DIODE MARKING 354 Search Results

AN-994

Abstract: IRFB3507 IRFS3507 IRFSL3507
Contextual Info: PD - 96903B IRFB3507 IRFS3507 IRFSL3507 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET D VDSS RDS on typ. max.

43a 504 pcb mounted

Contextual Info: PD - 95407 AUTOMOTIVE MOSFET IRF1302SPbF IRF1302LPbF Benefits l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

IEC61000-4-4

Abstract: NBS08 SR721
Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ Applications RoHS compliant* ESD protection >40k V Protects 6 lines Low capacitance - 3 pF ■ ■ ■ ■ Ethernet ports Portable electronics Wireless LANs xDSL equipment CDNBS08-SR721 – Steering Diode Arrays

Diode Marking .004

Abstract: NBS08
Contextual Info: NT IA PL M CO S oH *R Features Applications • Lead free device RoHS compliant* ■ Ethernet ports ■ ESD protection >40 kV ■ Portable electronics ■ Protects 6 lines ■ Wireless LANs ■ Low capacitance ~5 pF ■ USB interface CDNBS08-SR112 - Steering Diode Array

nbs08

Abstract: CDNBS08-SRDA05-4 CDNBS08-SRDA12-4 CDNBS08-SRDA15-4 SRDA05-4 SRDA12-4
Contextual Info: PL IA NT Features *R oH S CO M • ■ ■ A PR ■ ■ ■ Applications Lead free as standard RoHS compliant* Protects up to 4 I/O ports Unidirectional configuration ESD protection > 40 KV Low capacitance: 15 pF ■ ■ ■ ■ Ethernet – 10/100 Base T

CDNBS08-USB3B

Abstract: nbs08 CDNBS08-USB6B
Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* Protects 2 I/O ports ESD protection > 40 KV Low capacitance: 15 pF ■ ■ ■ ■ Ethernet – 10/100 Base T Computer I/O ports – SCSI, FireWire & USB

Contextual Info: DGS 17-03CS DGSK 36-03CS VRRM = 300 V IDC = 29 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation Preliminary Data Type Marking on product DGS 17-03CS 17A30CS DGSK 36-03CS Circuit Package A Single C A TO-252 AA TO-263 AB Common cathode

Contextual Info: DGS 15-018CS DGSK 32-018CS Advanced Technical Information VRRM = 180 V IDC = 24 A CJunction = 21 pF Gallium Arsenide Schottky Rectifier Second generation Type Marking on product DGS 15-018CS 15A18CS DGSK 32-018CS Circuit Package A Single C A TO-252 AA TO-263 AB

CDNBS08-SMDA-05-6

Abstract: SMDA05-6 IEC61000-4-4 NBS08 RS423 how to test bidirectional tvs diode
Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ Applications RoHS compliant* ESD protection >25k V Protects 6 unidirectional lines Protects 5 bidirectional lines ■ ■ ■ Sensor electronics Portable electronics RS232, RS422 & RS423 data lines CDNBS08-SMDA05-6 – Standard Cap TVS Diode Arrays

MBR2045CT6

Abstract: MBR2045CT equivalent MBR20 MBR2045CT
Contextual Info: Bulletin PD-20866 rev. B 05/06 MBR20.CTPbF Series 20 Amp SCHOTTKY RECTIFIER IF AV = 20Amp VR = 35-45V Description/ Features Major Ratings and Characteristics Characteristics This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier

CDNBS08-SRDAXX-6

Abstract: CDNBS08-SRDA05-6 TVS diode Application ethernet IPA0508 NBS08 SRDA05-6 how to test tvs diode CDNBS08
Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ Applications Lead free device RoHS compliant* Protects up to 6 lines Bidirectional configuration ESD protection > 40 KV Low capacitance: 15 pF Ethernet – 10/100 Base T Computer I/O Ports – SCSI, FireWire & USB

CDNBS08-PLC03-6

Abstract: IEC61000-4-4 IPA0501 NBS08
Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ ■ Applications Lead free as standard - RoHS compliant* Telcordia GR1089 Intra-Building Protects 2 lines ESD protection > 40 KV Low Capacitance 6 pF ■ ■ ■ ■ T1/E1 & T3/E3 line cards ISDN U-Interface and S/T Interface

Contextual Info: Bulletin PD-20869 rev. A 04/06 MBR7.PbF Series SCHOTTKY RECTIFIER 7.5 Amp IF AV = 7.5Amp VR = 35-45V Major Ratings and Characteristics Characteristics IF(AV) Rectangular Description/ Features Values Units 7.5 A 35-45 V waveform VRRM The MBR7.PbF Schottky rectifier has been optimized for low

Contextual Info: FGH50T65UPD 650 V, 50 A Field Stop Trench IGBT Features • Maximum Junction Temperature : TJ = 175oC General Description • Positive Temperaure Co-efficient for Easy Parallel Operating Using innovative field stop trench IGBT technology, Fairchild’s new series of field-stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.

dgk R-PDSO-G8 land pattern

Abstract: OPA2354 OPA354 OPA354AIDDA OPA354AIDDAR OPA4354 DGK s-PDSO-G8 land pattern
Contextual Info: OPA OPA OPA354 OPA2354 OPA4354 4354 354 OPA4 354 SBOS233B – FEBRUARY 2002 – REVISED NOVEMBER 2002 250MHz, Rail-to-Rail I/O, CMOS OPERATIONAL AMPLIFIERS FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA354 series of high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other applications

smps high power

Contextual Info: DGS 20-022A DGSK 40-022A DGS 19-025AS DGS 20-025A DGSK 40-025A IDC = 18 A VRRM = 220/250 V CJunction = 26 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM Type V V 250 250 Marking on product DGS 19-025AS 19A25AS 220 250 220 250 DGS 20-022A

Contextual Info: DGS 10-022A DGSK 20-022A DGS 9-025AS DGS 10-025A DGSK 20-025A IDC = 12 A VRRM = 220/250 V CJunction = 18 pF Gallium Arsenide Schottky Rectifier Preliminary Data VRSM VRRM Type V V Marking on product 250 9A25AS A 250 DGS 9-025AS 220 250 220 250 DGS 10-022A

D-68623

Abstract: common anode diode TO-220 9A25
Contextual Info: DGS 9-025AS DGS 10-025A DGSK 20-025A IDC = 12 A VRRM = 250 V CJunction = 18 pF Gallium Arsenide Schottky Rectifier VRSM VRRM Type V V Marking on product 250 9A25AS A 250 DGS 9-025AS C Single A 250 250 250 250 DGS 10-025A DGS 10-025A DGSK 20-025A DGSK 20-025A

D-68623

Abstract: DGS3-025AS 8025A
Contextual Info: DGS 4-025A DGS 3-025AS DGSK 8-025A IFAV = 5.4 A VRRM = 250 V CJunction = 9 pF Gallium Arsenide Schottky Rectifier VRSM VRRM Type V Marking V on product A 250 250 DGS 3-025AS 3A025AS 250 250 DGS 4-025A DGS 4-025A 250 250 DGSK 8-025A DGSK 8-025A C Single A Single

IRFP460N

Abstract: AN1001 313X0
Contextual Info: PD-94098 IRFP460N SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l VDSS Rds(on) max ID 500V 0.24Ω 20A Benefits Low Gate Charge Qg results in Simple Drive Requirement

Si7884BDP-T1-E3

Abstract: Si7884BDP
Contextual Info: Si7884BDP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)f 0.0075 at VGS = 10 V 58 0.009 at VGS = 4.5 V 53 VDS (V) 40 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.) RoHS 21 nC APPLICATIONS COMPLIANT

IRF1302

Contextual Info: PD - 94591 AUTOMOTIVE MOSFET HEXFET Power MOSFET Benefits ● ● ● ● ● ● IRF1302 Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 20V

Si4164DY-T1-GE3

Abstract: si4164
Contextual Info: New Product Si4164DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 30 0.0039 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)

Contextual Info: STRH40N6 Rad-Hard N-channel 60 V, 30 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 60 V 30 A 36 mOhm 43 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID • SEE radiation hardened SMD.5 Applications