/C2 EHA07182 Type Marking BAV 70U A4s Pin Configuration

marking c7 sot-23

Abstract: transistor smd marking BA sot-23 CMBD99 SMD c7 sot-23 pe sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL GENERAL SWITCHING DIODE CMBD99 SOT-23 3 1 Pin Configuration 2 MARKING : C7 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE Silicon Epitaxial General Switching Double Diode Series.

E72873

Abstract: VUB116-16NOXT
Contextual Info: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product

6A1 diode

Contextual Info: BAW 56U Silicon Switching Diode Array
For high-speed switching applications 5 4 6
Common anode
Internal galvanic isolated diode arrays in one package 3 A1/A2 C2 C1 6 5 4 2 1 VPW09197 Di2 Di1 1 2 3 C1 C2 A1/A2 EHA07288 Type Marking BAW 56U A1s Pin Configuration

SMD diode D95

Abstract: transistor smd marking BA sot-23 BAT64
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SMALL SIGNAL SCHOTTKY DIODE BAT64 SOT-23 3 Pin Configuration MARKING:- D95 1 = ANODE 2 = NC 3 = CATHODE 1 2 DESCRIPTION General Purpose Schottky Diode Featuring Very Low Turn-on Voltage And Fast Switching.

Diode T148

Abstract: transistor 667 transistor D 667 DTA144EKA T148 marking J1
Contextual Info: FM J 1 A Transistor, digital, PNP, integral diode Features Dimensions U n its: mm • available in an SM T 5 (FMT, SC-74A) package package marking: J1 • package includes a digital PN P transistor (DTA144EKA) and a connected diode • 2.9 ± 0.2 1.9 ± 0.2

Marking A7S sot

Contextual Info: SIEMENS BAV 99S Silicon Sw itching Diode Array • For high-speed switching applications • Connected in series • Internal galvanic isolated Diodes in one package Type Marking O rdering Code Pin C onfiguration BAV 99S A7s 1/4 = A1 Q62702-A1277 Package