DIODE MARKING CODE 421 Search Results
DIODE MARKING CODE 421 Equivalents
Sorry, but there were no results for that search. Please update your search settings or try another search term.
DIODE MARKING CODE 421 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 5446/BEA |
|
5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
|
||
| 54LS190/BEA |
|
54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
|
||
| 2910/BQA |
|
2910 - Microprogram Controller - Dual marked (7801701QA) |
|
||
| MQ80C186-12/BYA |
|
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
|
||
| 54L04/BDA |
|
54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
|
DIODE MARKING CODE 421 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
6-BTContextual Info: SIEMENS Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099 |
OCR Scan |
Q62702-A1017 OT-143 flS35bOS 6-BT | |
|
Contextual Info: SIEMENS BB 837 Silicon Tuning Diode Preliminary data • Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units • High capacitance ratio Type Marking Ordering Code Pin Configuration Package BB 837 M Q62702-B0904 1=C SOD-323 |
OCR Scan |
Q62702-B0904 OD-323 fl23Sfc Mar-27-1998 CT1/CT28 235bGS | |
mcma
Abstract: c750g MCMA265P1600KA Y1-CU weight thyristor code
|
Original |
60747and mcma c750g MCMA265P1600KA Y1-CU weight thyristor code | |
MCMA265P1600KA
Abstract: Al2O3
|
Original |
60747and MCMA265P1600KA Al2O3 | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
|
Original |
||
MOSFET IRFB 630
Abstract: IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFB41N15D IRFIB41N15D IRFS41N15D
|
Original |
93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D AN1001) O-220AB O-220 O-262 IRFB41N15D MOSFET IRFB 630 IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFIB41N15D IRFS41N15D | |
IRFB 630
Abstract: MOSFET IRFB 630 Datasheet MOSFET IRFB 630 transistor IRF 630 120V DC to DC Converter 10A TO-220 FULLPAK Package AN1001 IRF1010 IRFB41N15D IRFIB41N15D
|
Original |
93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D AN1001) O-220AB O-220 O-262 IRFB41N15D IRFB 630 MOSFET IRFB 630 Datasheet MOSFET IRFB 630 transistor IRF 630 120V DC to DC Converter 10A TO-220 FULLPAK Package AN1001 IRF1010 IRFIB41N15D | |
IRFB 630Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See |
Original |
93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D AN1001) O-220AB O-220 O-262 IRFB41N15D IRFB 630 | |
IRF3706
Abstract: IRF3706L IRF3706S IRF530S IRL3103L
|
Original |
93936C IRF3706 IRF3706S IRF3706L O-220AB O-262 O-220AB IRF3706 IRF3706L IRF3706S IRF530S IRL3103L | |
IRF3706
Abstract: IRF3706L IRF3706S IRF530S IRL3103L ED marking code diode to262 pcb footprint
|
Original |
93936C IRF3706 IRF3706S IRF3706L O-220AB O-262 AN-994. IRF3706 IRF3706L IRF3706S IRF530S IRL3103L ED marking code diode to262 pcb footprint | |
IRL3103L
Abstract: IRF9Z24S
|
Original |
PD-95989 IRF9Z24SPbF IRF9Z24LPbF IRF9Z24S/LPbF Wavef957) IRL3103L IRF9Z24S | |
IRFB41N15DPBF
Abstract: AN1001 IRF530S IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
|
Original |
IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15D IRFSL41N15D O-220AB O-220 AN1001) O-220 O-262 IRFB41N15DPBF AN1001 IRF530S IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D | |
L3103L
Abstract: l3103 AN-994 IRF3706 IRF3706L IRF3706S Marking Code YE
|
Original |
IRF3706PbF IRF3706SPbF IRF3706LPbF O-220AB IRF3706 IRF3706S O-262 IRF3706L IRF3706/S/LPbF L3103L l3103 AN-994 IRF3706 IRF3706L IRF3706S Marking Code YE | |
L3103L
Abstract: to262 pcb footprint mosfet p-channel 04 mb l3103 pulse transformer 1039 AN-994 IRF3706 IRF3706L IRF3706S mosfet marking LY
|
Original |
IRF3706PbF IRF3706SPbF IRF3706LPbF O-220AB IRF3706 IRF3706S O-262 IRF3706L IRF3706/S/LPbF L3103L to262 pcb footprint mosfet p-channel 04 mb l3103 pulse transformer 1039 AN-994 IRF3706 IRF3706L IRF3706S mosfet marking LY | |
|
|
|||
irf 44 n
Abstract: IRF Power MOSFET code marking "thermal via" PCB D2PAK IRF MOSFET driver 9936 B TO-220AB transistor package IRF1010 TO-262 MOSFET 2F 1 marking 9936
|
Original |
93936B IRF3706 IRF3706S IRF3706L O-220AB O-262 IRF3706/3706S/3706L irf 44 n IRF Power MOSFET code marking "thermal via" PCB D2PAK IRF MOSFET driver 9936 B TO-220AB transistor package IRF1010 TO-262 MOSFET 2F 1 marking 9936 | |
P-Channel MOSFET 800v
Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
|
Original |
IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L Dissi957) EIA-418. P-Channel MOSFET 800v 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode | |
|
Contextual Info: PD - 97002A IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel Benefits l Low Gate-to-Drain Charge to Reduce\ Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify |
Original |
7002A IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF AN1001) O-220AB O-262 | |
irfb52n15dpbf
Abstract: AN1001 AN-994 IRF1010 IRF530S IRL3103L
|
Original |
7002A AN1001) IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF O-220AB O-262 irfb52n15dpbf AN1001 AN-994 IRF1010 IRF530S IRL3103L | |
AN1001
Abstract: IRF530S IRL3103L IRFB
|
Original |
97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF AN1001) O-220AB O-262 IRFS38N20DPbF AN1001 IRF530S IRL3103L IRFB | |
|
Contextual Info: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive |
Original |
IRGS4620DPbF IRGB4620DPbF IRGP4620D IRGP4620DPbF O-247AC O-220AC IRGP4620D-EPbF O-247AD | |
|
Contextual Info: IRGS4630DPbF IRGB4630DPbF IRGP4630D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 30A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.65V @ IC = 18A n-channel Applications • Appliance Drives |
Original |
IRGS4630DPbF IRGB4630DPbF IRGP4630D IRGP4630DPbF O-247AC IRGP4630D-EPbF O-247AD O-220AC | |
|
Contextual Info: PD- 95593 IRL530NSPbF IRL530NLPbF Lead-Free www.irf.com 1 07/21/04 IRL530NS/LPbF 2 www.irf.com IRL530NS/LPbF www.irf.com 3 IRL530NS/LPbF 4 www.irf.com IRL530NS/LPbF www.irf.com 5 IRL530NS/LPbF 6 www.irf.com IRL530NS/LPbF Peak Diode Recovery dv/dt Test Circuit |
Original |
IRL530NSPbF IRL530NLPbF IRL530NS/LPbF EIA-418. | |
L3103L
Abstract: l3103 3103L
|
Original |
IRL530NSPbF IRL530NLPbF IRL530NS/LPbF EIA-418. L3103L l3103 3103L | |
|
Contextual Info: PD - 97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Applications l l High frequency DC-DC converters Plasma Display Panel Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify |
Original |
97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF AN1001) O-220AB O-262 IRFS38N20DPbF | |