DIODE L2 32 DIODE Search Results

DI 156 S

Abstract: KA206 THY 101 S2614 kc202e k*206
Contextual Info: SCR/Diode Modules IGBT Presspacks Stacks Outlines Accessories Explanations 52 KA 20.X-V 91 115 91(115) Anschluß an Stromschienen muß elastisch erfolgen. 29(41) 45 (.) für Bauelemente s=26 Anzahl Thy./Di. Typ L1 L2 6 (s=14mm) 4 (s=14mm) 2 (s=14mm) 6 (s=26mm)

CON at36a

Abstract: AT36A DIODE d2 DIODE A4 STEVAL-ISV004V2 DIODE d3 D1 diode 026l2 STEVAL-IS DSASW003737
Contextual Info: 5 4 TP1 3 2 VIN V_OUT C13 4.7uF D3 DIODE VIN 1 V_OUT C12 4.7uF C6 4.7uF TEST POINT VCC D2 C5 D4 1uF TRISIL TEST POINT V_OUT D1 DIODE 1 1 TP2 C11 1uF D5 TRISIL DIODE TP3 1 D CB1 C1 22nF VIN CB3 L1 C3 22nF L3 47uH VIN 47uH L3 2 2 VIN V_OUT L1 D TEST POINT J35

50A ZENER

Abstract: 32V zener E50A37VPS alternator diode 50a alternator diode
Contextual Info: SEMICONDUCTOR E50A37VPS, E50A37VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES E Average Forward Current : IO=50A. Zener Voltage : 37V Typ. L2 F1 POLARITY E50A37VPR (+ Type) (- Type) B L1 G E50A37VPS

E30A37VPR

Abstract: E30A37VPS
Contextual Info: SEMICONDUCTOR E30A37VPS, E30A37VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=30A. E L2 Zener Voltage : 37V Typ. F1 POLARITY E30A37VPR (+ Type) (- Type) B L1 G E30A37VPS

Contextual Info: STTH1602C HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV Up to 2 x 10A A1 VRRM 200 V A2 Tj (max) 175 °C VF (typ) 0.78 V trr (typ) 21 ns K FEATURES AND BENEFITS • ■ ■ ■ ■ ■ A2 Suited for SMPS Low losses Low forward and reverse recovery times

BYT08P-400

Abstract: BYT08PI-400
Contextual Info: BYT08P-400 BYT08PI-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 400 V VF (max) 1.4 V trr (max) 35 ns A A FEATURES AND BENEFITS • ■ ■ ■ K K VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING

BYW51-200

Abstract: BYW51F-200 BYW51FP-200 BYW51G-200 BYW51R-200
Contextual Info: BYW51/F/G/FP/R-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 2 x 10 A VRRM 200 V Tj (max) 150 °C VF (max) 0.85 V trr (max) 25 ns A1 K A2 A2 K A1 TO-220FPAB BYW51FP-200 FEATURES AND BENEFITS SUITED FOR SMPS VERY LOW FORWARD LOSSES

Contextual Info: STTH1002C HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF AV Up to 2 x 8A A1 VRRM 200 V A2 Tj (max) 175 °C VF (typ) 0.78 V trr (typ) 20 ns K A2 FEATURES AND BENEFITS • ■ ■ ■ ■ ■ A1 A2 K A1 I2PAK STTH1002CR TO-220AB STTH1002CT

STPR1020CB

Abstract: 1E 5W STPR1020CT STPR1020CB-TR STPR1020CF STPR1020CFP STPR1020CG STPR1020CR diode k 0368
Contextual Info: STPR1020CB/CG/CT/CF/CFP/CR ULTRA-FAST RECOVERY RECTIFIER DIODES A1 MAIN PRODUCTS CHARACTERISTICS K IF AV 2x5A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) A2 A1 30 ns • ■ ■ ■ A2 SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY

BYT08P-400

Contextual Info: BYT08P-400 BYT08PI-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 400 V VF (max) 1.4 V trr (max) 35 ns ) s ( ct du A FEATURES AND BENEFITS • ■ ■ ■ K VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING

AOT-2015

Abstract: taiyo 88-R high current converter circuit diagram LT3497 2-4 Wire converter 24v ballast ELECTRONIC dimming BALLAST g14 DIODE schottky marking high power white led driver circuit diagram white led driver
Contextual Info: LT3497 Dual Full Function White LED Driver with Integrated Schottky Diodes DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Drives Up to 12 White LEDs 6 in Series per Converter from a 3V Supply Two Independent Boost Converters Capable of

Contextual Info: LT3497 Dual Full Function White LED Driver with Integrated Schottky Diodes DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Drives Up to 12 White LEDs 6 in Series per Converter from a 3V Supply Two Independent Boost Converters Capable of

BYT16P-400

Abstract: BYT16P400 BYT16P
Contextual Info: BYT16P-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS A1 IF AV 16 A VRRM 400 V VF (max) 1.4 V trr (max) 35 ns K A2 K FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING A1 K A2 TO-220AB

RBO08-40G

Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
Contextual Info: RBO08-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.

IXFH18N90P

Abstract: ixfh18n90 IXFV18N90P IXFV18N90PS PLUS220SMD 18n90
Contextual Info: PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS VDSS ID25 = = ≤ ≤ RDS on trr 900V 18A Ω 600mΩ 300ns TO-247 (IXFH) G D D (TAB) S TO-268 (IXFT) Symbol Test Conditions

IXFV18N90P

Abstract: ixfh18n90 ixfh18n90p
Contextual Info: IXFH18N90P IXFT18N90P IXFV18N90P IXFV18N90PS PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 = = ≤ ≤ RDS on trr 900V 18A Ω 600mΩ 300ns TO-247 (IXFH) G D D (TAB) S TO-268 (IXFT) Symbol Test Conditions

STB9NK60ZD

Contextual Info: STP9NK60ZD - STF9NK60ZD STB9NK60ZD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET TARGET DATA TYPE STP9NK60ZD STF9NK60ZD STB9NK60ZD • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.95 Ω < 0.95 Ω < 0.95 Ω

BYT16P-400

Contextual Info: BYT16P-400 FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS A1 IF AV 16 A VRRM 400 V VF (max) 1.4 V trr (max) 35 ns K ) s ( ct A2 K u d o r P e FEATURES AND BENEFITS VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING

schaffner ri 229 pc

Abstract: Schaffner it 245 Schaffner NSG 510 RBO40-40G RBO40-40M RBO40-40T VF13 load dump pulse Schaffner load dump generator diode ir31
Contextual Info: RBO40-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES PROTECTION AGAINST "LOAD DUMP" PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.

p9nk60z

Abstract: schematic diagram Electronic Ballast HID STB9NK60ZFD STB9NK60ZFDT4 STF9NK60ZFD STP9NK60ZFD p9nk60zfd F9NK60
Contextual Info: STP9NK60ZFD - STF9NK60ZFD STB9NK60ZFD N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET TARGET DATA TYPE STP9NK60ZFD STF9NK60ZFD STB9NK60ZFD • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.95 Ω < 0.95 Ω

STPSC20H065C

Abstract: STPSC20H065CW diode 1.e
Contextual Info: STPSC20H065C 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability A1 1

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet  production data Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Dedicated to PFC applications ■ High forward surge capability A K K

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFV22N50P IXFV22N50PS IXFH22N50P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 500V 22A Ω 270mΩ 200ns PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C