DIODE MARKING CODE 61 Search Results

Q62702-B683

Contextual Info: BB 619C Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV/ VTR tuners Type Marking Ordering Code Pin Configuration Package BB 619C yellow S Q62702-B683 1=C SOD-123 2=A Maximum Ratings Parameter Symbol Values Diode reverse voltage

SUB610

Contextual Info: SUB610 Semiconductor Schottky Barrier Diode Features • • • • Small SMD package & 3chip array Low reverse current: IR=1 ㎂ Max. @ VR=30V Low power rectified High reliability Ordering Information Type No. Marking SUB610 61B Package Code SOT-363 Outline Dimensions

MARKING CODE S5B

Abstract: S5B SOT
Contextual Info: SIEMENS Silicon Switching Diode Array SMBD 6100 • For high-speed switching applications • Common cathode Type Marking Ordering Code tape and reel SMBD 6100 s5B Q68000-A8438 Pin Configuration Package1) 3 ° SOT-23 W I Kl 1 EHA0700* Maximum Ratings Parameter

marking code T1

Abstract: capacitance diode marking T1 BB669WS
Contextual Info: BB669WS SILICON TUNING DIODE PINNING Features • Very high capacitance ratio • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure PIN DESCRIPTION 1 Cathode 2 Anode 2 1 T1 Top View Marking Code: "T1"

SD103AW

Abstract: SD103BW SD103CW continental SOD123 103CW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS

LLP1010-5L

Abstract: pndiode 21505 diode zener ZD 260 DAP 011 diode zener ZD 150 ZD 103 ZD 103 ma d2zd
Contextual Info: VBUS054DD-HF4 Vishay Semiconductors 4-Line BUS-port ESD-protection Features • • • • • • Ultra compact LLP1010-5L package Low package height < 0.4 mm 4-line USB ESD-protection Low leakage current Low load capacitance CD = 0.8 pF ESD-protection to IEC 61000-4-2

Diode marking CODE 5M

Abstract: SOT-143 MARKING
Contextual Info: USB004 ULTRA LOW CAPACITANCE HIGH SPEED STEERING DIODE ARRAY APPLICATIONS ✔ ✔ ✔ ✔ ✔ USB Interface Ports Cellular Phones Video Hand held Electronics Personal Computers IEC COMPATIBILITY EN61000-4 SOT-143 ✔ 61000-4-2 (ESD): Air - 15kv, Contact - 8kv

IRF 244 MOSFET

Abstract: IRF 707 AN-994 EIA-541 IRFR120 IRFR3707 IRFU120 IRFU3707 U120 IRF 707 P
Contextual Info: PD - 95019A IRFR3707PbF IRFRU3707PbF SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l l HEXFET Power MOSFET VDSS RDS on max ID 30V 13mΩ 61A„ High Frequency Buck Converters for

marking CODE GA

Abstract: 83CNQ100A GA 89 40HFL40S02 83CNQ080GA 83CNQ100GA 3M LOT CODE MARKING D-61-8 case weight
Contextual Info: Preliminary Data Sheet PD-20809 09/04 83CNQ.GA 83CNQ.GASM 83CNQ.GASL 80 Amp SCHOTTKY RECTIFIER New GenIII D-61 Package IF AV = 80Amp VR = 80-100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular

VESD03A1C-02Z

Abstract: VESD03A1C-02Z-GS08
Contextual Info: VESD03A1C-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • Single-line ESD-Protection device • ESD-Immunity acc. IEC 61000-4-2 e3 > 30 kV contact discharge > 30 kV air discharge • Tiny SOD923 package • Package Height = 0.4 mm • Typ. capacitance 46 pF VR = 2.5 V; f = 1 MHz

Contextual Info: VESD05A1B-02V www.vishay.com Vishay Semiconductors Single ESD-Protection Diode in SOD-523 FEATURES • Single-line ESD-protection • Capacitance typical CD = 12 pF VR = 2.5 V, f = 1 MHz 2 1 • Leakage current IR < 1 A (VR = 5 V) 20278 • ESD-protection acc. IEC 61000-4-2

USB002

Abstract: sot543
Contextual Info: 05244 USB002 STEERING DIODE ARRAY APPLICATIONS ✔ USB Interface Ports ✔ Cellular Phones ✔ Video ✔ Handheld Electronics ✔ Personal Computers IEC COMPATIBILITY EN61000-4 ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV ✔ 61000-4-4 (EFT): 40A - 5/50ns

Contextual Info: 05140 USB004 Only One Name Means ProTek’Tion STEERING DIODE ARRAY APPLICATIONS ✔ USB Interface Ports ✔ Cellular Phones ✔ Video ✔ Handheld Electronics ✔ Personal Computers IEC COMPATIBILITY EN61000-4 ✔ 61000-4-2 (ESD): Air - 15kV, Contact - 8kV

MIXA61H1200ED

Contextual Info: MIXA 61H1200ED IGBT XPT Module H Bridge VCES = 1200 V IC25 = 85 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA 61H1200ED 13 D5 D1 1 T1 9 2 T5 10 E72873 16 14 D2 3 T2 4 D6 11 T6 12 17 Features: Application: Package: • Easy paralleling due to the positive

A 69254

Contextual Info: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

diode marking code "27C" SOT 23

Abstract: Si1473DH si1473
Contextual Info: Si1473DH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)c 0.100 at VGS = - 10 V - 2.7 0.145 at VGS = - 4.5 V - 2.7 VDS (V) - 30 Qg (Typ.) 4.1 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si1470DH

Abstract: V30VGS Si1470DH-T1-E3 15VRL
Contextual Info: Si1470DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.066 at VGS = 4.5 V 4.0a 0.095 at VGS = 2.5 V 4.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si1469DH

Abstract: Diode marking 27C Si1469DH-T1-E3 74441 si1469
Contextual Info: Si1469DH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)c 0.080 at VGS = - 10 V - 2.7 - 20 0.100 at VGS = - 4.5 V - 2.7 0.155 at VGS = - 2.5 V - 2.7 Qg (Typ.) 5.5 nC • Halogen-free According to IEC 61249-2-21

Si1403BDL-T1-E3

Abstract: Si1403BDL-T1-GE3 S10011
Contextual Info: Si1403BDL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.150 at VGS = - 4.5 V - 1.5 - 20 0.175 at VGS = - 3.6 V - 1.4 0.265 at VGS = - 2.5 V - 1.2 • Halogen-free According to IEC 61249-2-21 Definition

Si1303DL-T1-gE3

Abstract: Si1303DL
Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition

Si1905DL

Abstract: marking code QB
Contextual Info: Si1905DL Vishay Siliconix Dual P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.600 at VGS = - 4.5 V ± 0.60 0.850 at VGS = - 2.5 V ± 0.50 1.200 at VGS = - 1.8 V ± 0.42 • Halogen-free According to IEC 61249-2-21 Definition

SC-89

Abstract: Si1065X Si1065X-T1-GE3 si1065
Contextual Info: Si1065X Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.130 at VGS = - 4.5 V 1.18 0.158 at VGS = - 2.5V 1.07 0.205 at VGS = - 1.8V 0.49 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SiB433EDK

Abstract: SC-75
Contextual Info: New Product SiB433EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.058 at VGS = - 4.5 V - 9a 0.077 at VGS = - 2.5 V - 9a 0.105 at VGS = - 1.8 V -5 • Halogen-free According to IEC 61249-2-21 Definition

74285

Abstract: RG 265 si1073 SC-89
Contextual Info: Si1073X Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.173 at VGS = - 10 V - 0.98a 0.243 at VGS = - 4.5 V - 0.83 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET