DIODE M7 Search Results

D1471

Abstract: M7 zener A3K1
Contextual Info: DATA SHEET ZENER DIODE RD6.2Z ZENER DIODE 200 mW ESD PROTECTION 5 V Signal Line MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Type RD6.2Z is planar type zener diode possessing an allowable (Unit: mm) power dissipation of 200 mW. 2.8±0.2 0.4+0.1 −0.05 The purpose is ESD PROTECTION of 5 V Signal Line.

Contextual Info: @ M ITEL DF685 Fast Recovery Diode S E M IC O N D U C T O R Supersedes Septem ber 1995 version, DS4303 - 1.2 DS4303 - 1.3 March 1998 APPLICATIONS KEY PARAMETERS • Snubber Diode For GTO Applications. ^rrm 4500V ^f av 445A 'fsm 4500A Qr 650(iC trr 5^is FEATURES

active crossover

Abstract: WE MIDCOM 8 lead soic-n package (R8) woofer amp circuit diagram AD8531 AD8532 AD8534 SOIC-14 High Speed Amplifiers msop-8 Branding M1
Contextual Info: Low Cost, 250 mA Output Single-Supply Amplifiers AD8531/AD8532/AD8534 Multimedia audio LCD driver ASIC input or output amplifier Headphone driver The very low input bias currents enable the AD853x to be used for integrators, diode amplification, and other applications

br 123 s

Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
Contextual Info: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital

Contextual Info: VS-70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation

PS2702-1

Abstract: PS2702-1-E3 PS2702-1-V PS2702-2 PS2702-2-V PS2702-4 PS2702-4-V VDE0884
Contextual Info: DATA SHEET PHOTOCOUPLER PS2702-1,PS2702-2,PS2702-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR −NEPOC SOP MULTI PHOTOCOUPLER SERIES TM Series− DESCRIPTION The PS2702-1, PS2702-2, PS2702-4, are optically coupled isolators containing a GaAs light emitting diode and an

Contextual Info: 70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES • Input rectifier bridge • PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Very low stray inductance design for high speed operation • Integrated thermistor

Contextual Info: 7MBR35SB120 IGBT Modules IGBT MODULE S series 1200V / 35A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply

Contextual Info: RKP413KS Composite Pin Diode for Antenna Switching REJ03G1613-0100 Rev.1.00 Jan 10, 2008 Features • • • • An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.31 pF max Low forward resistance. (rf = 1.5 Ω max @IF = 10 mA, f = 100 MHz)

7MBR50SB120

Abstract: 7MBR50SB-120
Contextual Info: 7MBR50SB120 IGBT Modules IGBT MODULE S series 1200V / 50A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply

Contextual Info: 7MBR50SB060 IGBT Modules IGBT MODULE S series 600V / 50A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply

M7 diode vishay

Contextual Info: 100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES • Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode • Integrated thermistor • Isolated baseplate • Compliant to RoHS Directive 2002/95/EC • Very low stray inductance design for high speed operation

SOT-353 MARKING 60

Abstract: sot23-5 marking xa
Contextual Info: MC74VHC1GT66 SPST NO Normally Open Analog Switch Features • • • • • • • High Speed: tPD = 20 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 1.0 mA (Max) at TA = 25°C Diode Protection Provided on Inputs and Outputs Improved Linearity and Lower ON Resistance over Input Voltage

PS9711

Abstract: PS9711-E3 PS9711-E4 PS9711-F3 PS9711-F4
Contextual Info: DATA SHEET PHOTOCOUPLER PS9711 HIGH NOISE REDUCTION HIGH-SPEED DIGITAL OUTPUT TYPE −NEPOC Series− 5-PIN SOP PHOTOCOUPLER TM DESCRIPTION The PS9711 is an optically coupled isolator containing a GaAlAs LED on light emitting diode input and a photodiode and a signal processing circuit on light receiving side (output side) on one chip.

Contextual Info: GEC P L E S S E Y S E M I C O N D U C T O R S M DS4145-3.3 DFS454 FAST RECOVERY DIODE KEY PARAMETERS vV RRM 2500V 365A ¡F AV 3500A u 200|xC Q, 2.0ns APPLICATIONS • Induction Heating. ■ A.C. Motor Drives. ■ Inverters And Choppers. ■ Welding. ■ High Frequency Rectification.

Contextual Info: G 8, fi/CANADA/OPTOELEK ET D 3 0 3 D b l 0 0 0 0 0 2 5 G 2b3 re c ti Optîi iCANA 7^4l-lV Infrared-Emitting Diode C30122 DATA S H EET C30122 - Surface Emitting LED in two lead TO-18 package • W avelength o f Peak Radiant Intensity 904 nanometers ■ Total Radiant Flux at IK= 100 mA

Contextual Info: SKN 136F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode 0# 0## 844 444 844 444 $1# 2 34 -5     '  / $1(0 2 67 ( - 84" 444 9"  2 44 :*/  63148 # 63148  6314 # 6314 44 44  631 Symbol Conditions $1(0

Contextual Info: SKKT 280, SKKH 280 SEMIPACK 3 new Thyristor / Diode Modules SKKT 280, SKKH 280 Preliminary Data Features                                          

Contextual Info: S T M7822 S amHop Microelectronics C orp. J ul.13 2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 6.5 @ V G S = 10V

Contextual Info: S T M7821 S amHop Microelectronics C orp. Dec 26 2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 13.5 @ V G S = 10V

ic cx 51

Abstract: cx 046 M74HC423B1R M74HC423 M74HC423M1R M74HC423RM13TR M74HC423TTR PO13H
Contextual Info: M74HC423 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED : tPD = 22 ns TYP. at VCC = 6V LOW POWER DISSIPATION: STAND BY STATE : ICC=4µA (MAX.) at TA=25°C ACTIVE STATE : ICC=700µA (TYP.) at VCC = 6V HIGH NOISE IMMUNITY:

005 418

Abstract: M74HC123 M74HC123B1R M74HC123M1R M74HC123RM13TR M74HC123TTR PO13H
Contextual Info: M74HC123 DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED : tPD = 23 ns TYP. at VCC = 6V LOW POWER DISSIPATION: STAND BY STATE : ICC=4µA (MAX.) at TA=25°C ACTIVE STATE : ICC=200µA (MAX.) at VCC = 5V HIGH NOISE IMMUNITY:

M74HC221

Abstract: M74HC221B1R M74HC221M1R M74HC221RM13TR M74HC221TTR PO13H M74HC221B1
Contextual Info: M74HC221 DUAL MONOSTABLE MULTIVIBRATOR • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED : tPD = 24 ns TYP. at VCC = 6V LOW POWER DISSIPATION: STAND BY STATE : ICC=4µA (MAX.) at TA=25°C ACTIVE STATE : ICC=700µA (MAX.) at VCC = 5V HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.)

M74HC221A

Abstract: M74HC221AB1R M74HC221AM1R M74HC221ARM13TR M74HC221ATTR PO13H
Contextual Info: M74HC221A DUAL MONOSTABLE MULTIVIBRATOR • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED : tPD = 24 ns TYP. at VCC = 6V LOW POWER DISSIPATION: STAND BY STATE : ICC=4µA (MAX.) at TA=25°C ACTIVE STATE : ICC=700µA (TYP.) at VCC = 6V HIGH NOISE IMMUNITY: VNIH = V NIL = 28 % VCC (MIN.)