DIODE MARKING CODE 107 Search Results

RG-107 diode

Abstract: marking BS Q67000-S078
Contextual Info: BS 107 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BS 107 200 V 0.13 A 26 Ω TO-92 BS 107 Type BS 107 Ordering Code Q67000-S078 D Tape and Reel Information

IRF3706

Abstract: IRF3706L IRF3706S IRF530S IRL3103L ED marking code diode to262 pcb footprint
Contextual Info: PD - 93936C IRF3706 IRF3706S IRF3706L SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power HEXFET Power MOSFET VDSS

KV1812K

Abstract: toko product code V toko marking code
Contextual Info: KV1812K VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ Very Small UFD Surface Mount Package Very Low Operating Voltage 1 to 8 V Large Capacitance Ratio (A = 7.4) Excellent Linearity (CV Curve) Very Small Capacitance Deviation at Tape/Reel

CV 203

Abstract: KV1847K toko Marking dual variable capacitance diode
Contextual Info: KV1847K VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ Very Small UFD Surface Mount Package Very Low Series Resistance Large Capacitance Ratio A = 1.85 minimum Excellent Linearity (CV Curve) Very Small Capacitance Deviation at Tape/Reel

D47F

Abstract: IRFH8311 PQFN footprint d020d
Contextual Info: PD - 97735C IRFH8311PbF VDS Vgs max RDS on max 30 V ± 20 V 2.1 (@VGS = 10V) (@VGS = 4.5V) 3.2 Qg typ. 30 ID 50 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET m nC i PQFN 5X6 mm A Applications •Synchronous MOSFET for high frequency buck converters

004091

Abstract: IRFZ46Z application note marking 31A AN-994 IRFZ46Z IRFZ46ZL IRFZ46ZS
Contextual Info: PD - 94769 IRFZ46Z IRFZ46ZS IRFZ46ZL AUTOMOTIVE MOSFET Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Description HEXFET Power MOSFET

7130-1 transistor

Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X
Contextual Info: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200

KV1847E

Abstract: C4 marking diode variable capacitance diode 520
Contextual Info: KV1847E VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ Very Small URD Surface Mount Package Very Low Series Resistance Large Capacitance Ratio A = 1.85 minimum Excellent Linearity (CV Curve) Very Small Capacitance Deviation at Tape/Reel

KV1812E

Contextual Info: KV1812E VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ Very Small URD Surface Mount Package Very Low Operating Voltage 1 to 8 V Large Capacitance Ratio (A = 7.4) Excellent Linearity (CV Curve) Very Small Capacitance Deviation at Tape/Reel

15n03gh

Abstract: mosfet 15N03GH 15N03 15N03GJ 15n03GH mosfet marking codes transistors SSs AP15N03GJ
Contextual Info: AP15N03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS 30V RDS ON 80mΩ ID G 15A S Description TO-252 package is widely preferred for all commercial-industrial

KV1471E

Abstract: KV1471 TOKO TAPE REEL
Contextual Info: KV1471E VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ Very Low Operating Voltage 1 to 4.5 V Excellent Linearity (CV Curve) Large Capacitance Ratio (A = 5 minimum) Very Small URD Surface Mount Package Very Small Capacitance Deviation at Tape/Reel

KV1470

Abstract: 24 marking MARKING 108 SOT23 marking code C5 sot23 marking 14 sot23-3 F7 SOT23-3 sot23 Marking f7 TOKO SOT23-3
Contextual Info: KV1470 VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ FM Radio ■ Voltage Controlled Oscillator Very Low Operating Voltage 1 to 4.5 V Excellent Linearity (CV Curve) Large Capacitance Ratio (A1 = 5.0 minimum) Two Diodes in a Miniature Package (SOT23-3)

toko 719 series

Abstract: CV 203 KV1845E toko product code
Contextual Info: KV1845E VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ UHF Communications Equipment ■ Voltage Controlled Oscillator ■ 900 MHz Communications Systems Very Small URD Surface Mount Package Very Low Series Resistance Large Capacitance Ratio A = 2.2 minimum

IRF3205S

Abstract: IRF3205 irf 146 transistor 107A equivalent irf320 AN-994 IRF3205L IRF530S
Contextual Info: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description

AN-994

Abstract: IRF3205L IRF3205S IRF530S
Contextual Info: PD - 94149A IRF3205S IRF3205L l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A… S Description

6N754

Contextual Info: Final Datasheet FDFS6N754 Integrated N-Channel PowerTrench tm MOSFET and Schottky Diode 30V, 4A, 56mΩ Features General Description „ Max rDS on = 56mΩ at VGS = 0V, ID = 4A The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very

Contextual Info: IRLML2402PbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free HEXFET Power MOSFET G 1 VDSS = 20V 3 D

IRF3205LPbF

Abstract: AN-994 IRF3205L IRL3103L
Contextual Info: PD - 95106 IRF3205SPbF IRF3205LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 8.0mΩ G ID = 110A…

DIODE smd marking 702

Abstract: diode smd marking code 421 DIODE SMD MARKING CODE 702 suppressor diode smd 5pha 5pfm 4008 SMD DIODE TV50C110K SMD MARKING CODE 529 308 smd marking
Contextual Info: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV50C110-G Thru. TV50C441-G Working Peak Reverse Voltage: 11 to 440 Volts Power Dissipation: 5000 Watts RoHS Device Features DO-214AB SMC -Glass passivated chip. -5000W peak pulse power capability with a

TH 2190 mosfet

Abstract: IRFu2307z IRFR2307Z
Contextual Info: PD - 96910 AUTOMOTIVE MOSFET IRFR2307Z IRFU2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D RDS on = 16mΩ G Description

IRFML9244

Abstract: IRLML6344 IRLML2246 irlml0030 irlml2244 IRLML2502PbF
Contextual Info: IRLML2502PbF l l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free G 1 VDSS = 20V 3 D S RDS(on) = 0.045Ω 2 Description

toko marking code

Abstract: toko 719 series toko OSCILLATOR
Contextual Info: [a TO KO KV1841E VARIABLE CAPACITANCE DIODE FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ Very Small URD Surface Mount Package Very Low Series Resistance Large Capacitance Ratio A = 2.35 Excellent Linearity (CV Curve) Very Small Capacitance Deviation at Tape/Reel

85T03GH

Abstract: 85T03 85T03GH mosfet 85t03gj 85t03g AP85T03GH marking 85T03GH mosfet 85t03gh ap85t03 AP85*03
Contextual Info: AP85T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement BVDSS 30V RDS ON 6mΩ ID ▼ Fast Switching G 75A S Description G D S The TO-252 package is widely preferred for all commercial-industrial

BAV70 SIEMENS

Contextual Info: i n - ~Î~-OZ Silicon Switching Diode Array _ 3SE D • a53b3S0 Q 01b 53 1 BAV70 T M S IP SIEMENS/ SPCL-i SENICONDS •