DIODE LT 216 Search Results

t333b

Abstract: ks52
Contextual Info: f 7294621 POWEREX IÑ{~bg 30 Amperes 4 5 0 Volts DE~| DODQfi'ia 7 | ”jL D< T -3 3 -3 5 Single Darlington T R A N S IS T O R Module Dim A B C D E F G H J K L Inches 2.09 M ax 1.42 .87 .216 .118 .197 .276 .35 .31 1.70 ± . 0 0 8 .216 Dia Millimeters 53 M ax

Contextual Info: Û13bb71 0 D0 L S3 Û _ 4 24 SKiiP 362 GDL 060 - 453 WT 12 Absolute Maximum Ratings Symbol | Conditions Values Units 600 400 300 600 - 4 0 . + 150 2500 300 600 2160 23,4 V V A A °C V A A A kA2s 18 30 75 V V kV/ is °C 1) IGBT & Inve rse Diode V ces Operating DC link voltage

1N 3000 DIODE

Abstract: 14R7 Scans-0017298 general electric
Contextual Info: 14R7 14R.7 PAGE I Description and Rating DUPLEX-DIODE PENTODE GENERAL DESCRIPTION Pr i n c i p a l Application: semi-remote-cutoff combined fi er detector, The I4R7 pentode for us e as a automatic-voIume-controI and audio amplifier. a l s o be us ed as a r a d i o - f r e q u e n c y or i n t e r m ed ia te f r e q u e n c y a m p l i f i e r . Th e tube fe at ur es low co upling

capacitor 1000uf 6.3V

Abstract: FDS6670A FDS7760A LMK316F106ZL LTC1929 BAT54A capacitor 1000uf 10uF 16V Electrolytic Capacitor capacitor 1000uf 63v CEP-14
Contextual Info: advertisement PolyPhase Surface Mount Power Supply Meets AMD AthlonTM Processor Requirements with No Heat Sink – Design Note 216 Craig Varga Introduction With the introduction of AMD’s Athlon processor, the supply current requirement for a desktop PC’s processor

capacitor 1000uf 6.3V

Abstract: LMK316F106ZL 12V 40A voltage regulators 12v 30A regulator BAT54A FDS6670A FDS7760A LTC1929 5V 40A DESIGN POWER SUPPLY capacitor 1000uf 63v
Contextual Info: advertisement PolyPhase Surface Mount Power Supply Meets AMD AthlonTM Processor Requirements with No Heat Sink – Design Note 216 Craig Varga Introduction With the introduction of the AMD Athlon processor, the supply current requirement for a desktop PC’s processor

Contextual Info: • fll3bb71 0Q05G55 Ô 54 SKiiP 292 G D L 170 - 472 WT Absolute Maximum Ratings Symbol Values Units 1700 1200 250 500 - 5 5 . . . + 150 3500 230 500 2160 23,4 V V A A A kA2s 18 30 75 - 2 5 . . . + 85 V V kV/jxs °C |Conditions 11 IGBT & Inve rse Diode V ces

IRF645

Abstract: IRF646 IRF644 100AH IRF647 Rf644 IFIF644 IFIF646
Contextual Info: _ Rugged Power MOSFETs File Num ber 2169 IRF644, IRF645, IRF646, IRF647 Avalanche Energy Rated N-Channel Power MOSFETs N-CHANNEL ENHANCEMENT MODE 14A, and 13A, 275V, 250V rDS on = 0.280, 0 .3 4 0 Features: • Single pulse avalanche energy rated

th 2167

Abstract: sw 13001
Contextual Info: Ordering number : ENN6901 N-Channel Silicon MOSFET MCH3412 ISAÊlYOi Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resinstance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2167 [M C H 3 412 ] 0.15, 4 l l ip — 0.65

irkt 132 12

Contextual Info: • International SRectffier 4B55452 741 « I N R INTERNATIONAL RECTIFIER bSE D SERIES IRK.F72 FAST SCR / DIODE and SCR / SCR INT-A-PAK Power Modules Features Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate

th 2167

Contextual Info: 1 Ordering number : ENN6911 N-Channel Silicon MOSFET MCH3409 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. Package Dimensions unit : mm 2167 [M C H 3 409 ] 0 . 15 . 1 : G ate 2 : Source

Contextual Info: C o n d itio n s 1> Viso, 4 AC, 1min Operating / stor. tem perature /— >I Q Sym bol 0—I SKiiP 3-phase bridge Absolute Maximum Ratings SKiiPPACK Values Units 4000 V -25.+85 °C 1700 1200 V V 250 -40.+150 250 500 2160 23 A °C A A A kAs2 IGBT and Freewheeling Diode

Contextual Info: C o n d itio n s 1> vV ¡sol 4> AC, 1 min —I Operating Q Sym bol —I o o SKiiP 3-phase bridge Absolute Maximum Ratings / SKiiPPACK Values Units 3000 V -25.+85 °C 1200 900 300 -40.+150 300 600 2160 23 V V A °C A A A kAs2 18 30 20 75 V V kHz kV/us stor. tem perature

Contextual Info: Super Fast Recovery Diode Single Diode •¿m H OUTLINE D4L20U 200V 4A F eatu re • Low Noise • tnr=35ns • Full Molded • s v -rx • trr=35ns M ain Use • • • • • 7 5 '1 'T n - J L / * ^ .O A J .S • ii f f i. F A Switching Regulator Fly Wheel

14511B

Abstract: display lt 313 mc14511b of mc14511b MC14511BCP
Contextual Info: MC14511B BCD−To−Seven Segment Latch/Decoder/Driver The MC14511B BCD−to−seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The circuit provides the functions of a 4−bit storage latch, an 8421

cd4541 application

Abstract: ic 4541 cd4541 4541 Timer si4435 2N3906 LT1505 MBRS140 MMSD4148T1 cd4541 timer
Contextual Info: advertisement Simple Li-Ion Charge Termination Using the LT1505 Design Note 244 Mark Gurries The LT1505 provides a logic signal output called “FLAG” that is intended to help implement a Li-Ion charge termination mechanism. In the constant voltage portion of the

Contextual Info: Preliminary Information February, 1992 LXT500 U-lnterface Transceiver General Description Features The LXT500 is a 2-wire echo-cancelling transceiver which offers unique advantages for Universal Digital Channel UDC , pair gain and other "data-pipe" applications. It

Contextual Info: AH5009/AH5010/AH5011/AH5012 a National Semiconductor AH5009/AH5010/AH5011/AH5012 Monolithic Analog Current Switches • ■ ■ ■ ■ General Description A versatile family ot monolithic JFET analog switches eco­ nomically fulfills a wide variety of multiplexing and analog

Contextual Info: TAIWA N LIT ON E L E C T R O N I C HTE D flöBStiTS O Q O B H ^ b OQE • T L I T , LED PANEL DOT INDICATORS LT L-1204A/717R LTL-1214A/717P LT L-1224A/717HR LT L-1234A /7 17G RED LTL-1254A/717Y BRIGHT RED LTL-1274A/717A HIGH EFFICIENCY RED LTL-1294A GREEN

scr tic 106

Abstract: HBP MITEL
Contextual Info: M ITEL MP03 XXX 300 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes January 1994 version, 4.2 DS4482-5.0 Decem ber 1998 FEATURES • Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction ■ International Standard Footprint

HBP MITEL

Abstract: RECTIFIER DIODE 1000A 2500V 3-phase 50hz Bridge Rectifier
Contextual Info: MITEL MP03 XXX 275 Series Phase Control Dual SCR, SCR/Diode Modules SEM IC O N D U C T O R Supersedes January 1994 version, 3.2 DS4481-4.0 Decem ber 1998 FEATURES • Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction

MTO thyristor

Abstract: Thyristor ys MAS220S
Contextual Info: @ M IT E L MAS220S _ Fast Turn-off Asymmetric Thyristor/Diode Module SEMICONDUCTOR Supersedes Decem ber 1995 version, DS4199-1.1 DS4199-4.2 April 1999 Applications • High Frequency High Power Choppers And Inverters • Ultrasonic Generators. •

1SV149

Contextual Info: TOSHIBA 1SV 149 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS 4.2MAX. • High Capacitance Ratio : C iy /C g y = 15 Min. • High Q : Q = 200 (Min.) • Small Package • Low Voltage Operation

motorola mc14511b

Abstract: MC14511B "MOTOROLA CMOS LOGIC DATA" of mc14511b semiconductors bi 370 AN84-21 Motorola MC14070B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14511B BCD-To-Seven Segment Latch/Decoder/Driver L SUFFIX CERAMIC CASE 620 The MC14511B BCD–to–seven segment latch/decoder/driver is constructed with complementary MOS CMOS enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The circuit

GT20J311

Contextual Info: TOSHIBA GT20J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J31 1 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 15.9MAX. The 3rd Generation Enhancement-Mode High Speed : tf^O.SO/^s Max. Low Saturation Voltage : V qe (sat)~^.7V (Max.)