DIODE L48 Search Results

Contextual Info: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

Contextual Info: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

L4804A

Abstract: SDP04S60 SIDC01D60SIC2 SCHOTTKY 4A 600V
Contextual Info: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

DIODE 200A 600V schottky

Abstract: SWITCHING DIODE 600V 2A SDP02S60 SDP02s L4834A SIDC00D60SIC2 600 V power Schottky silicon carbide diode
Contextual Info: Final SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

SDP02S60

Abstract: SWITCHING DIODE 600V 2A A102 diode sdp02s
Contextual Info: Preliminary SIDC00D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

SPD06S60

Abstract: diode schottky 600v infineon SIDC02D60SIC2 Carbide Schottky Diode
Contextual Info: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

SCHOTTKY 4A 600V

Abstract: DIODE 200A 600V schottky
Contextual Info: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

Contextual Info: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

Contextual Info: Preliminary SIDC01D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

SPD06S60

Contextual Info: Preliminary SIDC02D60SIC2 Silicon Carbide Schottky Diode FEATURES: • Worlds first 600V Schottky diode • Revolutionary semiconductor material Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching

Contextual Info: BAT54WS SANGDEST MICROELECTRONICS SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0714, Rev. B Green Products BAT54WS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: • • • • • • • • • Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection

Contextual Info: L4833J Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage40 Q Factor Min. f(co) Min. (Hz) Cut-off freq.70G P(D) Max. (W)3.0¥ Semiconductor MaterialSilicon Package StylePin

Contextual Info: L4834 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.3p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage40 Q Factor Min. f(co) Min. (Hz) Cut-off freq.2.5G P(D) Max. (W)5.0¥ Semiconductor MaterialSilicon Package StylePin

Contextual Info: L4833H Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.2p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage40 Q Factor Min. f(co) Min. (Hz) Cut-off freq.60G P(D) Max. (W)3.0¥ Semiconductor MaterialSilicon Package StylePin

Contextual Info: L4842 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.600f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage60 Q Factor Min. f(co) Min. (Hz) Cut-off freq.2.5G P(D) Max. (W)2.0¥ Semiconductor MaterialSilicon Package StylePin

Contextual Info: L4831H Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.250f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage40 Q Factor Min. f(co) Min. (Hz) Cut-off freq.60G P(D) Max. (W)1.0¥ Semiconductor MaterialSilicon Package StylePin

Contextual Info: L4856B Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.9.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage90 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W)5.0¥ Semiconductor MaterialSilicon Package StylePin

Contextual Info: L4824 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.3p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage24 Q Factor Min. f(co) Min. (Hz) Cut-off freq.2.5G P(D) Max. (W)5.0¥ Semiconductor MaterialSilicon Package StylePin

Contextual Info: V23990-P629-L48-PM V23990-P629-L48Y-PM V23990-P629-L49-PM V23990-P629-L49Y-PM datasheet flow BOOST 0 1200 V / 40 A Features flow 0 housing ● High efficiency dual boost ● Ultra fast switching frequency ● Low Inductance Layout ● 1200V IGBT and 1200V SiC diode

Contextual Info: SHARP GL480/G L480Q/G L483Q Infrared Emitting Diode GL480/GL480Q GL483Q • Features 1. Narrow beam angle A0 : TYP. ± 13“ 2. Radiant flux ( e : MIN. 0.7m W at I f = 20m A ) 3. Compact, high reliability by chip coating (GL480Q/GL483Q) 4. Long lead type (GL483Q)

L4821A

Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

L4821A

Abstract: SPD10S30 A101 SIDC03D30SIC2
Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior

Contextual Info: Preliminary SIDC03D30SIC2 Silicon Carbide Schottky Diode FEATURES: Applications: • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior