DIODE LT 53 Search Results

905 nm Infrared Emitting Diode

Abstract: 1 Watt 808 nm laser diode S10 diode S10 package light sensitive trigger all components
Contextual Info: Pulsed Laser Diode Module LS-/LT-Series DESCRIPTION The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply

7040 TTL

Abstract: LS588 905 nm Infrared Emitting Diode
Contextual Info: Pulsed Laser Diode Module LS-/LT-Series Description The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply and a trigger

Contextual Info: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e

Contextual Info: SEHITRON INDUSTRIES LT» f M3E D • 013700^ 00Q01t>3 ? « S L C B Á "T ' U f SERIES Hermetically Sealed Glass Packaged ■Surge Suppressor Diode Voltage Range 5V1 to 200 Volts ■ 1 Watt Steady State 400 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

JU003

Contextual Info: ETK81-O5O 50a S ± / < 7 — POWER TRANSISTOR MODULE I f ô ii : : Features ij ' s r y i * - K r t s * 7 'j- s iw High DC Current Gain • hFE*', S ' . ' • ífe ltífí Including Free Wheeling Diode Insulated Type : Applications • • AC AC M otor Controls

diode lt 205

Abstract: CMLM0205 CMLM0705 CMLM2205 diode marking 53
Contextual Info: Central CMLM2205 M U LT I D I S C R E T E M O D U L E SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM SOT-563 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module ™ consisting of a single NPN

ITB68

Contextual Info: S E M IT R O N I N D U S T R I E S LT D 4 3E J> m B 137&&1 O O O O lb ? 4 E3 SLCB L7SERIES Hermetically Sealed Metal Packaged •Surge Suppressor Diode Voltage Range 5VI to 200 Volts 25 Watt Steady State ■1500 Watt Peak Power APPLICATIONS ELECTRICAL CHARACTERISTICS

transistor bel 100

Abstract: transistor f151 B-429 30S3 F151 M606 transistor BC 2500
Contextual Info: 6DI5OZ-12O 50a ‘ Outline Drawings POWER TRANSISTOR MODULE I 12 0 13 « I : F e a tu re s • S lt / E High Voltage • 7U— Krtilc • A S O ^ Ja I ' Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type • A p p lic a tio n s 31

2DI5OZ-12O

Abstract: B381 IB07
Contextual Info: 2DI5OZ-12O 50A l— ; u POWER TRANSISTOR MODULE : Features > K 9 ftE H ig h V o lt a g e * 7 >; — U — KF*3/K Including Free W heeling Diode * A S O * s'/ a ^ v Excellent Safe Operating Area Insulated Type I Applications • Jz'K 'tJX 'f "jJ- 's y High Power Switching

IN4745

Abstract: in4749 in4728
Contextual Info: 7" - / / - / 3 LI TE-ON INC CHE D | S 5 3 b 3 b 7 0 0 0 1 4 7 3 3 | IN4728 THRU IN 4764 1 WATT PLASTIC ZENER DIODE V O LT A G E RANGE 3.3 to 100 Volts POWER RATING 1.0 Watts =m = FEA TU RES: DO-41 • • • • Low cost Low zener impedance Excellent clamping

origin diode

Abstract: MD-36N4 A1sm
Contextual Info: SILICO N HIGH VO LTA G E R E C TIFY IN G DIODE MD- 3 6 N4 • |J - ORIGIN ELECTRIC CO LT» • S S 5ÖE D 3gJS äft*<*#L'o 400mA o 2. • 2. K I 6 * - r 7° bôl3074 QQaQGS3 73T • I. FEATURES 1. Axial lead type. 2. Io = 400 mA. I0RIJ /~0 t-O J APPLICATIONS

MRD500

Abstract: motorola MRD500 MRD510 laser diode RW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRD500 MRD510 P h o to D e te c to rs Diode Output PHOTO D E T E C T O R S DIODE O U TP U T PIN SILICO N 250 M ILLIW ATTS 100 V O LT S . . . d e sig n e d fo r a p p lic a tio n in laser d e te ctio n , lig h t d e m o d u la tio n , d e te ctio n o f v is ib le

H23L1

Abstract: EI114
Contextual Info: G E SOLI» STATE 01 Optoelectronic Specifications. DE J 3fl?SDfll □ □ l c]flD4 D | Ì ^ H ì- K Matched Emitter-Detector Pair H23L1 SYM A B Bi ÿb bi O E El e ei G L Lt R 5 T T he G E Solid State H 23L1 is a matched emitter-detector pair which consists o f a gallium arsenide, infrared emitting diode and a

ERD29

Abstract: F553 T151 T460 T810
Contextual Info: ERD29 2 .5A M B N 'iS : Outline Drawings FAST RECOVERY DIODE : Features : Marking Large current High voltage by mesa design, Ä 7 - 3 - K :« C o lo r c o d e : G re e n • f if f K H i High reliability .t y p e nam e V o lt a g e c la s s A D r ia g e a

LT 5247

Abstract: 5253-1N LT 5247 H LT 5224 diode LT 5245 IN5242 IC 5276 in5250 LT 5249 LT 5252
Contextual Info: Mierosemi Corp. f The diode experts SCOTTSDALE, A Z 1N 5221 thru 1N 5281 DO-35 F o r more inform ation call: 602 941-6300 FEATURES SILICO N • 2.4 TH R U 200 V O LTS 500 mW • C O M PAC T PAC K A G E ZEN ER D IO D E S • C O N S U LT FA C T O R Y FOR V O LTAG ES AB O V E 200 V

in4742a

Abstract: IN4728A IN4759A 1N4134A 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A
Contextual Info: 1N4728A thru 1N 4764A DO-41 G LASS Micro/semi Corp. ' The diode expens SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 602 941-6300 SILICO N 1 WATT ZEN ER D IO D E S FEATURES • 3.3 TH R U 100 V OLTS • H ER M ETIC G LA S S PAC KAGE • C O N S U LT FA C TO R Y FOR V O LTA G ES O VER 100 V

t333b

Abstract: ks52
Contextual Info: f 7294621 POWEREX IÑ{~bg 30 Amperes 4 5 0 Volts DE~| DODQfi'ia 7 | ”jL D< T -3 3 -3 5 Single Darlington T R A N S IS T O R Module Dim A B C D E F G H J K L Inches 2.09 M ax 1.42 .87 .216 .118 .197 .276 .35 .31 1.70 ± . 0 0 8 .216 Dia Millimeters 53 M ax

ufnd110

Abstract: T3535
Contextual Info: UNITRODE TS CORP 9347963 dF U N I T R O D E CORP | =5347^3 92D D.Gia717 10797 3 D POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled

WESTINGHOUSE scr

Abstract: WESTINGHOUSE ELECTRIC scr WESTINGHOUSE scr fast WESTINGHOUSE ELECTRIC application data scr westinghouse 12 Westinghouse diode Westinghouse Westinghouse Semiconductor
Contextual Info: 420A Avg. 650A RMS Up to 1800 Volts 8 0-10 0 j j s Fast Switching SCR T72H 42 Symbol 0D 0D, 0D2 H <pJ Jt L N Inches Min. 2.250 1.333 2.030 1.020 .135 .075 7.75 .040 Millimeters Min. Max. 57.15 58.17 33.86 34.11 51.56 53.09 25.91 26.92 3.43 3.68 2.29 1.91

STLT29

Abstract: STLT29FI STLT30 STLT30FI
Contextual Info: 7 ^ 5^537 0 0 2 1 2 0 e] fl STLT30/FI STLT29/FI SGS-THOMSON iy 5 7 , N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS S 6 S-TH0MS0N T YPE V DSS ^D Sfon Id STLT30 STLT30/FI 60 V 60 V cs 00 o o a 00 o o 25 A 15 A STLT29 STLT29/FI 50 V 50 V 0.08 n

d lt 7210

Abstract: IC ULN2803 lt 7210 LT 7210 transistor uln2803 driver ULN2803 application ULN2803 ULN2802 ULN2801 OF ULN2803
Contextual Info: MOTOROLA SC {TELECOM} 01 5367253 MOTOROLA SC D | t,3b?5S3 0 07 ^77 5 1 'J~ 01E 79772 CTELECOM ' D 7 ^ ^ 3 '2 r ULN2801 ULN2802 ULN2803 ULN2804 M O T O R O L A OCTAL HIGH VOLTAGE, HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS OCTAL PERIPHERAL D R IVER A R R A YS

2AK TRANSISTOR

Abstract: M0970 BT157-1300R BT157 IEC134
Contextual Info: N AMER PHILIPS/DISCRETE DbE D m ¡=.^53^31 0G11ÔS5 2 BT157 SERIES FAST GATE TURN-OFF THYRISTORS Thyristors in TO-22QAB envelopes capable o f being turned both on and o ff via the gate. They are suitable for use in high-frequency inverters, resonant power supplies, horizontal deflection systems etc

GTO philips

Abstract: lg diode 923 Philips gto M1475 IEC134 gto 5A M2739 gate turn-off diode 935 lg lg diode 932
Contextual Info: DEVELOPMENT DATA T his data sheet contains advance information and are subiect to change w ithout notice. N AMER PH ILI P S/ DI S CR ET E BTV160DV SERIES GbE D 1^53^31 DDinOS FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE S T -0 S T -/7 Fast gate tu rn -o ff thyristors w ith anti-parallel connected fast soft-recovery diodes in ISOTOP. They

LT 5206

Abstract: 1/LT 5206 LT/SG3527A
Contextual Info: SKM 200GB125D G% S LT UC+ / * 00 ,6&)7420) 08)%2<2)5 Absolute Maximum Ratings Symbol Conditions IGBT VCR1 GW S LT UC ?C GW S ITM UC ILMM V LMM D G%'0) S YM UC I=M D JMM D ¥ LM V IM `0 G%'0) S LT UC LMM D G%'0) S YM UC IJM D JMM D GW S ITM UC IbbM D G% S LT UC