DIODE MARK 16 Search Results

HSE11

Abstract: Hitachi DSA002712
Contextual Info: HSE11 GaAs Schottky Barrier Diode for SHF Mixer ADE-208-162A Z Rev. 1 Sep. 1994 Features • Low noise GaAs schottky. • Low capacitance. (C = 0.4pF max) Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP Outline Cathode mark 1 2 1. Cathode

Hitachi DSA00772

Abstract: HSE11
Contextual Info: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer Rev. 1 Sep. 1994 Features Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark 1 Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP 2 1. Cathode

Hitachi DSA00279

Abstract: mark SIN
Contextual Info: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Features • Good for high-frequency rectify. • LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark

Contextual Info: ADE-208-163B Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Rev. 2 Nov. 1994 Outline Features • G ood for high-frequency rectify for V r = 40V, Io=1.0A, Output voltage=6Vm ax. Cathode mark Mark • LRP structure ensures higher reliability.

Contextual Info: HVU351 Variable Capacitance Diode for VCO HITACHI Features • Low series resistance. rs = 0.35i2max • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVU351 6 URP Outline Cathode mark

Contextual Info: HVC351 Variable Capacitance Diode for VCO HITACHI Features • Low series resistance. rs = 0.35i2max • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVC351 6 UFP Outline Cathode mark

DSM3MA2

Abstract: DSM3MA1 DSM3MA4 hitachi rectifier Hitachi DSA00276 Hitachi DSA00276599.
Contextual Info: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)

Contextual Info: GENERAL-USE RECTIFIER DIODE DSM1MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark B Z S A 4 1.5 (0.06) 2.5 (0.1) Lot mark Cathode band 2.0 (0.08) 4.3 (0.17)

KDZ11VY

Abstract: KDZ16V-Y marking a2 diode usc
Contextual Info: SEMICONDUCTOR KDZ2.0V~36V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. L A H F ・Nominal Voltage Tolerance About ±6%. 1 E ・Small Package : USC K CATHODE MARK FEATURES

DIODE MARKING 9Y

Abstract: 9vv marking kdz16vv marking zn diode marking 4Y KDZ12VVY KDZ36VV diode zener ZD 260
Contextual Info: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.

KDZ6.8DE

Contextual Info: SEMICONDUCTOR KDZ6.8DE TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE Small package for portable electronics. Nominal Voltage Tolerance About 5%. Low leakage current. E C 1 A FEATURES B CATHODE MARK CONSTANT VOLTAGE REGULATION APPLICATION. 2 D F

Contextual Info: SEMICONDUCTOR KDZ2.0V~33V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. L A H 6%. F Nominal Voltage Tolerance About 1 E Small Package : USC K CATHODE MARK FEATURES G B 2 J

KDV258E

Contextual Info: SEMICONDUCTOR KDV258E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. Low Series Resistance : rs=0.45 Max. E C 1 A High Capacitance Ratio : C1V/C4V =2.0(Min.) B CATHODE MARK FEATURES 2 MAXIMUM RATING (Ta=25

KDV358F

Abstract: KDV358
Contextual Info: SEMICONDUCTOR KDV358F TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES CATHODE MARK Good C-V Linearity. Low Series Resistance. : rS=0.4 Max. C 1 D 2 Small Package : TFSC. B A MAXIMUM RATING (Ta=25 )

KDV368F

Abstract: KDV368
Contextual Info: SEMICONDUCTOR KDV368F TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES CATHODE MARK Good C-V Linearity. Low Series Resistance. : rS=1.1 Max. C 1 D 2 Small Package : TFSC. B A MAXIMUM RATING (Ta=25 CHARACTERISTIC

2478 diode

Abstract: BAS85 BAT85 v1608
Contextual Info: TH97/2478 BAS85 TH09/2479 IATF 0060636 SGS TH07/1033 SCHOTTKY BARRIER DIODE MiniMELF SOD-80C FEATURES : Cathode Mark * For general purpose applications. * This diode features low turn-on voltage. * This device isprotected by a PN junction guard guard ring against excessive voltage, such as

Contextual Info: HVGT 2CL2FF 8kV 60mA HIGH VOLTAGE DIODE Outline Drawings : mm 2CL2FF is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 4.2 o 0.8 Features

10kv transformer

Abstract: high voltage CRT transformer ESJA09 ESJA09-10 ESJA09-12
Contextual Info: ESJA09 10kV,12kV/5mA Outline Drawings HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min.

HIGH VOLTAGE DIODE kv

Abstract: vr-22k 2KV DIODE
Contextual Info: ESJA28 2.2kV, 2.7kV/10mA Outline Drawings HIGH VOLTAGE DIODE ESJA19 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 2.5 27 min. Features

Contextual Info: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 1.7 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 2.1 (5) 0.2 0.65 0.65 zFeatures 1) Nch MOSFET and schottky barrier diode

Contextual Info: HVCA 2CL2FF 8kV 60mA HIGH VOLTAGE DIODE Outline Drawings : mm 2CL2FF is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 4.2 o 0.8 Features

Contextual Info: ESJA09 10kV,12kV/5mA Outline Drawings HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min.

ESJA09-12

Abstract: high voltage CRT transformer ESJA09 ESJA09-10 10KV DIODE
Contextual Info: ESJA09 10kV,12kV/5mA Outline Drawings HIGH VOLTAGE DIODE ESJA09 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min.

Contextual Info: ESJA08-08 8kV/5mA Outline Drawings : mm HIGH VOLTAGE DIODE ESJA08 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min.