DIODE MARKING CODE YF Search Results

DIODE MARKING CODE YF Equivalents

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DIODE MARKING CODE YF Result Highlights (5)

Part	Manufacturer	Description	Download
CEZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, ESC	Datasheet
CUZ8V2	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 8.2 V, USC	Datasheet
CEZ6V2	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.2 V, ESC	Datasheet
CUZ6V8	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 6.8 V, USC	Datasheet
CEZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, ESC	Datasheet

DIODE MARKING CODE YF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ERC01 Abstract: SV 04f Contextual Info: ERC01 F (i •8 A ) _ * ± ' i ' m i 3? 4 * - v : Outline Drawings GENERAL USE RECTIFIER DIODE Features • High cu rre n t • S fffitt mtkTFi : Marking High reliability ■ f f liil : Applications A7 -3 - K: È C olor code : W hite • « S 3 fc	OCR Scan	ERC01 ERC01 SV 04f	PDF
K3050 Abstract: TPCF8B01 Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 4.7 S (typ.)	Original	TPCF8B01 K3050 TPCF8B01	PDF
Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 4.7 S (typ.)	Original	TPCF8B01	PDF
TPCF8B01 Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 4.7 S (typ.)	Original	TPCF8B01 TPCF8B01	PDF
TPCF8B01 Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 4.7 S (typ.)	Original	TPCF8B01 TPCF8B01	PDF
Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	TPCF8303	PDF
cha marking code Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) High forward transfer admittance : \|Yfs\| = 7 S (typ.)	Original	TPC8303 cha marking code	PDF
Contextual Info: TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV TPC8012-H Switching Regulator Application DC-DC Converter Application Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 1.35 S (typ.)	Original	TPC8012-H	PDF
TPCF8A01 Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 5.4 S (typ.)	Original	TPCF8A01 TPCF8A01	PDF
TPCF8A01 Abstract: toshiba Silicon Rectifier Diodes Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 5.4 S (typ.)	Original	TPCF8A01 TPCF8A01 toshiba Silicon Rectifier Diodes	PDF
MCV MOSFET Abstract: TPCF8A01 Contextual Info: TPCF8A01 TOSHIBA Multi-Chip Device Silicon N Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 5.4 S (typ.)	Original	TPCF8A01 MCV MOSFET TPCF8A01	PDF
Contextual Info: TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type U-MOS III / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 4.7 S (typ.)	Original	TPCF8B01	PDF
Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : \|Yfs\| = 7 S (typ.)	Original	TPC8303	PDF
Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium-Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications z Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) z High forward transfer admittance : \|Yfs\| = 7 S (typ.)	Original	TPC8303	PDF

toshiba f5b Abstract: TPCF8303 Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	TPCF8303 toshiba f5b TPCF8303	PDF
Contextual Info: TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8103 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 4.7S (typ.)	Original	TPCF8103	PDF
Contextual Info: TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS IV TPCF8303 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 6.0 S (typ.)	Original	TPCF8303	PDF
Contextual Info: TPC8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U−MOSII TPC8303 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain−source ON resistance : RDS (ON) = 27 mΩ (typ.) High forward transfer admittance : \|Yfs\| = 7 S (typ.)	Original	TPC8303	PDF
TPC8012-H Contextual Info: TPC8012-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSV TPC8012-H Switching Regulator Applications DC／DC Converter Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.28 Ω (typ.) • High forward transfer admittance: \|Yfs\| = 1.35 S (typ.)	Original	TPC8012-H TPC8012-H	PDF
TPC6105 Contextual Info: TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPC6105 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 4.7 S (typ.)	Original	TPC6105 TPC6105	PDF
TPCF8104 Abstract: transistor SMD DK Contextual Info: TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 9.6 S (typ.)	Original	TPCF8104 TPCF8104 transistor SMD DK	PDF
TPCF8001 Contextual Info: TPCF8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPCF8001 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 8 S (typ.)	Original	TPCF8001 TPCF8001	PDF
TPCF8101 Contextual Info: TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8101 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 14 S (typ.)	Original	TPCF8101 TPCF8101	PDF
TPCF8102 Contextual Info: TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOS III TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 14 S (typ.)	Original	TPCF8102 TPCF8102	PDF

DIODE MARKING CODE YF Search Results

DIODE MARKING CODE YF Equivalents

DIODE MARKING CODE YF Result Highlights (5)

DIODE MARKING CODE YF Datasheets Context Search

ERC01

K3050

TPCF8B01

TPCF8B01

cha marking code

TPCF8A01

TPCF8A01

MCV MOSFET

toshiba f5b

TPC8012-H

TPC6105

TPCF8104

TPCF8001

TPCF8101

TPCF8102