DIODE L2N Search Results
DIODE L2N Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE L2N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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marking L2
Abstract: 2SC2412K le2m
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OCR Scan |
2sc2412k50ma/5ma100mhz100ma+2 | |
GW 9n
Abstract: FS75R12W2T4
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fs75r12w2t4gw 9n | |
FF600R12IS4FContextual Info: Technische Information / technical information FF600R12IS4F IGBT-Module IGBT-modules PrimePACK 2 Modul mit schnellem IGBT2 und SiC Diode für hochfrequentes Schalten und NTC PrimePACK™2 module with fast IGBT2 and SiC Diode for high frequency switching and NTC |
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ff600r12is4f | |
aeg vde 0435
Abstract: oki relay aeg thyristors aeg diode Si 61 L 240V AC/48v output rectifiers circuit diagrams
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cms-ui60-uid-33161haeg vde 0435oki relay+3 | |
L2N600Contextual Info: LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS ON , Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Parameter |
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l2n600 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS ON , Vgs@10V, Ids@1A = 3.8Ω We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N60 Electrical Characteristics Parameter |
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l2n60 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G S-L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring |
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l2n7002wt1gs-l2n7002wt1gaec-q101sc-70+2 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 380 mAmps, 60 Volts L2N7002KLT1G S-L2N7002KLT1G N–Channel SOT–23 3 Features • • • • • ESD Protected Low RDS on Surface Mount Package This is a Pb−Free Device • S- Prefix for Automotive and Other Applications Requiring |
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l2n7002klt1gs-l2n7002klt1gaec-q101ot-23 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 380 mAmps, 60 Volts L2N7002KLT1G S-L2N7002KLT1G N–Channel SOT–23 3 Features • • • • • • ESD Protected Low RDS on Surface Mount Package This is a Pb−Free Device 1 2 We declare that the material of product are Halogen Free and |
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l2n7002klt1gs-l2n7002klt1gaec-q101236ab+1 | |
AA115 diodeContextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR |
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l2n7002lt1236abaa115 diode | |
marking 702 sot23Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N–Channel SOT–23 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.) |
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l2n7002lt1236abmarking 702 sot23 | |
RG 702 Diode
Abstract: 702 SOT-23 marking 702 MARKING CODE 702 702 marking code RG 702 L2N7002LT1 L2N7002LT1G SOT23-3 702
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l2n7002lt1236abrg 702 diode702 sot-23+6 | |
L2N7002M3T5GContextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002M3T5G S-L2N7002M3T5G N–Channel SOT–723 3 • Pb−Free Package is Available. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 |
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l2n7002m3t5gs-l2n7002m3t5gaec-q101ot-723 | |
sot 23 70.2
Abstract: L2N7002LT1G marking 702 sot23 702 sot 23 L2N7002LT1G SOT-23
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l2n7002lt1g236abot-23sot 23 70.2+3 | |
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transistor 6c x
Abstract: marking code 6c marking 6C
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l2n7002wt1gtransistor 6c xmarking code 6cmarking 6c | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ |
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l2n7002wt1gsc-70 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G S-L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring |
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l2n7002wt1gs-l2n7002wt1gaec-q101sc-70 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002SLT1G N–Channel SOT–23 3 • We declare that the material of product compliance with RoHS requirements. 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 |
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l2n7002slt1g236ab195mm150mm+5 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G N–Channel SC–74 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage |
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l2n7002dmt1g195mm150mm10reel/inner+5 | |
l2n7002dw1t1g
Abstract: CASE 419B-02 sot363 ON Marking DS
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l2n7002dw1t1gsc-88195mm150mm+7 | |
sot88
Abstract: 419B-02
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l2n7002dw1t1g/t3g195mm150mm3000pcs/reel+7 | |
L2N7002DW1T1GContextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFEO 115 mAmps, 60 Volts N–Channel SOT–363 L2N7002DW1T1G/T3G • Pb−Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR |
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l2n7002dw1t1g/t3g195mm150mm3000pcs/reel+6 | |
702 sotContextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 |
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l2n7002lt1g236ab195mm150mm+6 | |
L2N7002DWContextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G S-L2N7002DW1T1G N–Channel SC-88 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring |
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l2n7002dw1t1gs-l2n7002dw1t1gsc-88aec-q101+6 | |