DIODE MARKING 33A ON SEMICONDUCTOR Search Results

diode marking 33a on semiconductor

Abstract: marking 33a on semiconductor
Contextual Info: FDA33N25 N-Channel UniFETTM MOSFET 250 V, 33 A, 940 m Features Description • RDS on = 880 m (Typ.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.

FDPF33N25T

Abstract: diode marking 33a on semiconductor marking 33a on semiconductor tm 1640
Contextual Info: FDPF33N25T N-Channel UniFETTM MOSFET 250 V, 33 A, 94 m Features Description • RDS on = 94 m (Max.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

zp 33a

Abstract: diode marking 33a on semiconductor 2SJ683 marking 33a on semiconductor A1057
Contextual Info: 2SJ683 Ordering number : ENA1057 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ683 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Load S/W Applicaions. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C

A1319

Abstract: ATP207 diode marking 33a on semiconductor marking 33a on semiconductor MJ-33
Contextual Info: ATP207 Ordering number : ENA1319 SANYO Semiconductors DATA SHEET ATP207 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.

Contextual Info: ATP207 Ordering number : ENA1319 SANYO Semiconductors DATA SHEET ATP207 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.

FDPF 33N25T

Abstract: 33N25T 33n25 diode marking 33a on semiconductor FDPF33N25T marking 33a on semiconductor
Contextual Info: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V

FDP33N25

Contextual Info: UniFET FDP33N25 TM 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)

diode marking 33a on semiconductor

Abstract: marking 33a on semiconductor n-channel 250V power mosfet FDB33N25 FDB33N25TM
Contextual Info: UniFET TM FDB33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)

diode marking 33a on semiconductor

Abstract: marking 33a on semiconductor FDA33N25
Contextual Info: UniFETTM FDA33N25 tm N-Channel MOSFET 250V, 33A, 0.094Ω Features Description • RDS on = 0.088Ω ( Typ.)@ VGS = 10V, ID = 16.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

diode marking 33a on semiconductor

Abstract: FDB33N25 FDB33N25TM FDI33N25 FDI33N25TU
Contextual Info: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

diode marking 33a on semiconductor

Abstract: FDI33N25TU marking 33a on semiconductor FDB33N25 FDB33N25TM FDI33N25
Contextual Info: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FQB33N10 N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

FDPF33N25

Abstract: marking 33a on semiconductor FDP33N25
Contextual Info: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V

Contextual Info: FQB33N10 / FQI33N10 N-Channel QFET MOSFET 100 V, 33 A, 52 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

K383

Abstract: diode marking 33a on semiconductor marking 33a on semiconductor sanyo 132A 2SK3836 K3836 200uH
Contextual Info: 2SK3836 Ordering number : EN8638 N-Channel Silicon MOSFET 2SK3836 General-Purpose Switching Device Applications Features • • • Ultrahigh-speed switching. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

FDPF33N25

Contextual Info: UniFET TM FDPF33N25 250V N-Channel MOSFET Features Description • 20A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)

FDB2532

Contextual Info: FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

FDP2532 Mosfet

Contextual Info: FDB2532 / FDP2532 N-Channel UltraFET Trench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 86nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

FDB2532

Abstract: IS10E nl109 RG101 DIODE N7 33a
Contextual Info: FDB2532_F085 N-Channel PowerTrench MOSFET 150V, 79A, 16mΩ Features Applications • r DS ON = 14mΩ (Typ.), VGS = 10V, ID = 33A • DC/DC converters and Off-Line UPS • Qg(tot) = 82nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

Contextual Info: RCX330N25 Nch 250V 33A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 105mW ID 33A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

FDP2532

Abstract: FDP2532 Mosfet
Contextual Info: FDP2532 / FDB2532 N-Channel PowerTrench MOSFET 150 V, 79 A, 16 mΩ Features Applications • RDS on = 14 mΩ ( Typ.) @ VGS = 10 V, ID = 33 A • Consumer Appliances • QG(tot) = 82 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge

rcj330

Contextual Info: RCJ330N25 Nch 250V 33A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 105mW ID 33A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

marking 66a

Abstract: FDB66N15
Contextual Info: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)

FDD8586

Abstract: FDU8586
Contextual Info: FDD8586/FDU8586 N-Channel PowerTrench MOSFET 20V, 35A, 5.5mΩ Features tm General Description „ Max rDS on = 5.5mΩ at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using