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    DIODE KU 105 D Search Results

    DIODE KU 105 D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ12V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet
    CEZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet

    DIODE KU 105 D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5 pin relay 12vdc

    Abstract: UF3-230VAC1 5 pin relay 12vdc 250VAC kuhnke relay UF3 24vdc kuhnke relay 24vdc Relays with single Changeover kuhnke uf3 24VDC relay UF3-230VAC relay SPCO 12V coil UF3-24VDC1
    Contextual Info: Relays - Plug in TYCO SCHRACK The XT series relays are a new generation of plug in relays featuring a clear case and extra strong pins for greater mechanical strength. Also features a manual test lever as standard and a sensitive 400mW coil with built in led indication and suppression diode. Suitable for RT series


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    400mW 400mW 27E129 20C249 5 pin relay 12vdc UF3-230VAC1 5 pin relay 12vdc 250VAC kuhnke relay UF3 24vdc kuhnke relay 24vdc Relays with single Changeover kuhnke uf3 24VDC relay UF3-230VAC relay SPCO 12V coil UF3-24VDC1 PDF

    y-349 diode

    Abstract: dmf6106 radar detector 10.5 ghz local oscillator DMF-6106 MF68 Alpha Industries Detector Diodes DIODE 349
    Contextual Info: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ED A lpha DMB, DMC, DMF Series Features • Bonded Junctions for Reliability ■ Low 1/f Noise ■ Low Turn On for Starved L.O. Applications ■ Planar Passivated Dice for Reliability ■ Uniform Characteristics


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    a5090d

    Abstract: A5090 A4072 x band diode detector waveguide 1N358A JAN 1N1611AR
    Contextual Info: Silicon Point Contact Detector Diodes Features • ■ Broadband Operation Bias Not Required Ml Description Matched Pairs Alpha’s point contact detector diodes are designed for applications through mm-band 60.0 GHz . These diodes employ epitaxial silicon optimized for high tan­


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    PDF

    Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS High Power Diode Laser Bars 940 nm, 160 W cw JDL-BAB-50-47-940-TE-160-3.5 Features: Applications: m High laser power m /TLOHMFNERNKHC RS@SDK@RDQR@MCÆADQK@RDQR


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    JDL-BAB-50-47-940-TE-160-3 PDF

    dual coil latching relay kul

    Abstract: dual coil latching relay spdt
    Contextual Info: Catalog 1308242 Issued 3-03 P&B KUL series 10 Amp Magnetic Latching Relay File E22575 File 15734 Users should thoroughly review the technical data before selecting a product part number. It is recommended that users also seek out the pertinent approvals files of the agencies/laboratories and review them to ensure the product meets


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    E22575 -5A15S-120 -11A15S-24 1N4007 dual coil latching relay kul dual coil latching relay spdt PDF

    KUL-5A15S-120

    Abstract: KUL-11D15S-24 KUL-11A15S-120 KUL-11A15S-24 KUL-11D15D-12 KUL-11D15D-24 KUL11D15S-12
    Contextual Info: Catalog 1308242 Issued 3-03 P&B KUL series 10 Amp Magnetic Latching Relay File E22575 File 15734 Users should thoroughly review the technical data before selecting a product part number. It is recommended that users also seek out the pertinent approvals files of the agencies/laboratories and review them to ensure the product meets


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    E22575 KUL-5A15S-120 KUL-11A15S-24 1N4007 KUL-5A15S-120 KUL-11D15S-24 KUL-11A15S-120 KUL-11A15S-24 KUL-11D15D-12 KUL-11D15D-24 KUL11D15S-12 PDF

    035N06P

    Abstract: 035N06
    Contextual Info: SEMICONDUCTOR KU035N06P TECHNICAL DATA N-ch Trench MOS FET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,


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    KU035N06P Fig14. Fig15. Fig16. 035N06P 035N06 PDF

    047N08P

    Abstract: 047N08
    Contextual Info: SEMICONDUCTOR KU047N08P TECHNICAL DATA N-ch Trench MOS FET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,


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    KU047N08P Fig14. Fig15. Fig16. 047N08P 047N08 PDF

    B1545

    Abstract: b1535 b1545 motorola MBR1545CT MOTOROLA transistor B1545 MBR1545CT MBR1535CT b1545 diode 221A B1545 mot
    Contextual Info: MOTOROLA Order this document by MBR1535CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR1535CT MBR1545CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:


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    MBR1535CT/D MBR1535CT MBR1545CT MBR1545CT B1545 b1535 b1545 motorola MBR1545CT MOTOROLA transistor B1545 MBR1535CT b1545 diode 221A B1545 mot PDF

    B1545P

    Abstract: b1545 MBR1545CTP
    Contextual Info: MBR1545CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • Center–Tap Configuration Guardring for Stress Protection


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    MBR1545CTP B1545P r14525 MBR1545CTP/D B1545P b1545 MBR1545CTP PDF

    RL-100H

    Abstract: 2SK1244 f3v5 K1244 2SK124
    Contextual Info: VXV y - / W - MOSFET X VX Series Pow er MOSFET 2SK1244 v f^ E I OUTLINE DIMENSIONS F3V50 500V 3A • A • 7 ^ Ä (C is s ) ^ A ò 'ì lU • A C 1O O V ^ À * ; W i v ^ V ^ B à g •Ë4& & RATINGS Absolute Maximum Ratings m B 9k lE ^ f Item Symbol ft


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    2SK1244 CF3V50) O-220 -K1244 RL-100H 2SK1244 f3v5 K1244 2SK124 PDF

    Contextual Info: /S T SGS-THOMSON ^ 7 # M (g ^ (S [Ì ÌK @ R i© Ì ULQ2802AH iÄ S U LQ 2804A U LQ 2805A EIGHT DARLINGTON ARRAYS EIGHT DARLINGTONS PER PACKAGE EXTENDED TEM PERATURE RANGE ( - 40 to 105°C) OUTPUT CURRENT TO 500 mA OUTPUT VOLTAGE TO 50 V INTEGRAL SUPPRESSION DIODES


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    ULQ2801A-ULQ2805A ULQ2802A) LQ2801 LQ2802A-U LQ2803A-ULQ2804A-U LQ2805A ULQ2804A) ULQ2803A) ULQ2805A) PDF

    Relay schrack Rt78626

    Abstract: KR-11DGE-24 khs 313 RT876 relay s 1420 156 724 KRPA-11AG-120 KR-11DGE-12 KBP 2060 203d1 krpa 11dy control relay
    Contextual Info: Catalog 1308242 Issued 3-03 PDF Rev. 4-04 PLUG-IN / PANEL MOUNT RELAYS Alphanumeric Index Series Type Page 0419 . Relay w/Dust Cover . 745 Circuit Breakers . 101-124 1 Transformers. 201-212


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    40G432 24A110 27E893 Relay schrack Rt78626 KR-11DGE-24 khs 313 RT876 relay s 1420 156 724 KRPA-11AG-120 KR-11DGE-12 KBP 2060 203d1 krpa 11dy control relay PDF

    310N10P

    Abstract: KU310N10
    Contextual Info: SEMICONDUCTOR KU310N10P TECHNICAL DATA N-ch Trench MOS FET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,


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    KU310N10P Fig14. Fig15. Fig16. 310N10P KU310N10 PDF

    2N2222 motorola

    Abstract: B3045 340F-03 motorola 2n2222 MBR3045WT
    Contextual Info: MOTOROLA Order this document by MBR3045WT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBR3045WT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Motorola Preferred Device


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    MBR3045WT/D MBR3045WT 2N2222 motorola B3045 340F-03 motorola 2n2222 MBR3045WT PDF

    MBR3045PT motorola

    Abstract: B3045 2N2222 motorola motorola 2n2222 MOTOROLA 2N6277 motorola diode device data DIODE 638 MOTOROLA MBR3045PT-D 2N6277 applications MOTOROLA 2n2222 plastic
    Contextual Info: MOTOROLA Order this document by MBR3045PT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifier MBR3045PT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Motorola Preferred Device


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    MBR3045PT/D MBR3045PT MBR3045PT motorola B3045 2N2222 motorola motorola 2n2222 MOTOROLA 2N6277 motorola diode device data DIODE 638 MOTOROLA MBR3045PT-D 2N6277 applications MOTOROLA 2n2222 plastic PDF

    GEX 51 DIODE

    Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
    Contextual Info: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage


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    C5DB02 GEX 51 DIODE Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG PDF

    B4015LG

    Abstract: diode code yw B4015L MBR4015CTL MBR4015CTLG marking code YW DIODE
    Contextual Info: MBR4015CTL SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • • • • • • • http://onsemi.com Center−Tap Configuration Guardring for Stress Protection


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    MBR4015CTL MBR4015CTL/D B4015LG diode code yw B4015L MBR4015CTL MBR4015CTLG marking code YW DIODE PDF

    Contextual Info: H V X - I - > U - X / W -M O S F E T HVX-n SERIES POWER MOSFET O U TL IN E DIM ENSIONS 2SK2670 F5S90H V X2 900v 5a Lead type is available. I Æ fê ü RATINGS Absolute Maximum Ratings ii Item a y- h ‘ G a t e ‘ S o u rc e Voltage Ku -f y 150 ”C dss


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    2SK2670 F5S90H F5S90HVX2) 00053m PDF

    2n6277 pin out diagram

    Abstract: 2N6277 applications 1N5817 2N2222 2N6277 MBR3045PT MBR3045PTG
    Contextual Info: MBR3045PT Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 may be Connected for •


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    MBR3045PT MBR3045PT/D 2n6277 pin out diagram 2N6277 applications 1N5817 2N2222 2N6277 MBR3045PT MBR3045PTG PDF

    sps transistor

    Abstract: SMPS TRANSFORMER AN4105 SMPS Transformer 12V KA34063 KA3842 ka3842b equivalent "voltage regulator handbook" fairchild PC817 opto 4 pin fairchild flyback design
    Contextual Info: www.fairchildsemi.com Application Note AN4105 Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch SPS in a Flyback Converter Introduction modulation (PWM) based control IC in one package. Moreover, they provide enhanced IC functionality, thereby


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    AN4105 sps transistor SMPS TRANSFORMER AN4105 SMPS Transformer 12V KA34063 KA3842 ka3842b equivalent "voltage regulator handbook" fairchild PC817 opto 4 pin fairchild flyback design PDF

    B3045

    Abstract: 1N5817 2N2222 2N6277 MBR3045PT
    Contextual Info: MBR3045PT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Dual Diode Construction — Terminals 1 and 3 may be Connected for


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    MBR3045PT r14525 MBR3045PT/D B3045 1N5817 2N2222 2N6277 MBR3045PT PDF

    pc817 fairchild

    Abstract: smps transformer Design smps transformer pc817 Ringing Choke Converter isolated feedback flyback converter switching power supply transformer construction KA34063 fairchild flyback design SMPS Transformer 12V ic ka3842b
    Contextual Info: www.fairchildsemi.com Application Note AN4105 Design Considerations for Switched Mode Power Supplies Using A Fairchild Power Switch FPS in a Flyback Converter Introduction modulation (PWM) based control IC in one package. Moreover, they provide enhanced IC functionality, thereby


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    AN4105 pc817 fairchild smps transformer Design smps transformer pc817 Ringing Choke Converter isolated feedback flyback converter switching power supply transformer construction KA34063 fairchild flyback design SMPS Transformer 12V ic ka3842b PDF

    Contextual Info: MOTOROLA Order this document by MTP35N06ZL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP35N06ZL HDTMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 35 AMPERES 60 VOLTS RDS on = 26 mΩ This advanced high voltage TMOS E–FET is designed to


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    MTP35N06ZL/D MTP35N06ZL MTP35N06ZL/D* PDF