DIODE MARKING 10 A Search Results

DPG10I300PA

Contextual Info: DPG 10 IM 300 UC advanced V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 3 2 Marking on Product: PAOGUI Backside: cathode Features / Advantages:

Contextual Info: DSA 10 I 100PM advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number 100 V 10 A 0.72 V Marking on product DSA 10 I 100PM 1 3 Features / Advantages: Applications: ● Very low Vf ● Extremely low switching losses

03866

Abstract: 07062
Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:

DPG10I300PA

Abstract: dpak DIODE ANODE COMMON
Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:

Contextual Info: DFE 10 I 600PM advanced 600 V 10 A 35 ns V RRM = I FAV = t rr = FRED Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number Marking on product 3 1 Backside: isolated Features / Advantages: Applications: Planar passivated chips Llow leakage current

DPG10I300PA

Contextual Info: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips

BAS16

Abstract: BAS16D
Contextual Info: BAS16D VISHAY Vishay Semiconductors Small Signal Diodes Features • Silicon Epitaxial Planar Diode • Fast switching diode • Also available in case SOT-23 with designation BAS16 Mechanical Data Case: SOD-123 Plastic Case Weight: approx.10 mg Marking: A6

GSM1900

Abstract: CA141 SWITCHPLEXER GSM1800 CA142 GSM900 LMSP54CA-141 LMSP54CA-142 GSM-1900 GSM900 murata
Contextual Info: Microwave Components RF Diode Switches 1.0±0.1 0.20±0.15 LMSP54CA-141 A : Pin 1 Marking 1.0±0.1 0.25±0.15 LMSP54CA-142 A : Pin 1 Marking 6 (11)(10) (9) (8) (7) 0.8±0.2 (1) : GSM1800 Rx (2) : Vc (GSM1900 Rx) (3) : GSM1900 Rx (4) : Vc (GSM1800/1900 Tx)

diode marking e41

Abstract: E41-15 diode 3A 1500V 1500V 3A diode
Contextual Info: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications

DPG10I300PA

Contextual Info: DPG10IM300UC HiPerFRED² VRRM = 300 V I FAV = 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10IM300UC Marking on Product: PAOGUI Backside: cathode 1 3 2/4 Features / Advantages: Applications:

Comchip Technology

Abstract: CDA3S06-G SOT23 NE SS MARKING sot23 TOP marking sot23-6 20 sot23-6 esd diode network 16
Contextual Info: Diode Network / ESD Suppressor CDA3S06-G RoHS Device Voltage:10 Volts Current: 50 mA Package (SOT23-6) Feature Marking “ DN3 “ This diode network is designedto provide four channels for active termination of high-speed data signals to eliminate signal undershootand

diode 1500V

Abstract: diode marking H2 mark h2 diode fast recovery diode 1500V diode marking e41 diode 3A 1500V
Contextual Info: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications

Contextual Info: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

330 marking diode

Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
Contextual Info: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 – JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL – D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60

Contextual Info: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current

bat18 a2

Abstract: top marking c2 sot23 BAT18 BAT18-05 A2 SOT23 AUS SOT23 c2 sot23 BAT18-04 top marking 3c sot23 BAT18-04 sot23
Contextual Info: BAT18.BAT18-05 Silicon RF Switching Diode 3
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance 2 1 BAT18 BAT18-05 BAT18-04 3 3 1 3 1 2 1 2 EHA07005 EHA07002 VPS05161 EHA07004 Type Marking Pin Configuration Package BAT18 A2s

BAT378W

Contextual Info: BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum Peak Forward Current IFM 200 mA Surge Forward Current (10 ms)

BAT378W

Abstract: MARKING CODE B7
Contextual Info: BAT378W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 1 2 Marking Code: B7 Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum Peak Forward Current IFM 200 mA Surge Forward Current (10 ms)

Contextual Info: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration

A940

Abstract: a940 Transistor transistor a940 DIODE BAT Q62702-A940 BAT18 A938 A942 Q62702-A787 Q62702-A938
Contextual Info: BAT 18 Silicon RF Switching Diode BAT 18 … ● Low-loss VHF/UHF switch above 10 MHz ● Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 BAT 18-04 AU Q62702-A938 BAT 18-05 AS Q62702-A940

BY228

Abstract: diode SOD 64 BYW56 SOD-64 BYW56 V SOD57 diode v
Contextual Info: Marking on Rectifiers Vishay Semiconductors Standard Avalanche Sinterglass Diode V V BY228 BYW56 17208 17207 SOD-57 SOD-64 Fig. 1 - Document Number: 84085 Rev. 1.0, 26-Feb-10 Fig. 2 - For technical questions, contact: DiodesSSP@Vishay.com www.vishay.com 1

Contextual Info: MMSD4448 Small Signal Diode SOD123 Color Band Denotes Cathode Top Marking: 10 Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 200

Contextual Info: DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips

Contextual Info: ERA34 0.1A ( 1000V / 0.1A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Ultra small package, possible for 5mm pitch automatic insertion High voltage by mesa design Marking Color code : Green High reliability 10 Applications