DIODE LT 213 Search Results

Diode LT 213

Contextual Info: TAIW AN LIT ON E L E C T R O N I C L I T E W ? 41E D • flöBSb^S O Q O B M b S 43^ « T L I T LTl,-203 RED LTL-233 GREEN LtL-213 BRIGHT RED ; VLTL-223 m m 1FFR3ÏENCY R | ¡ V t W ' Ì P W I ^ -1 ' : r - v m ^ L \ FEATURES • LOW POWER CONSUMPTION. • HIGH EFFIC IE N C Y.

suncon 1000uf capacitor

Contextual Info: DEMO MANUAL DC2134A LTC4020EUHF High Power Buck-Boost Multi-Chemistry Battery Charger Description Demonstration circuit 2134A is a high power buck-boost multichemistry battery charger featuring the LTC 4020. The board will accept an input voltage between 15V and

m1305 transistor

Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Contextual Info: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082

1N1183A

Abstract: 1N1185A 1N2128 1N2129 1N2130 R3605 R3610 S3605 S3610 S3615
Contextual Info: I Series 36 II Avalanche Silicon Power RcctifivTS ELECT RIC A L C H A R A C T E R IS T IC S : M a x im u m A v e r a g e F o rw a rd C urren t, S in g le P h a se H a lf W a v e D C R a tin g a t 121° C. C a se T em p era tu re . 6 5 a m p eres M a x im u m S u r g e C u rre n t

cd4541 application

Abstract: ic 4541 cd4541 4541 Timer si4435 2N3906 LT1505 MBRS140 MMSD4148T1 cd4541 timer
Contextual Info: advertisement Simple Li-Ion Charge Termination Using the LT1505 Design Note 244 Mark Gurries The LT1505 provides a logic signal output called “FLAG” that is intended to help implement a Li-Ion charge termination mechanism. In the constant voltage portion of the

CQF58

Abstract: 1550 laser diode cd laser diode ingaasp 1550 laser diode
Contextual Info: Philips Components _ A D E V E L O P M E N T DATA c q f s s /d _ T h is data sh e e t c on ta in s a dvance inform ation and sp e cifica tio n s w h ic h a re su b je ct to c h a n g e w ith o u t notice. BURIED HETEROJUNCTION InGaAsP LASER DIODE

triac tic 2260

Abstract: NATIONAL LINEAR APLICATION VALVO V42310-Z110 B250C1500 B250C1500 B B80C1000 telequarz B80C800 datasheet LT 735
Contextual Info: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3 Revision History: Previous Releases: Page Original Version: 09.94 02.95 Subjects changes since last revision Update including appendix Data Classification

SSH6N60

Abstract: 250M SSH6N55 MOSFET 600v 60a
Contextual Info: N-CHANNEL POWER MOSFETS SSH6N60/55 FEATURES • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: TIL181 OPTOCOUPLER D 2 9 0 6 , OCTOBER 1 9 8 5 -R E V IS E D MARCH 1 98 8 COMPATIBLE W ITH STANDARD TTL INTEGRATED CIRCUITS • Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor • High Direct-Current Transfer Ratio

Contextual Info: AH5009/AH5010/AH5011/AH5012 a National Semiconductor AH5009/AH5010/AH5011/AH5012 Monolithic Analog Current Switches • ■ ■ ■ ■ General Description A versatile family ot monolithic JFET analog switches eco­ nomically fulfills a wide variety of multiplexing and analog

Contextual Info: DFB54 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4219 - 2.4 Supersedes Septem ber 1996 version, DS4219 - 2.3 KEY PARAMETERS v RRM 3500V 2135A Jf AV 20000A FSM 1500|lC Q r APPLICATIONS • Pow er Supplies. ■ Freewheel Diode. ■ Battery C hargers. ■

lg led tv electronic diagram

Abstract: LG 631 TV LG lcg M67s p2q2 datasheet light emitting diode Q65110A2431 LYYYG6SF-CADB-35 LCB E6SG LED 5mm 12000 mcd white 2700K LCB M67S LW W5SM
Contextual Info: Light Emitting Diodes Lumineszenzdioden 11 Light Emitting Diodes . Lumineszenzdioden . 11 Safety Instructions .

Contextual Info: MDFBÔ5 M ITEL Fast Recovery Diode SEMICONDUCTOR Supersedes August 1995 version, DS4177 -1 .2 DS4177 -1 .3 KEY PARAMETERS V RRM 4500V I F AV 2130A 20000A ^FSM 2200|iC Q APPLICATIONS • Freewheel Diode. ■ D.C. Motor Drives. ■ Welding. ■ High Frequency Rectification.

Contextual Info: s e MIKRO n zurück V rsm V rrm dv/ SEMIPACK 3 Thyristor / Diode Modules Itrms (maximum values for continuous operation 370 A V drm dt)cr 420 A 370 A 420 A Itav (sin. 180; Toase = 85 °C) V 900 V 800 V/|xs SKKT 213 SKKT 253 230 A 253 A 230 A 250 A SKKT

2n6800

Abstract: saft rectifier
Contextual Info: UNITRODE CORP 9347963 TE3 UNITRODE CORP De " | 92D 10578 POWER MOSFET TRANSISTORS 1T 4 00 Volt, 1.0 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability 0Ü10S7Ô

relay ras 1210

Abstract: tea 2037 IRFD210R FD213 relay 12 volts ras 1210 IRFD211R IRFD212R IRFD213R 03a s4
Contextual Info: Rugged Pow er M O SFETs File Num ber 2037 IRFD210R, IRFD211R, IRFD212R, IRFD213R Avalanche Energy Rated N-Channel Power MOSFETs 0.6A and 0.45A, 150V-200V rDS o n = 1 .5 0 a nd 2 .4 0 N-CHANNEL ENHANCEMENT MODE

p-channel mosfet driver

Abstract: diode r4 DN201 SUMIDA CD54-150 BAT54S LTC1627 TPSC107M006R0150 TPSC226M016R0375 BAT54S avx DN20-1
Contextual Info: advertisement A New, High Efficiency, Monolithic Synchronous Step-Down Regulator Works with Single or Dual Li-Ion Batteries Design Note 201 Jaime Tseng Li-Ion batteries, with their high energy density, are becoming the chemistry of choice for designers of many

ufnf210

Contextual Info: POWER MQSFET TRANSISTORS ^ nfI ii 200 Volt, 1.5 Ohm N-Channel UFNF212 UFNF213 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R ds.o and a high transconductance. FEATURES

Contextual Info: MDFB85 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4177 - 1.3 Supersedes August 1995 version, DS4177 - 1.2 APPLICATIONS March 1998 KEY PARAMETERS 4500V 2130A F AV 20000A FSM 2200|lC VRRM Freewheel Diode. I D.C. M otor Drives. W elding. Qr I High Frequency R ectification.

Contextual Info: um TECHNOLOGY _ LT 1001 Precision O perational Amplifier F€flTUR€S D € S C R IP T IO n • Guaranteed Low Offset Voltage LT1001AM 15/xV max LT1001C 60juV max ■ Guaranteed Low Drift The LT1001 significantly advances the state-of-theart of precision operational amplifiers. In the design,

ls 123

Abstract: T74LS123 LS122 LS123
Contextual Info: PRELIMINARY DATA RETRIGGERABLE MONOSTABLE MULTIVIBRATORS DESCRIPTION These multivibrators feature a negative-transition triggered input and a positive-triggered input either of which can be used as inhibit input. Also inclu­ ded is a clear input that resets the multivibrator

Contextual Info: _BAS86 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage ¿y Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25°C

pm20cea060

Abstract: pm20ce pm20cea 20CEA 3 phase igbt INVERTER ac motor
Contextual Info: POiilEREX INC S IE D • 72=141,21 D 0 0 5 t .l l 02T ■ PRX P M 20C E A 060 ~ F -'S '7 -2 -ci Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 ln te lH lflO if^ ^ -2 M o d u le s Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14

4N50

Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB