entrelec diode
Abstract: Diode BFM diode 4007 DATASHEET din 4007 in 4007 diode 1SNA010134R1700 1SNA020021R1300 diode N 4007 diode 4007 diode in 4007
Contextual Info: Diode logic modules Di od M eL od og ule ic s 15 Index Logical signal conditioners . 15.1 - 15.8 Series 10 000. 15.2
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diode A610
Abstract: IP220-WI 5750600530 57.802.2353.0 250-0120 57.806.1053.0 5700300 71350 54-035 Z7.210.5027.0
Contextual Info: 210 Index rei. no. 01.001.5553.0 01.001.5653.0 01.001.5753.0 01.001.5853.0 01.001.6253.0 01.001.6353.0 01.001.6453.0 01.001.6553.0 01.001.6653.0 01.001.6753.0 01.108.3253.0 02.123.7021.0 02.123.7121.0 02.123.7221.0 02.123.7321.0 02.123.7421.0 02.124.0929.0
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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IRFZ34N
Abstract: for irfz34n IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRFZ34N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.040 Ω ID = 26A Description
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IRFZ34N
O-220
O-220AB.
O-220AB
IRF1010
IRFZ34N
for irfz34n
IRF1010
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IRFR5305
Abstract: IRFU5305 U5305
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1402 PRELIMINARY IRFR/U5305 HEXFET Power MOSFET l l l l l l D Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated VDSS = -55V
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IRFR/U5305
IRFR5305)
IRFU5305)
EIA-541
IRFR5305
IRFU5305
U5305
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IRF7604
Abstract: 11T2
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1263C IRF7604 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S 1 8 S 2
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1263C
IRF7604
IRF7604
11T2
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AN-994
Abstract: IRLR024N IRLU024N IRLZ24N
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1363A IRLR/U024N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V
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IRLR/U024N
IRLR024N)
IRLU024N)
AN-994
IRLR024N
IRLU024N
IRLZ24N
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kraus naimer CA 10
Abstract: kraus and Naimer cg4-1 rotary switch kraus and Naimer cg4 CEE24 VDE 0660 -107 kraus and Naimer 7045101K Kraus Naimer CAM 704-9890 VDE 0660 kraus and Naimer CEE 24
Contextual Info: EAO Product Information 5AHEAI " Switches and Indicators 04 Switches and Indicators Index Series 04 Description Page 67 Product Assembly Page 68 Mounting Instruction Page 71 Product Range - pushbuttons for standard mounting - pushbuttons for flush mounting
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MOSFET IRF 940
Abstract: AN-994 IRL3303 IRLR3303 IRLU3303 se 094
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1316B IRLR/U3303 PRELIMINARY HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3303 Straight Lead (IRLU3303) Advanced Process Technology Fast Switching Fully Avalanche Rated
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1316B
IRLR/U3303
IRLR3303)
IRLU3303)
MOSFET IRF 940
AN-994
IRL3303
IRLR3303
IRLU3303
se 094
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irf 940
Abstract: 1333B AN-994 IRL3103 IRLR3103 IRLU3103 MOSFET IRF 940 aval
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1333B IRLR/U3103 PRELIMINARY HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR3103 Straight Lead (IRLU3103) Advanced Process Technology Fast Switching Fully Avalanche Rated
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1333B
IRLR/U3103
IRLR3103)
IRLU3103)
irf 940
1333B
AN-994
IRL3103
IRLR3103
IRLU3103
MOSFET IRF 940
aval
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IRLU2905
Abstract: U2905 AN-994 IRLR2905 IRLZ44N
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1334A IRLR/U2905 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Ultra Low On-Resistance l Surface Mount IRLR2905 l Straight Lead (IRLU2905) l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated
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IRLR/U2905
IRLR2905)
IRLU2905)
IRLU2905
U2905
AN-994
IRLR2905
IRLZ44N
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IRFI1310G
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1222 IRFI1310G HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175°C Operating Temperature
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IRFI1310G
O-220
IRFI1310G
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IRLML5103
Abstract: sot23 footprint
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1260A IRLML5103 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching VDSS = -30V RDS(on) = 0.60Ω
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IRLML5103
OT-23
incorp00
IRLML5103
sot23 footprint
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IRL2703
Abstract: IRLR2703 IRLU2703 AN-994
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1335 IRLR/U2703 PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Surface Mount IRLR2703 Straight Lead (IRLU2703) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V
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IRLR/U2703
IRLR2703)
IRLU2703)
IRL2703
IRLR2703
IRLU2703
AN-994
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IRFI840G
Abstract: IRFIZ46N IRFZ46N IRFZ46N equivalent
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1306B IRFIZ46N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated VDSS = 55V RDS on = 0.020Ω
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1306B
IRFIZ46N
O-220
IRFI840G
IRFIZ46N
IRFZ46N
IRFZ46N equivalent
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IRLIZ34N
Abstract: MOSFET IRF 630
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1329A IRLIZ34N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
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IRLIZ34N
IRLIZ34N
MOSFET IRF 630
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IRF7107
Abstract: AN-994
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1099B IRF7107 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1 G1
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1099B
IRF7107
IRF7107
AN-994
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IRFP2410
Abstract: IRFPE30
Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling
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IRFP2410
O-247
FPE30
IRFP2410
IRFPE30
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MOSFET IRFZ46N
Abstract: IRFZ46N IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1277 IRFZ46N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.020Ω G ID = 46A
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IRFZ46N
O-220
preIRF1010
MOSFET IRFZ46N
IRFZ46N
IRF1010
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IRF9540N
Abstract: BU 11A
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1437 IRF9540N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω
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IRF9540N
-100V
O-220
IRF9540N
BU 11A
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IRF1010
Abstract: IRLZ34N
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRLZ34N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.035Ω
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IRLZ34N
O-220
IRF1010
IRF1010
IRLZ34N
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TRANSISTORS 132 GD
Abstract: IRF1010 IRF737LC
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω
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IRF737LC
IRF1010
TRANSISTORS 132 GD
IRF1010
IRF737LC
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IRF540N
Abstract: IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description
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IRF540N
O-220
commercial-indust10
IRF540N
IRF1010
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IRLZ24N
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1357A IRLZ24N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V
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IRLZ24N
O-220Y
IRLZ24N
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