DIODE M7 SMP Search Results

Contextual Info: Æ T SGS-THOMSON n0MilU10TI3 [fflnei STTB506B -TR TURBOSWITCH ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 5A V rrm 600 V Vf trr (max) 1.3 V (typ) 45 ns P R ELIM IN ARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched

45n80c

Abstract: 800 coolmos
Contextual Info: IXKN 45N80C CoolMOS Power MOSFET VDSS = 800 V ID25 = 44 A RDS on max = 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used as main or Kelvin Source

Contextual Info: bbS3=l31 0030475 4 SSE D N AMER PHI LIP S/DISCRETE BUK454-600A BUK454-600B PowerMOS transistor T - 37 - 1 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

45n80c

Abstract: E72873 IXKN45N80C
Contextual Info: IXKN 45N80C CoolMOS 1 Power MOSFET VDSS = 800 V ID25 = 44 A RDS on) max = 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used

fast diode SOT-227

Contextual Info: IXKN 45N80C COOLMOS * Power MOSFET VDSS = 800 V ID25 = 44 A RDS on max = 74 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used

Contextual Info: IXKN 45N80C CoolMOS 1 Power MOSFET VDSS = 800 V ID25 = 44 A RDS on) max = 74 m N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D miniBLOC, SOT-227 B S G G S E72873 S G = Gate S = Source D = Drain S D Either source terminal at miniBLOC can be used

Contextual Info: Æ T SGS-THOMSON noœiiuioTi^oifflnei STTB306B -TR TURBOSWITCH ”B” . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f (a v ) 3A V rrm 600 V Vf trr (max) 1.3 V (typ) 45 ns P R ELIM IN ARY DATASHEET FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:

tlo82

Abstract: TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842
Contextual Info: Worldwide Sales Offices Linear/Mixed-Signal Designer’s Guide Winter 2002 FRANCE ITALY PRC SWEDEN National Semicondutores da América do Sul Ltda. World Trade Center Av. das Nações Unidas, 12.551 22nd Floor - cj. 2207 04578-903 Brooklyn São Paulo, SP Brasil

e25 ferrite core

Abstract: MAGNETICA 1338.0019 AN2950 MAGNETICA TRANSFORMER 1338.0019 electronic watt-meter circuit diagrams magnetica PC817 OPTOCOUPLER SHARP working of ic 8038 VIPER28 application notes digital wattmeter circuit
Contextual Info: AN2950 Application note EVLVIPER28L-10W: 5 V/10 W, 60 kHz isolated flyback with extra power management Introduction This document describes a 5 V, 2 A application with 3.3 A peak current capability of 1.9 sec, using VIPer28, a new offline high-voltage converter from STMicroelectronics.

M7 diode vishay

Contextual Info: 100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Compliant to RoHS Directive 2002/95/EC • Very low stray inductance design for high speed operation

Contextual Info: VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Very low stray inductance design for high speed operation

Contextual Info: VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Compliant to RoHS Directive 2011/65/EU • Very low stray inductance design for high speed operation

Contextual Info: VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Very low stray inductance design for high speed operation

X4612

Contextual Info: 100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Compliant to RoHS Directive 2002/95/EC • Very low stray inductance design for high speed operation

Contextual Info: 70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation • Integrated thermistor

Contextual Info: 70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation • Higher switching frequency up to 150 kHz

vs-150mt060wdf

Contextual Info: VS-150MT060WDF www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Dual Forward FEATURES • Buck PFC stage with warp 3 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Very low stray inductance design for high speed operation

70MT060WSP

Abstract: maximum non-repetitive peak current
Contextual Info: 70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation • Integrated thermistor

VS-40MT060WFHT

Abstract: 01100-T
Contextual Info: VS-40MT060WFHT www.vishay.com Vishay Semiconductors Full Bridge IGBT and MOSFET MTP Power Module FEATURES • Generation 4 warp speed IGBT and power MOSFET technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses

Contextual Info: VS-70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation

Contextual Info: VS-70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation

CNW136

Abstract: Optocoupler 601 pulse transformer 4502 BS415 BS6301 BS7002 CNW135 CNW4502 MC8365
Contextual Info: P H ILIP S INTERNATIONAL HIE D • 7110ß2b 003Q4ba T MPHIN T - V Philips Semiconductors _ Product specification Wide body, high isolation, high-speed optocouplers FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

vs-100mt060wsp

Contextual Info: VS-100MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation