DIODE MARKING CODE 917 Search Results

Contextual Info: P D - 91742 International Iö R Rectifier IRF9Z24NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z24NS • Low-profile through-hole (IRF9Z24NL) • 175°C Operating Temperature • P-Channel • Fast Switching • Fully Avalanche Rated

Contextual Info: PD – 91746D IRF7805 HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented

10BQ040

Abstract: EIA-541 F7101 IRF7101 IRF7805
Contextual Info: PD – 91746E IRF7805 HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented

Contextual Info: PD – 91746E IRF7805 HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented

CSG3001-18A04

Abstract: thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 abb sami star SM18CXC805 sm13cxc174 CSG2001-18A04
Contextual Info: REPLACEMENT TABLE FOR THE POWER SEMICONDUCTORS OF SAMI STAR FREQUENCY CONVERTERS The replacement table gives a list of those semiconductors, which can be used in SAMI STAR frequency converters. The types given for each semiconductor are interchangeable. Detail information about the mounting of the power

Contextual Info: PD - 91749 International IQ R Rectifier IRFR/U6215 PRELIMINARY HEXFET Power MOSFET • P-Channel • 175°C Operating Temperature • Surface Mount IRFR6215 • Straight Lead (IRFU6215) • Advanced Process Technology • Fast Switching • Fully Avalanche Rated

Contextual Info: PD- 91792A IRL3215 HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.166 Ω G ID = 12A… S Description Fifth Generation HEXFETs from International Rectifier utilize advanced

IRF7324D1

Abstract: IRF7807D1 MS-012AA IC 22A Regulator
Contextual Info: PD- 91789B IRF7324D1 FETKYä MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint A A S G 1 8 K 2 7 K 3 6 4 5 D VDSS = -20V RDS on = 0.27Ω D Schottky Vf = 0.39V

Contextual Info: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7

IRF7322D1

Abstract: IRF7807D1 MS-012AA
Contextual Info: PD- 91705B IRF7322D1 FETKYä MOSFET / Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A S G 1 8 K 2 7

Contextual Info: PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = -150V RDS(on) = 0.295Ω

IRFR6215

Abstract: IRFU6215
Contextual Info: PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel l 175°C Operating Temperature l Surface Mount IRFR6215 l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = -150V RDS(on) = 0.295Ω

IRF7341

Abstract: EIA-541 F7101 IRF7101
Contextual Info: PD -91703A IRF7341 l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching HEXFET Power MOSFET S1 G1 S2 G2 Description 1 8 D1 2 7 D1 3 6 4 5 VDSS = 55V

IRFR6215

Abstract: IRFU6215
Contextual Info: 2002-03-01 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-173-28 IRFR6215 HEXFET D-Pak PD - 91749 IRFR/U6215 PRELIMINARY HEXFET Power MOSFET P-Channel l 175°C Operating Temperature

MS-012AA

Abstract: EIA-541 F7101 IRF7101 IRF7805
Contextual Info: PD- 91746D IRF7805 HEXFET Power MOSFET l l l l l l Low On-Resistance Low Gate Charge N-Channel MOSFET Ideal for mobile processor DC-DC converters Surface Mount 100% RG Tested 1 8 S 2 7 S 3 6 4 5 S G A A D VDSS = 30V D D D RDS on = 0.009Ω Top View Description

Contextual Info: PD- 91789 International IO R Rectifier PRELIMINARY IR F 7 3 2 4 D 1 FETKY MOSFET / Schottky Diode Co-packaged H EXFET Power M O SFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO -8 Footprint V d ss = -2 0 V R ü S o n = o . 1 8 £ 2

AN-994

Abstract: IRF1010EL IRF1010ES *f1010e
Contextual Info: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description

AN-994

Abstract: IRF1010EL IRF1010ES
Contextual Info: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description

Contextual Info: PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount IRF1010ES Low-profile through-hole (IRF1010EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G Description

IRF7343

Contextual Info: PD -91709A IRF7343 l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description Fifth Generation HEXFETs from International Rectifier

IRF9Z24NL

Abstract: IRF9Z24NS
Contextual Info: PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24NS l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω

IRF9Z24N

Abstract: IRF9Z24NL IRF9Z24NS
Contextual Info: PD - 91742 IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24NS l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω

IRF9Z24N

Abstract: IRF9Z24NL IRF9Z24NS
Contextual Info: PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24NS l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω

Contextual Info: PD - 91742A IRF9Z24NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9Z24NS l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω