DIODE MARKING CODE G SOT23 Search Results

Contextual Info: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery

Contextual Info: Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS 20V Features and Benefits RDS(on) ID Max (Note 5) 175mΩ @ VGS = 4.5V 1.40A @ TA = 25°C 240mΩ @ VGS = 2.5V 1.20A @ TA = 25°C 360mΩ @ VGS = 1.8V 1.0A @ TA = 25°C

MOSFET TRANSISTOR SMD MARKING CODE nh

Contextual Info: Product specification PMV160UP 20 V, 1.2 A P-channel Trench MOSFET Rev. 2 — 6 December 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

transistor smd code marking 420

Contextual Info: Product specification PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: Product specification PMV31XN N-channel TrenchMOS FET Rev. 2 — 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Contextual Info: Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: Product specification PMV28UN 20 V, 3.3 A N-channel Trench MOSFET Rev. 1 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench

TRANSISTOR SMD MARKING CODE 1 KW

Contextual Info: Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Contextual Info: Product specification PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 — 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: Product specification PMV65UN 20 V, single N-channel Trench MOSFET 13 November 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

C5440

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824021 TVS Diode Array WE-TVS SOT23-3L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 Lines - unidirectional • ESD Protection for 1 Line - bidirectional

SOT23 PAB

Contextual Info: DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) max Features • • • • • • • • • ID TA = +25°C Package -430mA 0.9Ω @ VGS = -4.5V SOT23 -20V -150mA 2.0Ω @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

WE-TVS 824011

Abstract: WE-TVS W11XY
Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824011 TVS Diode Array WE-TVS SOT23-5L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 2 high-speed I/O channels and VDD • Provide ESD protection for each channel to

Contextual Info: Product specification Philips Semiconductors BBY31 Variable capacitance diode DESCRIPTION The BBY31 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended for electronic tuning applications in thick and thin film

Contextual Info: Specification for release Customer : Ordercode: Description: Package: 824014 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features B Schematic and Pin Configuration: • ESD Protection for 4 high-speed I/O channels and VDD • Provide ESD protection for each channel to

Contextual Info: Datasheet N-Channel Enhancement Mode MOSFET Features TDM2302 Pin Description 20V/5A , RDS ON =20mΩ(typ.) @ VGS =4.5V RDS(ON) =40mΩ(typ.) @ VGS =2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)

Contextual Info: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: PJUSB05-4 SOT23-6L FEATURES Unit：inch mm • SOT23-6L package allows five separate unidirectional configurations • Low leakage < 1µA@5V 0.119(3.00) 0.110(2.80) • Breakdown voltage : 6.37V-7.04V@1mA • Low Capacitance (8.5pF typical) • ESD Protection Meeting IEC1000-4-2

marking code INFINEON

Abstract: BBY53 M 21 marking code diode BAR63-02V BBY53-02L BBY53-02V BBY53-02W BBY53-03LRH BBY53-03W BBY53-05W
Contextual Info: BBY53. Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-03LRH BBY53 BBY53-05W

marking 6AC sot23

Contextual Info: Datasheet P-Channel Enhancement Mode MOSFET Features TDM3415S Pin Description -20V/-1.5A , RDS ON =130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170mΩ(typ.) @ VGS=-2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)

7p1 marking

Abstract: marking code 7p1 ZXMP10A13F
Contextual Info: A Product Line of Diodes Incorporated ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Max RDS ON Features Package Max ID TA = +25°C Note 5 -0.7A 1.0Ω @ VGS= -10V SOT23 -100V -0.5A 1.45Ω @ VGS= -6V • • • • • • • Fast Switching Speed

BA595

Abstract: BA885 BA895 BAR63-02W BAR63-03W BCW66 SC79 SCD80
Contextual Info: BA595/BA885/BA895. Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz . 2 GHz • Especially useful as antenna switch in TV-sat tuners • Very low harmonics BA595 BA895 BA885 !