DIODE MARK 16 Search Results

HSE11

Abstract: Hitachi DSA002712
Contextual Info: HSE11 GaAs Schottky Barrier Diode for SHF Mixer ADE-208-162A Z Rev. 1 Sep. 1994 Features • Low noise GaAs schottky. • Low capacitance. (C = 0.4pF max) Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP Outline Cathode mark 1 2 1. Cathode

Hitachi DSA00772

Abstract: HSE11
Contextual Info: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer Rev. 1 Sep. 1994 Features Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark 1 Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP 2 1. Cathode

Hitachi DSA00279

Abstract: mark SIN
Contextual Info: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Features • Good for high-frequency rectify. • LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark

Hitachi DSA0077

Abstract: Hitachi DSA00770 HRF22 HRF32 mark 32
Contextual Info: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for VR=40V, Io=1.0A, Output voltage=6Vmax. Cathode mark Mark • LRP structure ensures higher reliability. 1 Ordering Information

Contextual Info: ADE-208-163B Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Rev. 2 Nov. 1994 Outline Features • G ood for high-frequency rectify for V r = 40V, Io=1.0A, Output voltage=6Vm ax. Cathode mark Mark • LRP structure ensures higher reliability.

Contextual Info: HVU351 Variable Capacitance Diode for VCO HITACHI Features • Low series resistance. rs = 0.35i2max • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVU351 6 URP Outline Cathode mark

Contextual Info: HVC351 Variable Capacitance Diode for VCO HITACHI Features • Low series resistance. rs = 0.35i2max • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HVC351 6 UFP Outline Cathode mark

ADE-208-024C

Abstract: Zener Diode B1 9 zener diode 82 b3 HZU22B1 DIODE MARKING CODE B3 zener 3B2 B1 6 zener ZENER DIODE B3 Hitachi Semiconductor zener diodes hzu2.2btlf
Contextual Info: ADE-208-024C Z HZU Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 3 Aug. 1995 Outline • Ultra small Resin Package (URP) is suitable for surface mount design. • These diodes are delivered taped. Cathode mark Mark I-

DSM3MA4

Contextual Info: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)

Contextual Info: FAST RECOVERY DIODE DFM3MF TENTATIVE SPECIFICATION FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Unit in mm inch Direction of polarity Type mark DC F F 2 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band

DSM3MA2

Abstract: DSM3MA1 DSM3MA4 hitachi rectifier Hitachi DSA00276 Hitachi DSA00276599.
Contextual Info: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)

Contextual Info: FAST RECOVERY DIODE DFM1MF TENTATIVE SPECIFICATION FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Unit in mm inch Direction of polarity Type mark B Z F F 2 1.5 (0.06) 2.5 (0.1) Lot mark Cathode band

Contextual Info: GENERAL-USE RECTIFIER DIODE DSM1MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark B Z S A 4 1.5 (0.06) 2.5 (0.1) Lot mark Cathode band 2.0 (0.08) 4.3 (0.17)

GP 836 DIODE

Abstract: 3fv 60 HP 3379 KDZ9.1FV ZENER QF KDZ10FV KDZ20FV KDZ16VV KDZ3.6FV kdz16fv
Contextual Info: SEMICONDUCTOR KDZ3.6FV~KDZ36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : TFSC C 6%. D Nominal Voltage Tolerance About B DIM A B C

DIODE MARKING 9Y

Abstract: 9vv marking kdz16vv marking zn diode marking 4Y KDZ12VVY KDZ36VV diode zener ZD 260
Contextual Info: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES ・Small Package : VSC C D 1 2 ・Sharp Breakdown Characteristic. ・Normal Voltage Tolerance about ±6%.

RSX101M-30

Contextual Info: RSX101M-30 Diodes Shottky barrier diode RSX101M-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 0.1±0.1 0.05 1.6±0.2 ROHM : PMDU

KDZ10EV

Abstract: KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV KDZ24EV
Contextual Info: SEMICONDUCTOR KDZ2.0EV~36EV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK C Sharp Breakdown Characteristic. 1 A Small Package : ESC B FEATURES E 2 MAXIMUM RATING Ta=25

Contextual Info: SEMICONDUCTOR KDV375F TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES ・Narrow terminal Capacitance deviation. CATHODE MARK ・Low Series Resistance. : rS=1.1Ω Max. 1 C 2 D ・Good C-V linearity.

KDZ6.8DE

Contextual Info: SEMICONDUCTOR KDZ6.8DE TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE Small package for portable electronics. Nominal Voltage Tolerance About 5%. Low leakage current. E C 1 A FEATURES B CATHODE MARK CONSTANT VOLTAGE REGULATION APPLICATION. 2 D F

Contextual Info: SEMICONDUCTOR KDZ2.0EV~33EV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. A Sharp Breakdown Characteristic. 1 B Small Package : ESC E C CATHODE MARK FEATURES 2 D MAXIMUM RATING Ta=25

KDV216E

Abstract: C25V
Contextual Info: SEMICONDUCTOR KDV216E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. Low Series Resistance C E 1 A High Capacitance Ratio B CATHODE MARK FEATURES 2 MAXIMUM RATING Ta=25 CHARACTERISTIC D SYMBOL RATING UNIT Reverse Voltage

KDV270E

Abstract: C25V
Contextual Info: SEMICONDUCTOR KDV270E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. Low Series Resistance C E 1 A High Capacitance Ratio B CATHODE MARK FEATURES 2 MAXIMUM RATING Ta=25 D F CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage

Contextual Info: SEMICONDUCTOR KDZ2.0V~33V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. L A H 6%. F Nominal Voltage Tolerance About 1 E Small Package : USC K CATHODE MARK FEATURES G B 2 J

36V zener

Abstract: KDZ10V KDZ11V KDZ12V KDZ13V KDZ15V KDZ16V KDZ18V KDZ20V KDZ22V
Contextual Info: SEMICONDUCTOR KDZ2.0V~36V TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. L A H 6%. F Nominal Voltage Tolerance About 1 E Small Package : USC K CATHODE MARK FEATURES G B 2 J