DIODE MARKING B2 Search Results

DIODE MARKING CODE B3

Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
Contextual Info: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number DSEP6-06BS 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Applications:

Contextual Info: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

E72873

Abstract: VUB116-16NOXT
Contextual Info: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product

diode marking b2

Abstract: SDP410D
Contextual Info: SDP410D Semiconductor Band switching Diode Features • VHF tuner band switch applications. • Low Series Resistance : rS = 0.9Ω Max. • Small Total Capacitance : CT = 1.2pF(Max.) Ordering Information Type No. Marking Package Code SDP410D B2 SOD-323 unit :

DPG10I300PA

Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

h2 marking

Contextual Info: ERB43 0.5A ( 200 to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Marking Features High voltage by mesa design Color code : Green High reliability Voltage class Applications Maximum ratings and characteristics 種07.

Contextual Info: LL4148 Small Signal Diode COLOR BAND MARKING 1ST BAND Black SOD80 2ND BAND Green The 1st Band indicates the cathode band Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VRRM IF AV if IFSM Maximum Repetitive Reverse Voltage

LL4148

Abstract: FAIRCHILD DIODE FAIRCHILD LL4148 SOD80
Contextual Info: LL4148 Small Signal Diode COLOR BAND MARKING 1ST BAND Black SOD80 2ND BAND Green The 1st Band indicates the cathode band Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VRRM IF AV if IFSM Maximum Repetitive Reverse Voltage

LL4151

Contextual Info: LL4151 SURFACE MOUNT FAST SWITCHING DIODE Features • · · Fast Switching High Reliability High Conductance C B A Mechanical Data · · · · · Case: MiniMELF, Glass Terminals: Solderable per MIL-STD-202, Method 208 Marking: Cathode Band Only Polarity: Cathode Band

sg 421

Abstract: MBRF20150CT MBRF20100CT CODE DIODE diode MARKING A1 MBRF20200CT TO-220FP MBRF20200CT diode MARKING CODE sg
Contextual Info: SEM ICON DU CTO R 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Specification Features: ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ 1 2 3 High Voltage Wide Range Selection, 100V, 150V & 200V TO-220FP DEVICE MARKING DIAGRAM High Switching Speed Device

Contextual Info: DSEP 6 Fast Recovery Epitaxial Diode FRED IFAVM = 6 A VRRM = 600 V trr = 20 ns Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA (DPAK) Cathode 6P060AS Cathode (Flange) Anode Conditions Maximum Ratings IFRMS IFAVM ①

MBRF10200CT

Abstract: MBRF10150CT mbrf10200 MBRF10100CT DIODE 0406
Contextual Info: SEM ICON DU CTO R 10A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier 1 Specification Features: ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ 2 3 TO-220FP High Voltage Wide Range Selection, 100V, 150V & 200V DEVICE MARKING DIAGRAM High Switching Speed Device

diode 4148

Abstract: 4148 diode diode do35 C 4148 B916 FDLL4148 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914

diode do35 C 4148

Abstract: diode 4448 FAIRCHILD DIODE diode f 4148 1n914b fairchild 914
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914

Contextual Info: 1^53^31 0024352 b21 B A P X Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode •■■■— mmmm BAV23S N AUER PHILIPS/DISCRETE DESCRIPTION The BAV23S consists of two planar epitaxial high-speed diodes in one microminiature plastic envelope

Contextual Info: Philips Semiconductors b b S B T B l 0 02 b2 fi4 03S W A P X Product specification BAT85 Schottky barrier diode N AMER PHILIPS/DISCRETE DESCRIPTION A Schottky barrier diode with an integrated protection ring against static discharges. This diode, in a SOD68 DO-34 envelope, is

marking code aaat

Abstract: AX057 marking aaat sg diode code marking diode marking code U6 46t marking diode MARKING CODE sg d1ns6
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE Package I AX057 D1NS6 * I 60 V 1A i ÜJ Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x S ü E • P rrsm <b2.6 »2 Rating M Main Use • Switching Regulator • D C /D c u y jt— ? Unit : mm Weight 0.19« (Typ >

smd transistor marking 329

Abstract: NXP SMD ZENER DIODE MARKING CODE PVR100AD-B12V Zener diode smd marking sot223 PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B2V5 PVR100AZ-B3V0
Contextual Info: PVR100AD-B series Voltage regulator series Rev. 01 — 31 October 2006 Product data sheet 1. Product profile 1.1 General description Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number PVR100AD-B2V5 Package

NXP SMD ZENER DIODE MARKING CODE

Abstract: PVR100AZ-B3V3 PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B12V PVR100AZ-B2V5 PVR100AZ-B3V0 PVR100AZ-B5V0
Contextual Info: PVR100AZ-B series Voltage regulator series Rev. 01 — 16 November 2006 Product data sheet 1. Product profile 1.1 General description Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number PVR100AZ-B2V5 Package

Contextual Info: New Product B2M, B4M & B6M Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers FEATURES • UL recognized, file number E54214 ~ ~ • Ideal for printed circuit boards • Applicable for automative insertion • Middle surge current capability

DIODE B6S

Abstract: B6S Bridge rectifier DIODE MARKING B4 TO-269AA diode marking b2 JESD22-B102D J-STD-002B
Contextual Info: B2S, B4S & B6S New Product Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL Recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability

marking code B4

Abstract: diode marking b2 JESD22-B102 J-STD-002 B2M marking
Contextual Info: New Product B2M, B4M & B6M Vishay General Semiconductor Miniature Glass Passivated Single-Phase Bridge Rectifiers FEATURES • UL recognized, file number E54214 ~ ~ • Ideal for printed circuit boards • Applicable for automative insertion • Middle surge current capability

Contextual Info: International Bag Rectifier HEXFET Power MOSFET • • • • • • 465S45S 001S2b2 b22 ■ INR PD-9.854 IRFIBE30G INTERNATIONAL R E C T I F I E R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating

"General Semiconductor" DO-214AC

Abstract: B260 DIODE b240 diode B220 B230 B240 B240L B260 marking b240 diode marking 406 diode -rectifier
Contextual Info: PL IA NT Features *R oH S CO M • ■ ■ ■ ■ Lead free RoHS compliant* SMA package Surface mount Very low forward voltage drop CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly