DIODE MARKING 016 Search Results

diode code ae

Contextual Info: Central" CLL2003 Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type isasilicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.

Contextual Info: 1N4448W PB FREE PRODUCT SURFACE MOUNT FAST SWITCHING DIODE FEATURES Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z z For General Purpose Switching Applications z High Conductance SOD-123 MARKING: T5 & A3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

1N4148WS

Contextual Info: 1N4148WS PB FREE PRODUCT SURFACE MOUNT FAST SWITCHING DIODE FEATURES SOD-323 MARKING: T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit VRM 100 V 75 V VR RMS 53 V Forward Continuous Current IFM 300 mA Average Rectified Output Current

Contextual Info: 1N4448WS PB FREE PRODUCT SURFACE MOUNT FAST SWITCHING DIODE FEATURES Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z z For General Purpose Switching Applications z High Conductance SOD-323 MARKING: T5 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

diode sod-123 marking code 120

Abstract: diode sod-123 marking code t2 BA 141 diode
Contextual Info: BAV19W-BAV21W SOD-123 Plastic-Encapsulate Diodes SOD-123 FAST SWITCHING DIODE FEATURES MARKING: BAV19W: A8 BAV20W: T2 BA 2 W T3 BAV21W: Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED diode k77 K77 diode
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

VISHAY diode MARKING ED

Abstract: K77 diode Vishay DaTE CODE BAT750 BAT750-GS08 BAT750-GS18 vishay ED
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

VISHAY diode MARKING ED

Abstract: VISHAY MARKING ED ED MARKING Vishay K77 diode VISHAY MARKING EA BAT750 BAT750-GS08 BAT750-GS18
Contextual Info: BAT750 VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • Very low forward voltage drop • Ultrafast switching • Ideal for hard-disk drive applications Parts Table Ordering code 1 2 18255 t 3 Marking ot R el ea s Part BAT750 1 Ye Case: SOT-23 Plastic case

"Diode low voltage"

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • RB551V-30 500 mA Schottky Barrier Diode 30 Volts Marking: D High Current Rectifier Schottky Diode

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • RB551V-30 500 mA Schottky Barrier Diode 30 Volts Marking: D High Current Rectifier Schottky Diode

KA2 DIODE

Abstract: DIODE marking A2 KA2 TO Ka2 transistor MMBD4148WT
Contextual Info: MCC BAS16WT MMBD4148WT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Power dissipation: 200mW Tamb=25℃ Collector current:150mA 200mW Switching Diode Marking: A2, KA2, KT1

75V 150mA Diode

Abstract: diodes ir K 250 diode transistor sot datasheet
Contextual Info: MCC BAW56WT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Power dissipation: 200mW Tamb=25℃ Collector current:150mA 200mW Switching Diode Marking: KJC SOT-323 A D Maximum Ratings

diodes ir

Abstract: 75V 150mA Diode IR 50RIA120 K 250 diode
Contextual Info: MCC BAV70WT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • Power dissipation: 200mW Tamb=25℃ Collector current:150mA 200mW Switching Diode Marking KJA SOT-323 A D Maximum Ratings

marking k43 diode

Abstract: Diode Marking .004
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAS40TW Features • • 200mW 40Volt Schottky Barrier Diode Pow Dissipation PD=200mW Tamb=25℃ IF=200mA Marking: K43 Maximum Ratings •

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components BAT60B Features • • • • • • • • • Small Signal Schottky Diode Marking: W5 Lead Free Finish/RoHS Compliant "P" Suffix

JXs sot

Contextual Info: BAS40 THRU BAS40-06 Schottky Diodes FEATURES SOT-23 •122 3.1 .118 (3.0) ♦ Top View .016 (0.4) These diodes feature very low turn-on voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.

BAS40

Abstract: BAS40-04 BAS40-05 BAS40-06
Contextual Info: BAS40 THRU BAS40-06 Schottky Diodes FEATURES SOT-23 ♦ These diodes feature very low turn-on .122 3.1 .118 (3.0) .016 (0.4) ♦ These devices are protected by a PN .056 (1.43) .052 (1.33) 3 junction guard ring against excessive voltage, such as electrostatic discharges.

Diode SOT-23 marking JE

Abstract: BAL99 BAV70 BAV99 BAW56 bav99 marking
Contextual Info: BAL99, BAV99 Small Signal Diodes FEATURES SOT-23 ♦ Silicon Epitaxial Planar Diode .122 3.1 .118 (3.0) .016 (0.4) Top View for automatic insertion. ♦ This diode is also available in other configurations including a dual common cathode with type designation BAV70 and a dual common anode with

DIODE marking 33

Abstract: diode marking 74 BAS70 BAS70-04 BAS70-05 BAS70-06
Contextual Info: BAS70 THRU BAS70-06 Schottky Diodes FEATURES SOT-23 ♦ These diodes feature very low turn-on .122 3.1 .118 (3.0) .016 (0.4) voltage and fast switching. Top View ♦ These devices are protected by a PN .056 (1.43) .052 (1.33) 3 .016 (0.4) .045 (1.15) .037 (0.95)

Contextual Info: BAT54 THRU BAT54S Schottky Diodes FEATURES SOT-23 •122 3.1 .118 (3.0) .016 (0.4) These diodes feature very low turn-on voltage and fast switching. Top View These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic dis­

marking L42

Abstract: BAT54 BAT54A BAT54C BAT54S
Contextual Info: BAT54 THRU BAT54S Schottky Diodes FEATURES SOT-23 ♦ These diodes feature very low turn-on .122 3.1 .118 (3.0) .016 (0.4) ♦ These devices are protected by a PN .056 (1.43) .052 (1.33) 3 junction guard ring against excessive voltage, such as electrostatic discharges.

MIL-STD-750 METHOD 2036

Abstract: 5082-2817 HSMS-28XX diode hp 5082-2817 hp2817
Contextual Info: Schottky Barrier Diodes for Mixers and Detectors Technical Data 5082-2817/18 Features • Low Noise Figure • High Burnout Rating 1 W RF Pulse Power Absorbed • Rugged Design • High Sensitivity Outline 15 0.41 .016 0.36 (.014) 25.4 (1.00) MIN. tension for 30 minutes). The

a7 surface mount diode

Abstract: AP-202 diode a7 surface mount device PAN202U ANP202U Diode Marking .004 marking A85 MARKING MO MU SOT-323 PAN217
Contextual Info: PAN202U / PANP202U / PAN217U SURFACE MOUNT SWITCHING DIODES SWITCHING DIODE 100m AMPERRES 80 VOLTS SOT-323 SC-70 .012(0.30) .016(0.40) .079(2.00) .094(2.40) .045(1.15) TOP VIEW .053(1.35) _ .012(0.30) .012(0.40) .004(0.10) .0098(0.25) .026(0.65) .071(1.80)

Contextual Info: Thn% H EW LETT» mL'EM PA CKARD Schottky Barrier D iodes for M ixers and D etectors Technical Data 5082 2817/18 - Features • Low Noise Figure • High Burnout Rating 1 W RF Pulse Power Absorbed • Rugged Design • High Sensitivity O utline 15 0.41 .016