DIODE MARKING EY Search Results
DIODE MARKING EY Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 2910/BQA | Rochester Electronics LLC | 2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA | Rochester Electronics LLC | 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA | Rochester Electronics LLC | 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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| 9936/BCA | Rochester Electronics LLC | 9936 - Hex Inverter - Dual marked (M38510/03003BCA) |
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| 54AC86/SDA-R | Rochester Electronics LLC | 54AC86/SDA-R - Dual marked (M38510R75202SDA) |
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DIODE MARKING EY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MA411
Abstract: YG811S09R
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yg811s09rh04-004-07ma411 | |
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Contextual Info: 976nm Butterfly Packaged Diode Laser K98S14F-3.00W Key Features: 3W output power 105µm fiber core diameter 0.22NA 976nm wavelength Applications: Laser pumping Medical use Printing Heating Material processing Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by |
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976nmk98s14f-3 | |
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Contextual Info: 808nm Butterfly Packaged Diode Laser K81S14F-2.00W Key Features: 2W output power 105µm fiber core diameter 0.22NA 808nm wavelength Applications: Laser pumping Medical use Printing Heating Material processing Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by |
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808nmk81s14f-2/bwt/808nm/k81s14f | |
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Contextual Info: 976nm Butterfly Packaged Diode Laser K98S14F-2.00W Key Features: 2W output power 105µm fiber core diameter 0.22NA 976nm wavelength Applications: Laser pumping Medical use Printing Heating Material processing Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by |
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976nmk98s14f-2hw/bwt/915nm-980nm/k98s14f | |
G098PU25WContextual Info: G098PU25W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 5 W • Typical 980 nm Emission Wavelength • High Reliability • High Efficiency Applications • Medical Usage • Heating • Material Processing • Marking |
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g098pu25w | |
G098PU322WContextual Info: G098PU322W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 22 W • Typical 980 nm Emission Wavelength • High Reliability • High Efficiency Applications • Medical Usage • Heating • Material Processing • Marking |
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g098pu322w | |
G098PU312WContextual Info: G098PU312W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 12 W • Typical 980 nm Emission Wavelength • High Reliability • High Efficiency Applications • Medical Usage • Heating • Material Processing • Marking |
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g098pu312w | |
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Contextual Info: 785nm Fiber-Coupled Diode Laser K78S06F-1.60W Key Features: 1.6W output power 105µm or 200µm fiber core diameter 0.22NA 785nm wavelength Applications: Laser pumping Medical use Printing Heating Material processing Marking |
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785nmk78s06f-1 | |
1A448
Abstract: 1A448A
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1a448840nm1a448a | |
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Contextual Info: Actively Cooled Diode Laser Stack with Fast Axis Collimation, cw SPL EYxx Only available in North America Features Applications • Fast-axis collimated radiation EY-series • Modular stack of 1 cm bars actively cooled, for cw operation • Highly reliable strained layer InGa(Al)As/GaAs |
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HP6655A
Abstract: LDC-3722B ADE-608-001A laser diode 670nm 40mW HL6720G Hitachi laser diodes TOLD9453MB HL6322G hp laser printer hitachi marking format
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ade-308-007bade-408-001hade-608-001aade-508-011e+9 | |
EN81
Abstract: EY81 GWO06036 GWO06037
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gwo06037en81ey81gwo06036 | |
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Contextual Info: LX1973A Automotive Light Sensor TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION ̇ Nearly Perfect Best Eye Human Eye Spectral Response ̇ 25C Dark Current <0.005 lux ̇ 5 Decades Compressed Output ̇ 10% Accuracy Over Temperature ̇ Scalable Output Voltage |
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lx1973alux93-2570 | |
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Contextual Info: LX1973A TM Automotive Light Sensor P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Nearly Perfect Best Eye Human Eye Spectral Response 25C Dark Current <0.005 lux 5 Decades Compressed Output 10% Accuracy Over Temperature Scalable Output Voltage |
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lx1973alevels8-8121 | |
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BP 200 ir sensor
Abstract: LX1800 LX1973A LX1973AIDR LX1973AIDU MV8W00 marking BP LED analog output Ambient light sensor marking 206c LX1973AIDU-TR
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lx1973aoutp14-893-2570bp 200 ir sensorlx1800+7 | |
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Contextual Info: LX1973B Automotive Light Sensor TM P RODUCTION D ATA S HEET The LX1973B internal circuitry consists of a diode array with Microsemi’s Best Eye processing that provides a nearly perfect photopic light wavelength response curve. The sensor output feeds into a wide dynamic range |
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lx1973b | |
sld1233
Abstract: SLD1233VL advantest TR6143 DIODE 36G marking code SLD68518460 DL-3148-234 laser diode DVD Mechanical Layout 4039-01 SICK cross refeRENCE SLD67018250
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ade-308-007csld1233sld1233vladvantest tr6143+7 | |
adr 5v
Abstract: LX1800 LX1973B LX1973BIPL LX1973BIPR MV8W00 light sensor
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lx1973badr 5vlx1800lx1973bipl+3 | |
EY81
Abstract: EN81 GWOY6036 GWOY6037
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gwoy6037ey81en81gwoy6036 | |
EY81
Abstract: EN81 transistor marking code EY GWOY6036 GWOY6037
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gwoy6037ey81en81transistor marking code ey+1 | |
LCBT67S
Abstract: marking 3U 3T 3C diode N91E-AADA-35-1 IESNA RP 27 LRTB GFTG marking 3U 3T 3C diode 3E 3G LCBT67C LED 5050 WHITE CODE C CQ7P.EC-KSKU-5O8Q IEC62471
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lcbt67smarking 3u 3t 3c dioden91e-aada-35-1iesna rp 27+6 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SO D -123 S chottky B arrier Diodes M M S D 301T 1 M M S D 701T 1 T h e M M S D 3 0 1 T 1 , and M M S D 70 1T 1 devices are s p in -o ffs of our popular M M B D 3 01L T 1, and M M B D 701LT1 S O T - 2 3 devices. T h ey are designed for |
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701lt1od-123mmsd301t1mmsd701t1 | |
1794-PS3
Abstract: msr127tp 440R-N23132 MSR127RP relay 230v 8 pin 440RN23114 msr127 MSR126.1T 440R-N23135 diode k1
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iec61496280ms905nm76khz+10 | |
LX1973AIDU-TR
Abstract: J-STD-020B LX1800 LX1973 LX1973A LX1973AIDU MV8W00 light sensor automotive light light dark sensor circuit
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lx1973aoutp893-2570lx1973aidu-trj-std-020b+7 | |