DIODE LT 250 Search Results

Diode LT 410

Contextual Info: F = 7 SCS -THOMSON * 7 i» MDS35 M 3 © iL iC T [i» g S DIODE /THYRISTORMODULE FEATURES • V d rm = V rrm UP T 0 1200 V ■ lT(AV = 25 A ■ HIGH SURGE CAPABILITY ■ INSULATED PACKAGE: INSULATING VOLTAGE 2500 V(rmS) DESCRIPTION The MDS35 family are constitued of one rectifier

LBJK

Abstract: TA01a LT3463 3463 LT3463EDD CDRH3D16 CMD4D06 LPO4812 LT3463A LT3463AEDD
Contextual Info: LT3463/LT3463A Dual Micropower DC/DC Converters with Schottky Diodes U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 3463/LT3463A are dual micropower DC/DC converters with internal Schottky diodes in a 10-lead 3mm x 3mm DFN package. Negative and positive LT3463 converters have a 250mA current limit. The LT3463A positive

Contextual Info: Preliminary SMBL1G75US60 IGBT MODULE FEATURES • High Speed Switching • Low Conduction Loss : VCE sat = 2.1 V (typ) • Fast & Soft Anti-Parallel FWD • Short circuit rated : Min 10uS at Tc=100°C APPLICATIONS • Boost(Step Up) Converter • Dynamic Braking for Motor Drive

Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM50RSK060 FLAT-BASE TYPE INSULATED PACKAGE 1. V upc 2. U fo 3. U p 4. V upi 5. V vpc 6. V fo 7. V p 8. V vpi 9. V wpc 10. W fo 11 .W p 12. V wpi 13. V nc 1 4 .V ni 1 5 .B rn 1 6 .U n 1 7 .V n 1 8 .W n 19. F o 20. P

Contextual Info: MITSUBISHI IGBT MODULES CM30TF-12H MEDIUM POWER SWITCHING USE INSULATED TYPE J H H H M IH É Ü É M á iK •PPi* Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge con­

Contextual Info: MITSUBISHI IGBT MODULES CM600HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura­ tion with a reverse-connected su­ per-fast recovery free-wheel diode.

rosemount 118mf

Abstract: 2N4393 capacitor 106 35K sensor rosemount 118mf 106 35K CA3096 LT2078 LT2078ACS8 LT2079
Contextual Info: LT 2078/LT 2079 Micropower, Dual and Quad, Single Supply, Precision Op Amps U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION SO Package with Standard Pinout Supply Current per Amplifier: 50µA Max Offset Voltage: 70µV Max Offset Current: 250pA Max

sim 900A

Contextual Info: MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of one IGBT in a single configura­ tion, with a reverse connected su­

Contextual Info: MITSUBISHI IGBT MODULES CM300DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

Contextual Info: h4E D m • PObiEREX i n c Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 flflfl ■ PRX CM20TF-12E Six-IGBT IGBTMOD £ S B n G S M O C lU lB

Contextual Info: m W H b4E ?5T4b21 □□Obb7E 32fl HPRX E X _ CM300HA-28_ S inale IGBTMOD™ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14

Contextual Info: MITSUBISHI IGBT MODULES CM75TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge con­ figuration, with each transistor hav­

Contextual Info: MITSUBISHI INTELLIGENT POWER MODULES PM150RSA060 FLAT-BASE TYPE INSULATED PACKAGE 1. V upc 2. U F o 3. U p 4. V upi 5. V vpc 6. V F o 7. V p 8. V vpi 9. V wpc 10.W FÒ 11. 12. 13. 14. 15. 16. 17. 18. 19. Wp V wpi V nc V ni Br Un Vn Wn Fo Description: Mitsubishi Intelligent Power Mod­

westinghouse scr

Abstract: Westinghouse SCR data westinghouse t607 westinghouse scr t607
Contextual Info: 125 A Avg. 200 R M S Up to 1 2 0 0 Volts 10-50 /Js Fast Switching SCR T 607_ _1 3 Inches_ Millimeters Symbol A A, B <t>D E F J M N Q <*>T Z <t>VJ M aXi 7.750 7.750 .063 .980 1.212 .250 3.25 .530 1.040 8.100 8.100 .172 1.090 1.250 .630 .755 1.077

Contextual Info: MITSUBISHI IGBT MODULES CM150DY-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

Contextual Info: MITSUBISHI IGBT MODULES CM75TF-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor

Contextual Info: MITSUBISHI IGBT MODULES CM75DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half bridge configu­ ration with each transistor having

CM100DY-24H

Contextual Info: MITSUBISHI IGBT MODULES CM100DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half-bridge configu­ ration with each transistor having a

Contextual Info: MITSUBISHI IGBT MODULES CM300DY-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: 3 TYP N— -T A B #110, t = 0.5 — N Q —m - h K- I ' I i N -O ü -O lu Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two

Contextual Info: MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­

diode js

Abstract: DIODE JS.6 IXYS IXBOD
Contextual Info: n i • I i1 YA vJL U IXBOD 1 -06.10 Single Breakover Diode > o ffl ±50 ±50 ±50 ±50 =600 -1000V ^AVM ” A Standard V 600 800 900 1000 VB0 Types IXBOD IXBOD IXBOD IXBOD 1 -06 1 -08 1 -09 1 -10 Symbol Test Conditions Ratings Id T w = 25°C; V = 0,8x V B0

6AI diode

Contextual Info: International IS Rectifier 4Ö5545E Oülb?^ 32fl H I N R SERIES IRK.F152 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features • ■ ■ ■ ■ ■ Fast turn-off thyristor Fast recovery diode High surge capability E lectrically isolated baseplate

Contextual Info: Q Thyristor Modules Thyristor/Diode Modules MCC 310 MCD 310 ^TRMS ^TAVM = 2 x 500 A = 2 x 320 A v RRM = 800 -1800 V v RSM V RRM v DSM V DRM V V Type 800 900 1300 1500 1700 1900 1200 1400 1600 1800 Version 1 Version 1 MCC 310-08io1 MCC 310-12io1 MCC 310-14io1

2rx .jc .5h

Contextual Info: / TC74HC123AP/AF/AFN D U A L R E T R I G G E R A B L E MONOSTABLE M U L T IV IB R A T O R T h e T C 7 4 H C 1 2 3 A is a h ig h speed C M O S M O N O S T A B L E M U L T IV IB R A T O R fa b r ic a te d w ith s ilic o n g a te C ! M O S te c h n o lo g y .