DIODE LT 250 Search Results

905 nm Infrared Emitting Diode

Abstract: 1 Watt 808 nm laser diode S10 diode S10 package light sensitive trigger all components
Contextual Info: Pulsed Laser Diode Module LS-/LT-Series DESCRIPTION The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply

7040 TTL

Abstract: LS588 905 nm Infrared Emitting Diode
Contextual Info: Pulsed Laser Diode Module LS-/LT-Series Description The LS- and LT series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a + 5/12 VDC supply and a trigger

diode yz 040

Abstract: GP 836 DIODE DIODE 3FV 60 3fv 60 Diode LT 443
Contextual Info: SEM IC O N D U C TO R KDZ3.6FV-KDZ36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE C O N ST A N T V O LT A G E R EG U L A T IO N A PPL IC A T IO N . R E FE R E N C E V O LT A G E A PPL IC A T IO N . CATHODE MARK FEATURES • Small Package : TFSC

LT 0216 diode

Abstract: 20/LT 0216 diode Diode LT 410
Contextual Info: SGS-THOMSON ;[Li MM D(S MDS50 DIODE / THYRISTOR MODULE FEATURES • V qrm = V rrm UP TO 1200 V ■ lT(AV) = 35 A . HIGH SURGE CAPABILITY . INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTION The MDS50 family are constitued of one rectifier diode and general purpose SCR. Suited for

LT4320

Abstract: SML-010
Contextual Info: DEMO MANUAL DC1902B LT4320 Ideal Diode Bridge Controller Description Demonstration circuit 1902B features the ideal diode bridge controller LT 4320 suitable for applications that require low to medium current AC to DC full-wave rectification or DC polarity correction and a small compact solution

LT 0220 diode

Contextual Info: Philips Semiconductors Product specification Damper diode BY559X-1500U ultra fast, FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Low forw ard vo lt drop Low forw ard recovery voltage

IR E78996

Abstract: E78996 rectifier module E78996 Diode E78996 E78996 IR IRKH136-16D25 14D20 IR E78996 135 KL23014
Contextual Info: International H ]Rectifier Power Modules Thyristor with high voltage diode Voltage Range lT A V @ T c i f (a v (1) (2) (3) (4) Diode •TSM' >FSM (5) R th JC DC ) (3) (4) Thyristor (V) (V) (A) (°C ) 50 H z (A) IRKH136-14D20 IRKH136-16D25 IRKL136-14D20

Contextual Info: SEM ICONDUCTOR KTX303U TE CHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE SW ITC H IN G A PPLICATION. LOW V O LT A G E HIGH SPEED SWITCHING. FEA T U RE S • Including two TR, Diode devices in USV. (Ultra Super Mini type with 5 leads)

BY329X1500S

Abstract: BY329-1500 BY329-1500S BY329X-1500 BY329X-1500S by329x PTEM Diode LT 023
Contextual Info: Philips Semiconductors Product specification Damper diode BY329X-1500, BY329X-1500S fast, FEATURES • • • • • SYMBOL QUICK REFERENCE DATA V R = 1500 V Low forw ard vo lt drop Fast sw itching

4321F

Abstract: TG12 LT432
Contextual Info: LT4321 PoE Ideal Diode Bridge Controller Features Description n n n The LT 4321 is a dual ideal diode bridge controller that enables a Power over Ethernet PoE powered device (PD) to receive power in either voltage polarity from RJ-45 data pairs, spare pairs, or both. The LT4321 and

Contextual Info: Philips Semiconductors Objective specification Damper diode BY559X-1500U fast, FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA V R = 1500 V Low forw ard vo lt drop Low forw ard recovery voltage

MARKING CODE c25

Abstract: C25 schottky MOSFET C25 c25 mosfet n mosfet low vgs CMLM0205 10V Schottky Diode
Contextual Info: Central CMLM0205 M U LT I D I S C R E T E Semiconductor Corp. MODULE SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE TM TM DESCRIPTION: The Central Semiconductor CMLM0205 is a Multi Discrete Module ™ consisting of a single N-Channel MOSFET and a Low VF Schottky diode

749022016

Abstract: 749022017 SMBJ58A
Contextual Info: DEMO MANUAL DC2093A LT4275/LT4321 LTPoE+/IEEE 802.3at/ IEEE 802.3af Compliant Powered Device Interface Description Demonstration circuit 2093A features the LT 4275, a fourth generation powered device PD controller and the LT4321, an ideal diode bridge controller for Power over

Step-up 12V to 36V 300mA

Abstract: LT3473 LT3473A LT3473AEDE LT3473EDD LTC3473A ltc3436 3473
Contextual Info: LT3473/LT3473A Micropower 1A Boost Converter with Schottky and Output Disconnect U FEATURES DESCRIPTIO • The LT 3473/LT3473A are micropower step-up DC/DC converters with integrated Schottky diode and output disconnect circuitry in low profile DFN packages. The

dsei 31-06c

Contextual Info: Fast Recovery Epitaxial Diode FRED Type 440 640 400 600 Symbol LT— I <H-H- 1-0 DSEI 2x 30-04C DSEI 2x 31-04C DSEI 2x 30-06C DSEI 2x 31-06C Test Conditions DSEI 2x 30 DSEI 2x 31 Maximum Ratings (per diode) ^FRM TVJ T\um Tc = 85°C; rectangular, d = 0.5

TIC 44 SCR

Abstract: SCR TIC 44 MTO thyristor unial
Contextual Info: MITEL MP02 XXX 175 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes Septem ber 1992 version, 2.2 DS4477-3.0 Decem ber 1998 FEATURES • ■ ■ ■ ■ KEY PARAMETERS VDRM 1600V 'ts m 6800A lT AV (per arm) 175A Visol 2500V Dual Device M odule

DD100HB160

Abstract: 1S43 DF30CA DF60A df30aa
Contextual Info: S A NS HA ELECTRIC MF 6 CO T> 37E 7 cm S 4 3 ÖOOOOOb 1 E lT s E M J DIODE . T'Z3-0? ISOLATED TYPE 3 PHASE DIODE MODULE TYPE DF20AA DF20BA DF20CA DF20DB DF30AA DF30BA DF30CA DF30DB DF40AA V A *C 1200-1600 400— 800 800— 1600 400—800 1200-1600 400—800

1009I

Abstract: LT1009CZ LT317A 1009f 406p LT1019 LM136 LT1009 LT1009CH LT1009I
Contextual Info: LT1009 Series 2.5V Reference FEATURES DESCRIPTION n The LT 1009 is a precision trimmed 2.5V shunt regulator diode featuring a maximum initial tolerance of only ±5mV. The low dynamic impedance and wide operating current range enhances its versatility. The 0.2% reference

Diode LT 209

Abstract: SCR thyristor test
Contextual Info: SGS-IHOMSON MDS50 ly DIODE / THYRISTOR MODULE PRELIMINARY DATASHEET FEATURES • V d RM = V rrm UP TO 1200 V ■ lT AV = 3 5 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTIO N The MDS50 family are consist of one rectifier

DIODE 1N54

Abstract: 1N60 germanium diode 1N34 1N542 1N48 diode 1N38A diode 1N69a 1n81a 1N75 1N68
Contextual Info: GERMANIUM DIODE TYPE PEAK REV ERSE V O LTA G E AVERA G E FO RW ARD CU RREN T MINIMUM FO R W A R D CU RREN T A T 1 V O LT M AXIM UM REV ERSE CU RREN T A T 25°C V O LT S mA mA pA 1N34 75 50 5 50 a t -10V 1N34A 75 50 5 30 a t -10V 1N35 75 22.5 7 10 at -10V 1N36

1N135

Abstract: diode 1n295 1n69 1N541 1N295 1N128 1N69A 1N69A diode diode 1N69a 1N295 diode
Contextual Info: CRIMSON S E M I CONDU CT OR INC dF | SSlIOÌt 0D003S0 7 2514096 C R IMSON S E M I C O N D U C T O R INC 99D 00350 D T'Ot'Ol GERMANIUM DIODE TYPE PEAK RE VE R SE V O LT A G E AVERAGE FO RW AR D CURRENT V O LTS mA M INIMUM FO RW AR D CURRENT A T 1 V O LT M A X IM U M

LT3682EDD datasheet

Abstract: LT3682EDD#PBF MARKING TRANSISTOR BD RC B150 LQH55D LT3682 eef 1208
Contextual Info: LT3682 1A Micropower Step-Down Switching Regulator FEATURES DESCRIPTION n The LT 3682 is an adjustable frequency 250kHz to 2.2MHz monolithic buck switching regulator that accepts input voltages up to 36V. A high efficiency 0.5Ω switch is included on the device along with a boost diode and the

Contextual Info: Philips Semiconductors Product specification Damper diode fast, high-voltage FEATURES • • • • • BY459-1500, BY459-1500S SYMBOL QUICK REFERENCE DATA Low forw ard vo lt drop Fast sw itching S oft recovery characteristic High therm al cycling perform ance

BY329-1500

Abstract: by329 BY329-1500S
Contextual Info: Philips Semiconductors Product specification Damper diode fast, high-voltage FEATURES • • • • • BY329-1500, BY329-1500S SYMBOL QUICK REFERENCE DATA Low forw ard vo lt drop Fast sw itching S oft recovery characteristic High therm al cycling perform ance