DIODE KE 01 Search Results

KE DIODE ON

Abstract: diode KE KE-01 diode KE 01
Contextual Info: G = 20 kg KE 02 G = 21 kg 228 225 198 160 110 225 188 110 160 9 13.5 13.5 KE 01 228 274 277 68 9 40 240 380 261 300 128 361 300 240 380 17 96 9 9 110 9 249 294 301 249 294 301 59 IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations

diode KE

Abstract: 274 transistor KE-01 diode KE 01 DATASHEET SCR ke on module scr scr datasheet igbt scr applications
Contextual Info: G = 20 kg KE 02 G = 21 kg 228 225 198 160 110 225 188 110 160 9 13.5 13.5 KE 01 228 274 277 68 9 40 240 380 261 300 128 361 300 240 380 17 96 9 9 110 9 249 294 301 249 294 301 59 IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations

C10X

Contextual Info: SKN 26 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ 3 X22 [22 0C22 0X22 3 X22 [22 0C22 0X22 =HM3 V CR M A 6:Z 0[2 ¥] ;7 V 022 ¥OI >BG C1^2X >B$ C1^2X >BG C1^2[ >B$ C1^2[ >BG C1^0C >B$ C1^0C >BG C1^0X >B$ C1^0X 0122 0122 >BG C1^01 SKR 26

display 1620

Abstract: digital TUNING FM RADIO RECEIVER single phase automatic change diagram Seven Transistor Array PNP TUNING FM RADIO RECEIVER LED display 7 segment FIP6E6 FM receiver integrated circuit automatic tune am radio station block diagram pj 899 diode
Contextual Info: MOS DIGITAL INTEGRATED CIRCUIT jut P D 1 7 0 3 C -0 1 3 P H A S E L O C K E D L O O P F R E Q U E N C Y S Y N T H E S IZ E R F M /A M D IG IT A L T U N IN G S Y S T E M C O N T R O L L E R C M O S LSI T he jjP D 1 7 03 C -013 is a single c h ip CM O S c o n tro lle r designed fo r using as a Phase Lo cked L o o p

kuka

Abstract: kd202 GEZ DIODE D5014 KA206 KA204 THY H 75 B 80 GEZ 44 A diode T5726 KE02
Contextual Info: kuka-2006-de-inhalt.qxd 07.02.2006 12:17 Uhr Seite 70 Outlines Heatsinks May 2006 01 K 1.1 - M 12 G = 0,635 kg K 0.55 - FB 54 - A G = 1,760 kg K0.55 - M 12 K0.55 - M 24 x 1,5 G = 1,760 kg G = 1,760 kg 113 11 15 M8 39 135 135 2 39 2 100 96 1 25 120 50 M24x1.5

Contextual Info: SK 50 MLI 066 Absolute Maximum Ratings Symbol Conditions IGBT 45, 6 ! 6 . :;1 2 !=>  . 01 23        . 01 2 IGBT Module SK 50 MLI 066  899 4 1; $  . ;9 2 <1 $ :99 $ ? 09 4 !=>. 0  ! 4 . 89 4@ 4"5 A 09 4@ 45, B 899 4 Units

Contextual Info: SK 50 MLI 066 Absolute Maximum Ratings Symbol Conditions IGBT 45, 6 ! 6 . :;1 2 !=>  . 01 23        . 01 2 899 4 1; $  . ;9 2 <1 $ :99 $ ? 09 4 !=>. 0  !  4 . 89 4@ 4"5 A 09 4@ 45, B 899 4 Units  . 01 2 4"5, SEMITOP 3

Contextual Info: SK 50 MLI 066 Absolute Maximum Ratings Symbol Conditions IGBT 45, 6 ! 6 . :;1 2 !=>  . 01 23        . 01 2 899 4 1; $  . ;9 2 <1 $ :99 $ ? 09 4 !=>. 0  ! IGBT Module SK 50 MLI 066  4 . 89 4@ 4"5 A 09 4@ 45, B 899 4 Units

IR Emitters

Contextual Info: OD-880F HIGH-POWER GaAIAs IR EMITTERS .030 .040 FEATURES • Three times the power output of GaAs IR emitters • High reliability liquid-phase epitaxially grown GaAIAs • 880 nm peak emission for optimum matching with silicon detectors .015 1.00 MIN. " f

pj 899 diode

Abstract: UPD6320G MPD6321 UPD6321G PD6320G 701-c iPD6321 UPB553AC UPD6321 JUPD6320G
Contextual Info: M O S INTEGRATED C IR C U IT ju P D 1 7 0 1 C - 0 1 5 PLL F R E Q U E N C Y S Y N T H E S IZ E R A N D C O N T R O L L E R FO R F M A N D A M R A D IO The /JPD1701C-015 is a CMOS LSI w ith b u ilt-in PLL synthesizer capable of receiving F M /A M in U.S.A. and

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details B07D034BB2-0120 Product Details Military/Aerospace High Performance Relays

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details B07D934BB2-0119 Product Details Military/Aerospace High Performance Relays

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details B07D992BE2-0132 Product Details Military/Aerospace High Performance Relays

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details B07D992BD2-0127 Product Details Military/Aerospace High Performance Relays

Contextual Info: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details B07D034BA2-0125 Product Details Military/Aerospace High Performance Relays

A26 diode

Abstract: SD-50 Rectifier Diode
Contextual Info: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung

KE DIODE ON

Abstract: 1N6275A 1.5KE 15A diode 1.5 ke 200a KE 75 DIODE KE 16A DIODE KE 15A code diode KE KE 10A DIODE diode KE 1N6302A 1.5KE 180A
Contextual Info: 600 AND 1500 WATT UNIPOLAR TRANSIENT SUPPRESSOR CELL SUSSEX TM SEMICONDUCTOR, INC. 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 • TEL: 239 768-6800 • FAX: (239) 768-6868 GLASS PASSIVATED UNIPOLAR TRANSIENT SUPPRESSOR CELL 600 AND 1500 WATT MAXIMUM POWER HANDLING

4709

Abstract: KE-01 8000D
Contextual Info: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung

A26 diode

Abstract: 4709N
Contextual Info: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung

A26 diode

Abstract: diode A26
Contextual Info: Technische Information / Technical Information Netz Gleichrichterdiode Rectifier Diode D 4709 N 20.28 N Elektrische Eigenschaften / Electrical properties Vorläufige Daten Höchstzulässige Werte / Maximum rated values Preliminary Data Periodische Spitzensperrspannung

st 339

Abstract: st339 diode 937 ke SLOTTED OPTICAL SWITCH for C3 937 ke ST1131-11 KE 34A
Contextual Info: SLOTTED OPTICAL SWITCH op fiE L tm yics H21A1/2/3 SVM BQi MiUIMETERS MAX. MIN. •D 1 - S I ±y _ ^ 3 *1 SECTION X - X~T~ LEAD PROFILE ST?339*01 INCHES MIN, A W .7 11.0 ,422 433 A- 3.0 a? 119 .125 At 3.0 32 .113 125 <8*> b, .SCO .750 .50 NOM. .024 ,030

VRE405

Abstract: VRE405AD VRE405AS VRE405BD VRE405BS VRE405CD VRE405CS
Contextual Info: VRE405 VRE405 P r o d u c t IInnnnoovvaa t i o n FFr roomm Precision Dual Voltage Reference Features DESCRIPTION The VRE405 is a low cost, high precision, ±5 V reference. Available in 14-pin DIP or SMT packages, the device is ideal for new designs that need a high performance reference.

Contextual Info: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

H0A1882

Abstract: A1882
Contextual Info: H0A1882 Transmissive Sensor DESCRIPTION The HOA1882 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1882-011, -012 or photodarlington (HOA1882-013) encased in a black IR transmissive thermoplastic housing. Detector switching takes place