DIODE MARKING B2 Search Results
DIODE MARKING B2 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE MARKING B2 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
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1n58171n8211n58181n821a+11 | |
philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
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1n8211n821a1n8231n823a+16 | |
philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
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1n58171n8211n58181n821a+11 | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1n58171n8211n58181n821a+11 | |
MARKING KE2Contextual Info: MMBZ5221BS - MMBZ5259BS 200mW SURFACE MOUNT ZENER DIODE Features SOT-363 A C1 KXX Mechanical Data • · · · · A1 Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Marking: KXX: Part marking See table page 2 |
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mmbz5221bsmmbz5259bs200mwot-363+3 | |
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Contextual Info: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number 1 2 3 Marking on Product: SFMAUI Backside: cathode Applications: Features / Advantages: |
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o-25260747and20110721a | |
IXYS DSA 12Contextual Info: DSA 15 IM 200 UC preliminary V RRM = I FAV = VF = Schottky Diode Gen ² High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 200 V 15 A 0.78 V Part number DSA 15 IM 200 UC 1 2 3 Marking on Product: SFMAUI Backside: cathode Features / Advantages: |
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o-25260747and20110721aixys dsa 12 | |
6P060ASContextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips |
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dsep6-06as6p060as6-06as60747and+1 | |
DIODE MARKING CODE B3
Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
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dsep6-06bsrecti1060747and20110915a+6 | |
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Contextual Info: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips |
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dsep6-06bs60747and20110915a | |
E72873
Abstract: VUB116-16NOXT
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116-16noxtvub116-16noxte7287320110907b | |
6P060ASContextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips |
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dsep6-06as6p060as6-06as60747and+1 | |
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Contextual Info: SDP410Q Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9 Max. • Low Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410Q B2 SOD-523 Outline Dimensions |
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sdp410qod-523ksd-e003-002 | |
diode marking b2
Abstract: SDP410D
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sdp410dod-323ksd-c003-000100mhz+1 | |
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SDP410QContextual Info: SDP410Q Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Low Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410Q B2 SOD-523 Outline Dimensions |
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sdp410qod-523ksd-e003-002 | |
SDP410DContextual Info: SDP410D Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Small Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410D B2 SOD-323 unit : mm |
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sdp410dod-323ksd-c003-000100mhz | |
DPG10I300PAContextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips |
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60747and20090323adpg10i300pa | |
SDP410Q
Abstract: diode marking b2
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sdp410qod-523ksd-e003-001100mhz+1 | |
CT-815
Abstract: marking code BB Diode variable capacitance diode 520 BB 112 transistor BB 112 Am tuning DIODE capacitance BB112 CT815
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q62702-b240ct-815marking code bb diodevariable capacitance diode 520+6 | |
03866
Abstract: 07062
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60747and20090323a0386607062 | |
400QBContextual Info: DPG 60 IM 400QB advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 45 ns 1 Part number Marking on product 2 DPG 60 IM 400QB 3 Features / Advantages: Applications: Package: ● Planar passivated chips |
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400qb60747and | |
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Contextual Info: SIEMENS BAR 63. W Silicon PIN Diode >PIN diode for high speed switching of RF signal »Low forward resistance >Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C1/C2 A1/A2 EL -0 - nr TJ nr nr Marking Ordering Code Pin Configuration |
OCR Scan |
3-04w3-05w3-06wq62702-a1261+3 | |
h2 markingContextual Info: ERB43 0.5A ( 200 to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications Maximum ratings and characteristics 種07. |
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erb43h2 marking | |
sod-323 diode MARKING CODE 4Contextual Info: PRELIMINARY DATASHEET 200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Fast Switching Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG DEVICE MARKING CODE: Device Type BAT42WS BAT43WS TA = 25°C unless otherwise noted Parameter |
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200mwod-323bat42wsbat43ws+1 | |