DIODE MARKING CODE 05M Search Results

PMEG2010EA

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 PMEG2010EA Low VF MEGA Schottky barrier diode Product specification 2002 Dec 10 Philips Semiconductors Product specification Low VF MEGA Schottky barrier diode FEATURES PMEG2010EA PINNING • Forward current: 1 A

Contextual Info: About Lab Kits General: Engineers and designers find Lab Kits convenient and economical. Each Lab Kit contains a broad range of the most popular components. Assembly: Lab Kits are available on tape and reel for automated assembly on pick-andplace m achines or in bulk bags and

SiA456DJ

Abstract: SiA456DJ-T1-GE3
Contextual Info: New Product SiA456DJ Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

si3438

Abstract: Si3438DV
Contextual Info: New Product Si3438DV Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0355 at VGS = 10 V 7.4 0.0425 at VGS = 4.5 V 6.7 • TrenchFET Power MOSFET Qg (Typ.) 5.3 nC APPLICATIONS RoHS • DC/DC Converter

si3438

Abstract: Si3438DV
Contextual Info: New Product Si3438DV Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a 0.0355 at VGS = 10 V 7.4 0.0425 at VGS = 4.5 V 6.7 • TrenchFET Power MOSFET Qg (Typ.) 5.3 nC APPLICATIONS RoHS • DC/DC Converter

SIA426DJT1GE3

Contextual Info: New Product SiA426DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0236 at VGS = 10 V 4.5 0.0263 at VGS = 4.5 V 4.5 0.0361 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: New Product SiA426DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0236 at VGS = 10 V 4.5 0.0263 at VGS = 4.5 V 4.5 0.0361 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Si1912EDH

Contextual Info: SM912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 20 •d ( A ) r D S {on) ( & ) 0.280 @ V Gs = 4.5 V 1.28 0.360 9 VGS = 2.5 V 1.13 0.450 @ VGS = 1.8 V 1.0 SOT-363 SC-70 (6-LEADS) r • TrenchFET Power MOSFETS: 1.8-V Rated

SiA426

Contextual Info: New Product SiA426DJ Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0236 at VGS = 10 V 4.5 0.0263 at VGS = 4.5 V 4.5 0.0361 at VGS = 2.5 V 4.5 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: Si5482DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.015 at VGS = 10 V 12 0.0175 at VGS = 4.5 V 12 Qg (Typ.) 16 nC PowerPAK ChipFET Single 1 D AE XXX 4 Lot Traceability and Date Code D D • Load Switch, PA Switch, and Battery Switch

Contextual Info: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET

Contextual Info: Si5480DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.016 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 Qg (Typ.) 11 nC PowerPAK ChipFET Single 2 D D 4 D G D 7 S 6 COMPLIANT • Load Switch, PA Switch, and Battery Switch

Contextual Info: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package

Contextual Info: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

Contextual Info: Si5482DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.015 at VGS = 10 V 12 0.0175 at VGS = 4.5 V 12 Qg (Typ.) 16 nC PowerPAK ChipFET Single 1 D AE XXX 4 Lot Traceability and Date Code D D • Load Switch, PA Switch, and Battery Switch

Contextual Info: Si5485DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 12a 0.042 at VGS = - 2.5 V a - 12 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package

Contextual Info: Si5484DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.016 at VGS = 4.5 V 12 VDS (V) 20 0.021 at VGS = 2.5 V • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package

s0318

Abstract: sot363 marking qs
Contextual Info: SÌ1417EDH New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V) -1 2 • TrenchFET Power MOSFETS: 1,8-V Rated • ESD Protected1 . 3000 V • Thermally Enhanced SC-70 Package I d (A ) rDS(on>(ß) 0.085 @ V GS = -4 .5 V

Contextual Info: New Product Si5418DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0145 at VGS = 10 V 12 0.0185 at VGS = 4.5 V 12 VDS (V) 30 Qg (Typ.) 9.5 nC PowerPAK ChipFET Single • Halogen-free • TrenchFET Power MOSFET

Contextual Info: Si5480DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.016 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 Qg (Typ.) 11 nC PowerPAK ChipFET Single 2 D D 4 D G D 7 S 6 COMPLIANT • Load Switch, PA Switch, and Battery Switch

Contextual Info: Si5944DU Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.112 at VGS = 10 V 6a 0.171 at VGS = 4.5 V 4.9 Qg (Typ.) 2.2 nC PowerPAK ChipFET Dual 1 CC G1 4 S2 D1 7 D1 D2 Part # Code G2 D2 6 COMPLIANT

Contextual Info: Si5419DU Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 12a 0.033 at VGS = - 4.5 V - 12a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®

sot363 marking qs

Contextual Info: SÌ1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 0.490 @ VGS = -4 .5 V -2 0 0.750 @ Vqs = "2 .5 1.10 @ VGs = -1 .B • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 3000 V • Thermally Enhanced SC-70 Package

Si1410EDH

Contextual Info: Si1410EDH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.070 @ VGS = 4.5 V 3.7 APPLICATIONS 20