DIODE L2 Search Results

DD3752

Contextual Info: L2E D NEC • bM275ES DD37521 b02 H N E C E LASER DIODE ELECTRONICS INC / NDL5070 1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE PULSED LASER DIODE DESCRIPTION NDL5070 is a 1550 nm pulsed laser diode especially designed fo r optical measurement equipment OTDR . The DC PBH

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

MDD 42-12-N1

Contextual Info: a s e a BRO üJN/ABB s e m i c o n Netz-Dioden-Module A3 D I GDMfl3Dfl □ □ □ D l ñ S T jp» •= 1 J - Diode Modules for mains frequency Daten pro D iode/data per diode /le s caractéristiques se rapportent à 1 diode I frms V rhm Ifavm l2t 10 ms

alternator diode

Abstract: alternator diode 50a E50A2CPS
Contextual Info: SEMICONDUCTOR E50A2CPS, E50A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=50A. E L2 Reverse Voltage : 200V Min. F1 L1 G POLARITY E50A2CPS (+ Type) B E50A2CPR (- Type)

alternator diode 35a 9

Abstract: alternator diode alternator diode 35a
Contextual Info: SEMICONDUCTOR E35A2CPS, E35A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=35A. E Reverse Voltage : 200V Min. L2 F1 E35A2CPS (+ Type) L1 G POLARITY B E35A2CPR (- Type)

E30A37VPR

Abstract: E30A37VPS
Contextual Info: SEMICONDUCTOR E30A37VPS, E30A37VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=30A. E L2 Zener Voltage : 37V Typ. F1 POLARITY E30A37VPR (+ Type) (- Type) B L1 G E30A37VPS

E30A2CPR

Abstract: E30A2CPS
Contextual Info: SEMICONDUCTOR E30A2CPS, E30A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=30A. Reverse Voltage : 200V Min. POLARITY L2 E F1 E30A2CPS (+ Type) B L1 G E30A2CPR (- Type)

alternator diode

Abstract: zener diode f2 zener 1.7v F2 ZENER DIODE alternator diode 35a E35A21VPS
Contextual Info: SEMICONDUCTOR E35A21VPS, E35A21VPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=35A. E Zener Voltage : 21V Typ. L2 F1 POLARITY E35A21VPS (+ Type) B L1 G E35A21VPR (- Type)

MMBD4148M

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate DIODE MMBD4148M SWITCHING DIODE WBFBP-03B TOP DESCRIPTION Epitaxial planar Silicon diode 1.2x1.2×0.5 unit: mm + - 1. ANODE FEATURES Fast Switching Speed Ultra-Small Surface Mount Package

Contextual Info: STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: STPSC8TH13TI Dual 650 V power Schottky silicon carbide diode in series Datasheet - production data Description 1 The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Diode WBFBP-03B RB715Z 1.2x1.2×0.5 unit: mm Schottky barrier diode DESCRIPTION Epitaxial planar type Silicon diode TOP + 1. ANODE - 2. ANODE 3.CATHODE FEATURES: Extra small power mold type.

DS4231

Contextual Info: M ITEL DSF21060SV Fast Recovery Diode SEMICONDUCTOR Supersedes O ctober 1995 version, DS4231 - 2.2 DS4231 - 2.3 APPLICATIONS • Freewheel Diode. ■ A ntiparallel Diode. ■ Inverters. ■ C hoppers. March 1998 KEY PARAMETERS v RRM 6000V 1690A J f AV

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Diode WBFBP-03B DAN222M 1.2x1.2×0.5 unit: mm SWITCHING DIODE DESCRIPTION Epitaxial planar Silicon diode TOP + 1. ANODE + - 2. ANODE 3.CATHODE BACK FEATURES: High speed. (trr=1.5ns Typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Diode WBFBP-03A DAN222E 1.6x1.6×0.5 unit: mm SWITCHING DIODE DESCRIPTION Epitaxial planar Silicon diode TOP + 1. ANODE + - 2. ANODE 3.CATHODE BACK FEATURES: High speed. (trr=1.5ns Typ.)

STPSC806D

Abstract: JESD97
Contextual Info: STPSC806D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

STPSC806

Abstract: STPSC806D
Contextual Info: STPSC806 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

JESD97

Abstract: STPSC1006D
Contextual Info: STPSC1006D 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power

STPSC1006D

Contextual Info: STPSC1006 600 V power Schottky silicon carbide diode Features • No or negligible reverse recovery ■ Switching behavior independent of temperature ■ Particularly suitable in PFC boost diode function A Description K The SiC diode is an ultrahigh performance power