DIODE MARK 16 Search Results

zener diode zg

Abstract: ZG zener E35A21VBR E35A21VBS
Contextual Info: SEMICONDUCTOR E35A21VBS, E35A21VBR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES A ・Average Forward Current : IO=35A. ・Zener Voltage : 21V Typ. POLARITY E35A21VBS (+ Type) : Mark : ZG E35A21VBR (- Type) : Mark : ZA

HSE11

Abstract: Hitachi DSA002712
Contextual Info: HSE11 GaAs Schottky Barrier Diode for SHF Mixer ADE-208-162A Z Rev. 1 Sep. 1994 Features • Low noise GaAs schottky. • Low capacitance. (C = 0.4pF max) Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP Outline Cathode mark 1 2 1. Cathode

Hitachi DSA00772

Abstract: HSE11
Contextual Info: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer Rev. 1 Sep. 1994 Features Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark 1 Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP 2 1. Cathode

Zener Diode B1 9

Abstract: hzu2.2btlf HZU22B1 PRI 504 diode
Contextual Info: HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer Features Outline • Ultra small Resin package URP is suitable for surface mount design. Cathode mark Mark T r i= • These diodes are delivered taped. itr H 2 Ordering Information Type No. Laser Mark

Contextual Info: HVC351-Variable Capacitance Diode for VCO Features Outline • Low series resistance. rs=0.35Q max • Ultra small Flat Package (UFP) is suitable for surface mount design. Cathode mark Mark X M -n 1 C; x: * 13 2 Ordering Information Type No. L aser Mark

Hitachi DSA00279

Abstract: mark SIN
Contextual Info: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Features • Good for high-frequency rectify. • LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark

Hitachi DSA0077

Abstract: Hitachi DSA00770 HRF22 HRF32 mark 32
Contextual Info: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for VR=40V, Io=1.0A, Output voltage=6Vmax. Cathode mark Mark • LRP structure ensures higher reliability. 1 Ordering Information

HSE11

Abstract: 27ma
Contextual Info: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer HITACHI Features Rev. 1 Sep. 1994 Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark Ordering Information Type No. M ark Package Code HSE11 Cathode mark ERP

Contextual Info: ADE-208-163B Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Rev. 2 Nov. 1994 Outline Features • G ood for high-frequency rectify for V r = 40V, Io=1.0A, Output voltage=6Vm ax. Cathode mark Mark • LRP structure ensures higher reliability.

Contextual Info: SURGE SUPPRESSOR DIODE DAM1MB FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Direction of polarity Unit in mm inch Type mark Lot mark 1.5 (0.06) 2.5 (0.1) B27 BN Cathode band

Contextual Info: HVC202A-Variable Capacitance Diode for UHF/VHF Tuner Features Outline • Low series resistance and good C-V linearity. • Ultra small Elat Package UFP is suitable for surface mount design. • Suitable for compact ET tuner. Cathode mark Mark

Contextual Info: HVU351-Variable Capacitance Diode for VCO Features Outline • Low series resistance. rs=0.35Q max • Ultra small Resin £ackage (URP) is suitable for surface mount design. Cathode mark Mark ft : Ordering Information 1. Cathode 2. Anode Type No.

Contextual Info: HVU351 Variable Capacitance Diode for VCO HITACHI Features • Low series resistance. rs = 0.35i2max • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVU351 6 URP Outline Cathode mark

Contextual Info: SURGE SUPPRESSOR DIODE DAM2MB FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Direction of polarity Unit in mm inch 2.0 (0.08) B2 7 BN 3.6 (0.14) Type mark Lot mark Cathode band

HVU351

Contextual Info: ADE-208-037C Z HVU351 Variable Capacitance Diode for VCO Preliminary Rev. 3 May. 1993 HITACHI Features Outline • Low series resistance. (rs=0.35il max) • Ultra small Resin Eackage (URP) is suitable for surface mount design. Cathode mark Mark , . . i _

HVU362

Abstract: Hitachi DSA00303
Contextual Info: ADE-208-348 Z HVU362 Variable Capacitance Diode VCXO Rev. 0 May. 1995 Features Outline • High capacitance ratio.(n=3.0min) • Good C-V linearity. • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark Ordering Information

ADE-208-024C

Abstract: Zener Diode B1 9 zener diode 82 b3 HZU22B1 DIODE MARKING CODE B3 zener 3B2 B1 6 zener ZENER DIODE B3 Hitachi Semiconductor zener diodes hzu2.2btlf
Contextual Info: ADE-208-024C Z HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 3 Aug. 1995 Outline • Ultra small Resin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Cathode mark Mark I-

Contextual Info: ! ADE-208-372 Z HVU367 Variable Capacitance Diode for VCO HITACHI Features Rev. 0 Jun. 1995 Outline • Low series resistance. (rs=0.4Q max) • Ultra small Eesin Package (URP) is suitable for surface mount design. Cathode mark Mark 77Î7: Ordering Information

RA code mark

Contextual Info: ADE-208-037D Z HVU351 Variable Capacitance Diode for VCO HITACHI Features Rev. 4 May. 1995 Outline • Low series resistance. (rs=0.35Q max) • Ultra small Resin Backage (URP) is suitable for surface mount design. Cathode mark Mark 1 EE Ordering Information

Contextual Info: ADE-208-036C Z HVU350 Variable Capacitance Diode for VCO Preliminary Rev. 3 May. 1993 HITACHI Features Outline • Low series resistance. (rs=0.50f2 max) • Ultra small Resin Package (URP) is suitable for surface mount design. Cathode mark Mark t » itr

7B1 zener diode

Abstract: Zener Diode B1 9 zener 3B2 HZU3.3 HZU22B1
Contextual Info: ADE-208-024C Z HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 3 Aug. 1995 Outline • Ultra small Eesin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Cathode mark Mark Ordering Information

diode hitachi schottky

Abstract: HSE11 diode hitachi Hitachi Scans-001
Contextual Info: H SE ll GaAs Schottky Barrier Diode for SHF Mixer HITACHI ADE-208-162A Z Rev. 1 Sep. 1994 Features • Low noise GaAs schottky. • Low capacitance. (C = 0.4pF max) Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP Outline C a th o d e m a rk

DSM3MA4

Contextual Info: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)

Contextual Info: FAST RECOVERY DIODE DFM3MF TENTATIVE SPECIFICATION FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Unit in mm inch Direction of polarity Type mark DC F F 2 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band