DIODE L2 32 DIODE Search Results

DI 156 S

Abstract: KA206 THY 101 S2614 kc202e k*206
Contextual Info: SCR/Diode Modules IGBT Presspacks Stacks Outlines Accessories Explanations 52 KA 20.X-V 91 115 91(115) Anschluß an Stromschienen muß elastisch erfolgen. 29(41) 45 (.) für Bauelemente s=26 Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)

BYT08P-400

Abstract: BYT08PI-400
Contextual Info: BYT08P-400 BYT08PI-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 400 V VF (max) 1.4 V trr (max) 35 ns A A FEATURES AND BENEFITS • ■ ■ ■ K K VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING

BYW51-200

Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
Contextual Info: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES

STPR1020CB

Abstract: 1E 5W STPR1020CT STPR1020CB-TR STPR1020CF STPR1020CFP STPR1020CG STPR1020CR diode k 0368
Contextual Info: STPR1020CB/CG/CT/CF/CFP/CR ULTRA-FAST RECOVERY RECTIFIER DIODES A1 MAIN PRODUCTS CHARACTERISTICS K IF AV 2x5A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) A2 A1 30 ns • ■ ■ ■ A2 SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY

BYT08P-400

Contextual Info: BYT08P-400 BYT08PI-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 400 V VF (max) 1.4 V trr (max) 35 ns ) s ( ct du A FEATURES AND BENEFITS • ■ ■ ■ K VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING

RBO08-40G

Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
Contextual Info: RBO08-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.

IXFH18N90P

Abstract: ixfh18n90 IXFV18N90P IXFV18N90PS PLUS220SMD 18n90
Contextual Info: PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS VDSS ID25 = = ≤ ≤ RDS on trr 900V 18A Ω 600mΩ 300ns TO-247 (IXFH) G D D (TAB) S TO-268 (IXFT) Symbol Test Conditions

STB9NK60ZD

Contextual Info: STP9NK60ZD - STF9NK60ZD STB9NK60ZD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET TARGET DATA TYPE STP9NK60ZD STF9NK60ZD STB9NK60ZD • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.95 Ω < 0.95 Ω < 0.95 Ω

schaffner ri 229 pc

Abstract: Schaffner it 245 Schaffner NSG 510 RBO40-40G RBO40-40M RBO40-40T VF13 load dump pulse Schaffner load dump generator diode ir31
Contextual Info: RBO40-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES PROTECTION AGAINST "LOAD DUMP" PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.

IXFH22N50P

Abstract: 22N50 22N50P IXFV22N50P IXFV22N50PS PLUS220SMD DS9935
Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFV22N50P IXFV22N50PS IXFH22N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 500V 22A Ω 270mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions VDSS TJ = 25°C to 150°C 500

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

GEZ DIODE

Abstract: GEZ 26 2-KD20 "Temperature Switch" 2kd20 Diode KD 202 KD 310 Diode KD 6 17 gez 8.5 diode 54kd
Contextual Info: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 54 KD 20.X-V . für Bauelemente s=26 103 (127) Anschluß an Stromschienen muß elastisch erfolgen. 103 (127) Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)

36n50P

Abstract: ISOPLUS247
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFC 36N50P IXFR 36N50P VDSS ID25 = = RDS on ≤ ≤ trr (Electrically Isolated Back Surface) 500 18 190 250 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol

Contextual Info: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description Six N- and P-channel MOSFET pairs Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds

DMV1500M

Abstract: IR 92 0151 DMV1500M7 DMV1500M7F5
Contextual Info: DMV1500M7 DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 700 V 1500 V trr (max) 55 ns 135 ns VF (max) 1.55 V 1.65 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)

IR 92 0151

Abstract: DMV1500M DMV1500MF5
Contextual Info: DMV1500M DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V trr (max) 50 ns 135 ns VF (max) 1.4 V 1.65 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)

DMV1500H

Abstract: DMV1500HF5
Contextual Info: DMV1500H DAMPER + MODULATION DIODE FOR VIDEO DAMPER MODULATION MAIN PRODUCT CHARACTERISTICS MODUL DAMPER IF AV 3A 6A VRRM 600 V 1500 V trr (max) 50 ns 125 ns VF (max) 1.4 V 1.7 V 1 2 3 1 • ■ ■ ■ ■ ■ ■ 3 Insulated TO-220AB (Bending option F5 available)

ld1014d

Abstract: Lovoltech pn diode POWERJFET
Contextual Info: PWRLITE LD1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description ™ ™ ™ ™ ™ ™ ™ The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low

STGFL6NC60DI

Abstract: STGDL6NC60DI STGBL6NC60DI STGPL6NC60DI F2 Series STGBL6NC60DIT4 C5056 15536
Contextual Info: STGBL6NC60DI, STGDL6NC60DI STGFL6NC60DI, STGPL6NC60DI 6 A, 600 V hyper fast IGBT Features • Low CRES / CIES ratio no cross-conduction susceptibility ■ Very high frequency operation ■ 3 1 Very soft ultrafast recovery antiparallel diode 3 2 1 TO-220FP

FQP60N03L

Abstract: 533B 600B AB-11 MBRD835L RC5058 c 9647
Contextual Info: Application Note 9014 July, 2000 Fairchild QFET for Synchronous Rectification DC to DC Converters by K.S. Oh 1. Introduction Fairchild is currently developing and marketing a new QFET series that has improved RDS on , gate charge, and switching speed characteristics. The superior features of these QFETs are

plus220smd

Abstract: 36N50P IXFH36N50P
Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N50P IXFT 36N50P IXFV 36N50P IXFV 36N50PS N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode VDSS ID25 = 500 V = 36 A Ω = 170 mΩ RDS on TO-247 AD (IXFH) (TAB) Symbol Test Conditions

Contextual Info: DMV56  DAMPER + MODULATION DIODE FOR VIDEO MAIN PRODUCT CHARACTERISTICS DAMPER MODUL DAMPER IF AV 6A 6A VRRM 600 V 1500 V trr 50 ns 135 ns VF (max) 1.5 V 1.5 V 1 1 MODULATION 2 3 3 2 TO-220I (Bending option F5 available) FEATURES AND BENEFITS FULLKITIN ONE PACKAGE

Contextual Info: DATA SHEET SKY12210-478LF: 0.9 to 4.0 GHz, 100 W High Power Silicon PIN Diode SPDT Switch Applications ANT • Transmit/receive switching and failsafe switching in TD-SCDMA, WiMAX, and LTE base stations  Transmit/receive switching in land mobile radios and military

BYT16P-400

Contextual Info: BYT16P-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS I f a v 16 A V rrm 400 V V f (max) 1.4 V trr (max) 35 ns A 2 •— K N .— FEATURES AND BENEFITS ■ VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITCHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING