DIODE MARKING 33A Search Results

code marking AFAA

Abstract: AFAA
Contextual Info: PD - 94625A IRGP50B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

IRFP250 equivalent

Abstract: 035H 30ETH06 IRFP250 IRFPE30 IRGP50B60PD1 irgp50B60
Contextual Info: PD - 94625 IRGP50B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

FDPF 33N25T

Abstract: 33N25T 33n25 diode marking 33a on semiconductor FDPF33N25T marking 33a on semiconductor
Contextual Info: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V

Contextual Info: PD- 93893 PROVISIONAL IRFB33N15D IRFS33N15D IRFSL33N15D SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS on max ID 150V 0.056Ω 33A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

diode marking 33a on semiconductor

Abstract: marking 33a on semiconductor n-channel 250V power mosfet FDB33N25 FDB33N25TM
Contextual Info: UniFET TM FDB33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)

irf 940

Contextual Info: PD - 95070 IRFR/U3303PbF l l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S

IRF540N

Abstract: IRFP140N
Contextual Info: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier

FDP33N25

Contextual Info: UniFET FDP33N25 TM 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 36.8 nC)

Contextual Info: IRFR/U3303 D l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S D -P a k T O -2 52 A A I-P a k TO -2 5 1 A A Description

diode marking 33a on semiconductor

Abstract: marking 33a on semiconductor FDA33N25
Contextual Info: UniFETTM FDA33N25 tm N-Channel MOSFET 250V, 33A, 0.094Ω Features Description • RDS on = 0.088Ω ( Typ.)@ VGS = 10V, ID = 16.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description

U3303

Abstract: AN-994 IRFR3303 *fr3303
Contextual Info: PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description

U3303

Abstract: AN-994 IRFR3303 9164 fu120
Contextual Info: PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description

IRF540N

Abstract: mosfet irf540n
Contextual Info: PD - 91341A IRF540N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier

diode marking 33a on semiconductor

Abstract: FDB33N25 FDB33N25TM FDI33N25 FDI33N25TU
Contextual Info: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

diode marking 33a on semiconductor

Abstract: FDI33N25TU marking 33a on semiconductor FDB33N25 FDB33N25TM FDI33N25
Contextual Info: UniFET TM FDB33N25 / FDI33N25 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDPF33N25

Abstract: marking 33a on semiconductor FDP33N25
Contextual Info: UniFET TM FDP33N25 / FDPF33N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V

200V 200A mosfet

Abstract: IRGP50B60PD1PBF 200A 600V FET diode marking 33A 30ETH06 MOSFET Parameters 33a marking
Contextual Info: SMPS IGBT PD - 95330A IRGP50B60PD1PbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies

fdpf33n25t

Abstract: diode marking 33a on semiconductor marking 33a on semiconductor
Contextual Info: TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V

FDPF33N25T

Contextual Info: TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description • 33A, 250V, RDS on = 0.094Ω @VGS = 10 V • Low gate charge ( typical 36.8 nC) • Low Crss ( typical 39 pF) • Fast switching • Improved dv/dt capability These N-Channel enhancement mode power field effect

FDPF33N25T

Abstract: diode marking 33a on semiconductor marking 33a on semiconductor FDP33N25
Contextual Info: TM UniFET FDP33N25 / FDPF33N25T 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 33A, 250V, RDS on = 0.094Ω @VGS = 10 V

50b60pd

Abstract: 50B60PD1 50B60PD1E AUIRGP50B60 AUIRGP50B60PD1 p50b60pd1 50b60 AUIRGP50B60PD1E 200V AUTOMOTIVE MOSFET irfp250 DRIVER
Contextual Info: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET

50B60PD1

Abstract: P50B60 p50b60pd1
Contextual Info: AUIRGP50B60PD1 AUIRGP50B60PD1-E AUTOMOTIVE GRADE WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET Parameters

Contextual Info: PD - 96306A AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET