DIODE MARKING CODE 98 Search Results

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

F0D2741

Abstract: QTC 4N25 QTC 4502 MOC 4N25 F0D2711 GENERAL SEMICONDUCTOR diodes marking code rq diodo detector HCPL-2501 E90700 qtc 6n139
Contextual Info: 1655 Scott Blvd Santa Clara, CA 95050-4169 408 985-2400 FAX No. (408) 296-3256 Underwriters Laboratories Inc. File E90700 Issusd Revised Vol 11/17/1998 10/30/2001 FOLLOW-UP SERVICE PROCEDURE (TYPE R) COMPONENT Manufacturer : (621133-001) Applicant : (725625-001)

Contextual Info: P1ZAA POW-R-BRIK Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Phase Control Dual Diode Module 985 Amperes/Up to 5000 Volts C L (4 PLACES) G (3 PLACES) TAPPED HOLE X .50 DEEP E - (4 PLACES) (FOR TYP. 1/4-20 SOCKET HD. SCR.

MARKING CODE ZAA

Abstract: 5000 volt scr MIL-A-8625 marking W36
Contextual Info: P1ZAA POW-R-BRIK Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Phase Control Dual Diode Module 985 Amperes/Up to 5000 Volts C L (4 PLACES) G (3 PLACES) TAPPED HOLE X .50 DEEP E - (4 PLACES) (FOR TYP. 1/4-20 SOCKET HD. SCR.

irlml2402

Abstract: IRLML5203 irlml5203 H IRLML6302
Contextual Info: PD - 93967A PROVISIONAL IRLML5203 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier

Contextual Info: PD - 93967A PROVISIONAL IRLML5203 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier

Contextual Info: PPJA3403 30V P-Channel Enhancement Mode MOSFET Voltage -30 V SOT-23 -3.1A Current Unit: inch mm Features  RDS(ON) , VGS@-10V, ID@-3.1A<98mΩ  RDS(ON) , VGS@-4.5V, ID@-2.2A<114mΩ  RDS(ON) , VGS@-2.5V, ID@-1.1A<165mΩ  Advanced Trench Process Technology

very high current schottky diode

Abstract: pn junction diode ideality factor Waveform Clipping With Schottky 10E4 diode HSMS-2700 HSMS-2700-BLK HSMS-2700-TR1 hsms-270x J20B
Contextual Info: High Performance Schottky Diode for Digital Applications Preliminary Technical Data 2:24 PM,06/05/98 HSMS-2700/ -2702 -270B/-270C Features •Ultra-low series resistance for higher current handling Package Lead Code Identification Description The HSMS-2700 series of

Contextual Info: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2301 Pin Description -20V/-3A , RDS ON =72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V z Super High Dense Cell Design z Reliable and Rugged z Lead Free Available (RoHS Compliant) Top View of SOT23-3L

AN-994

Abstract: IRLR3303 IRLU3303
Contextual Info: 2002-03-06 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-186-98 IRLR3303 HEXFET D-Pak PD - 91316F IRLR/U3303 HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive

Contextual Info: DMN3067LW N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS 30V PRODUCT ADVANCED NEW INFORMATION ID TA = +25°C RDS(ON) 67mΩ @ VGS = 4.5V 2.6A 70mΩ @ VGS = 4.0V 2.5A 98mΩ @ VGS = 2.5V 2.2A Description This new generation MOSFET has been designed to minimize the

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

IRLML5203GPbF

Abstract: IRLML2402 IRLML2803
Contextual Info: PD - 96166 IRLML5203GPbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free Description VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V

bss138

Abstract: BSS98 siemens 350 98 Q62702-S566 Q62702-S558
Contextual Info: S I E M E N S SIPMOS " Small-Signal Transistors BSS 98 BSS 138 VDS = 50 V lD = 0 .3 /0 .2 2 A ^DS on = 3-5 O • N channel • Enhancement mode • Packages: TO-92, SOT-231) Type Marking Ordering code for version on bulk Ordering code for version in tap e2)

Contextual Info: PD - 95902 SMPS MOSFET IRFBA90N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 200V RDS on max ID 0.023Ω 98A† Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

AN1001

Abstract: IRFBA22N50A
Contextual Info: PD - 95902 SMPS MOSFET IRFBA90N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free l VDSS 200V RDS on max ID 0.023Ω 98A† Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including

TC7660

Abstract: TC7660EOA inverter pic assembly code microchip 3 phase inverter TC7660CPA TC7660EOA713 COA0221 MS-001 OA71 3 phase inverter 120 conduction mode theory
Contextual Info: M TC7660 Charge Pump DC-to-DC Voltage Converter Features Package Types • • • • • Wide Input Voltage Range: +1.5V to +10V Efficient Voltage Conversion 99.9%, typ Excellent Power Efficiency (98%, typ) Low Power Consumption: 80 µA (typ) @ VIN = 5V

IRF3205 equivalent

Abstract: irf3205 mosfet transistor irf3205 DRIVER IRF3205 IRF3205 IR driver for IRF3205 IRF3205 DATASHEET for IRF3205 transistor irf3205 irf3205 mosfet
Contextual Info: PD - 9.1279C IRF3205 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.008Ω ID = 98A Description Fifth Generation HEXFETs from International Rectifier

IRFP064N

Abstract: IRF3205 application IRFP064N equivalent irf3205 DRIVER IRF3205 IRFPE30
Contextual Info: PD 9.1383 IRFP064N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.008 Ω ID = 98A Description Fifth Generation HEXFETs from International Rectifier

IRLML5203PBF

Abstract: IRLML2402 IRLML2803 marking BS mosfet
Contextual Info: PD - 94895A IRLML5203PbF l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier

marking: F12S

Contextual Info: Preliminary Data Sheet 12126 01/98 quietIR Series International i q r Rectifier 8EWF.S SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE VF < 1.3V @ 8A V = 80ns ^RRM 1000 to 1200V Description/Features The 8EWF.S fast soft recovery QUIETIR rectifier series has been optimized for combined short

IRF3205S

Abstract: AN-994 IRF530S
Contextual Info: PD - 9.1304A IRF3205S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.008Ω ID = 98A Description