DIODE MARKING 33A ON Search Results

PQFN footprint

Abstract: diode marking 33a on semiconductor IRFH5210TR2PBF marking 33a on semiconductor AN-1154 IRFH5210TRPBF IRFH5210
Contextual Info: PD - 97490 IRFH5210PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 100 V 14.9 mΩ Qg (typical) RG (typical) 39 nC 1.8 Ω ID 55 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

IRFP250 equivalent

Abstract: 035H 30ETH06 IRFP250 IRFPE30 IRGP50B60PD1 irgp50B60
Contextual Info: PD - 94625 IRGP50B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

D47F

Abstract: IRFH5210
Contextual Info: PD - 97490A IRFH5210PbF HEXFET Power MOSFET VDS 100 V RDS on max 14.9 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 55 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: IRFH5210PbF HEXFET Power MOSFET VDS 100 V RDS on max 14.9 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 55 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications

Contextual Info: IRFR3710Z IRFU3710Z Features l l l l l D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 100V RDS on = 18mΩ G ID = 42A S Description Specifically designed for Automotive applications, thi

U3710

Abstract: IRFR3710Z IRFU3710Z
Contextual Info: PD - 94740 IRFR3710Z IRFU3710Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 18mΩ

200V 200A mosfet

Abstract: IRGP50B60PD1PBF 200A 600V FET diode marking 33A 30ETH06 MOSFET Parameters 33a marking
Contextual Info: SMPS IGBT PD - 95330A IRGP50B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

50b60pd

Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
Contextual Info: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET

U3710

Abstract: IRFR3710Z IRFU3710Z IRFR3710
Contextual Info: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

A6T Diode

Abstract: diode A6t Diode GP 641 a6t gd IRFR3710ZPBF a6t 69 marking a6t IRFU3710Z
Contextual Info: PD - 95513C AUTOMOTIVE MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Multiple Package Options Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF

FDPF 33N25T

Abstract: 33N25T 33n25 diode marking 33a on semiconductor FDPF33N25T marking 33a on semiconductor
Contextual Info: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V

50B60PD1

Abstract: P50B60 p50b60pd1
Contextual Info: AUIRGP50B60PD1 AUIRGP50B60PD1-E AUTOMOTIVE GRADE WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET Parameters

FDP33N25

Contextual Info: UniFET FDP33N25 TM 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)

mosfet 10a 600v

Abstract: td 1410 IRGP50B60PD 600V 25A Ultrafast Diode irfp250 DRIVER P channel 50A IGBT 30ETH06 IRFP250 50AIF
Contextual Info: PD - 94624B IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

IRFR3710Z

Abstract: IRFU3710Z
Contextual Info: PD - 94740A IRFR3710Z IRFU3710Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 100V RDS on = 18mΩ

diode marking 33a on semiconductor

Abstract: marking 33a on semiconductor FDA33N25
Contextual Info: UniFETTM FDA33N25 tm N-Channel MOSFET 250V, 33A, 0.094Ω Features Description • RDS on = 0.088Ω ( Typ.)@ VGS = 10V, ID = 16.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

diode marking 33a on semiconductor

Abstract: FDB33N25 FDB33N25TM FDI33N25 FDI33N25TU
Contextual Info: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

IRGP50B60PDPBF

Abstract: 035H 30ETH06 IRFP250 IRFPE30 210uH
Contextual Info: PD - 95968 IRGP50B60PDPbF SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

IRGP50B60PD1

Abstract: irfp250 DRIVER smps igbt transistor IRF 630 035H 30ETH06 IRFP250 IRFPE30 IRGP50B60PD
Contextual Info: PD - 94625B IRGP50B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

AN-994

Abstract: EIA-541 IRFR120 IRFR3710Z IRFU120 IRFU3710Z
Contextual Info: PD - 95513A IRFR3710ZPbF IRFU3710ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 100V

70t03g

Abstract: 70t03 70T03GI diode marking 33a on semiconductor marking 33a on semiconductor
Contextual Info: AP70T03GI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Fast Switching Performance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Single Drive Requirement ▼ Full Isolation Package BVDSS 30V RDS ON 9mΩ ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with

70t03gh

Abstract: 70t03gh mosfet 70T03GJ 70t03 SSM70T03GH 70t03g 60V 60A TO-252 N-CHANNEL SSM70T03 ssm70t0 TO-251 footprint
Contextual Info: SSM70T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 30V R DS ON 9mΩ ID 60A DESCRIPTION The SSM70T03 acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC

AUFR3710Z

Abstract: AUIRFR3710Z AUIRFr3710 diode marking 33a on semiconductor MJ200
Contextual Info: PD - 97451 AUTOMOTIVE GRADE HEXFET Power MOSFET Features l l l l l l l AUIRFR3710Z Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

FDPF33N25

Contextual Info: UniFET TM FDPF33N25 250V N-Channel MOSFET Features Description • 20A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)