DIODE MARKING 30J Search Results

30jl2c

Contextual Info: 30JL2C41 TOSHIBA TOSHIBA HIGH EFFICIENCY DIODE STACK HED 3fl I I IC SILICON EPITAXIAL TYPE 4 1 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 15.9 MAX. • • • 2 + 0.2 Vrrm = 600V Repetitive Peak Reverse Voltage Average Output Recifled Current

30JL2C41

Abstract: toshiba diode 1A 30jl2c
Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION Repetitive Peak Reverse Voltage : VRRM = 600V Average Output Rectified Current : IO = 30A Ultra Fast Reverse-Recovery Time

Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION l Repetitive Peak Reverse Voltage : VRRM = 600V l Average Output Rectified Current : IO = 30A

Contextual Info: T O SH IB A 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING TYPE PO W ER SUPPLY APPLICATION U nit in mm CONVERTER & CHOPPER APPLICATION 15.9 M A X. • Repetitive Peak Reverse Voltage V r r m = 600V • A verage Output Recified Current

kone

Abstract: 30JL2C41 OT63
Contextual Info: TOSHIBA 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 15.9 M A X. V r r m = 600V • Repetitive Peak Reverse Voltage IO = 30A • Average Output Reeified Current

Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION Average Output Rectified Current : VRRM = 600 V : IO = 30 A Ultra Fast Reverse-Recovery Time

30JL2C

Abstract: toshiba a10 30JL2C41
Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION ! Repetitive Peak Reverse Voltage : VRRM = 600 V ! Average Output Rectified Current : IO = 30 A

Contextual Info: T O SH IB A 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE B0JL2C41 Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION SYMBOL Vr r m io If SM Tj Tstg RATING 600 30 150 (50Hz) 165 (60Hz) -4 0 -1 5 0

Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION z Average Output Rectified Current : VRRM = 600 V : IO = 30 A z Ultra Fast Reverse-Recovery Time

zener smd marking GA

Abstract: S6 SMD zener diode Zener diode smd marking 07 5DL2CZ smd schottky diode s6 CMS11 CMS19 CMG03 marking h01 rf semiconductors
Contextual Info: 2008-8 PRODUCT GUIDE Small and Medium Diodes s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1. Diode Product Tree 3 2. Key Features 4 3. New Small & Medium Diodes 5 4. Selection Guide 6 5. Symbols, Terms and Definitions

30JL2C41

Contextual Info: 30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 30JL2C41 Unit: mm SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 30 A

Contextual Info: r n m COPYRIGHT ALL RIGHTS RESERVED. BT TCP CONNECTOR LID MECHANICAL: F KSCRPIBN Nm Am JC KZ 23APR2013 LOGO CHANGE NOTES: M A T ER IA LS: HOUSING - TH ERM O PLA STIC PET P O L Y E S T E R FL A M M A B IL IT Y RATING UL 9 t V -0 . SHIELD - .010" THICK, C26800 B R A S S P R E P L A T E D WITH 30jalNCH MIN SEM I-BRIG H T

Contextual Info: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 65V / 80A N-Channel Enhancement Mode MOSFET FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY80N07T 65V, RDS(ON)=7.2mW@VGS=10V, ID=30A

Contextual Info: STPS15L30CDJF Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Low thermal resistance ■ High avalanche capability specified A1 K A2 Description

9307-1

Contextual Info: HFA16PB120 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

HFA16PA120C

Abstract: IRFP250 16PA120
Contextual Info: HFA16PA120C Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 2 x 8 A FEATURES • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

HFA25PB60

Abstract: diode HFA25PB60 IRFP250
Contextual Info: HFA25PB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 25 A FEATURES • • • • • • BENEFITS Cathode to base • • • • • 4 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions

HFA08PB120

Abstract: IRFP250 08PB120
Contextual Info: HFA08PB120 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

Ultrafast recovery - 1200 V diode

Abstract: 93042 HFA08TB120 IRFP250
Contextual Info: HFA08TB120 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • BENEFITS Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

dt2 marking code

Contextual Info: HFA16PB120 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

HFA15TB60

Abstract: IR HFA15TB60 HFA15TB60-1 IRFP250
Contextual Info: HFA15TB60/HFA15TB60-1 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 15 A FEATURES HFA15TB60 • • • • • • HFA15TB60-1 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

HFA08TB60

Abstract: IRFP250
Contextual Info: HFA08TB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

HFA25TB60

Abstract: IRFP250
Contextual Info: HFA25TB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 25 A FEATURES • • • • • • Base cathode 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level

Contextual Info: HFA08TB60 Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES • • • • • • Base cathode 2 1 Cathode Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Designed and qualified for industrial level