DIODE K72 Search Results

K7252M

Abstract: BA582 BC848 SW01 smd 2a 3 PIN saw tv if filters 200KC
Contextual Info: Switchable Filter K7252 Application Notes Author: Updated: Department: Fröhlich 24.4.98 OFW E UE Abstract: K7252M features two separate modes in a single SIP5K package: A D/K,B/G channel, predistorted group delay, or a M/N channel with flat group delay optimized

mosfet k72

Abstract: k72 diode K72 marking diode k72 mosfet I-S115 marking K72
Contextual Info: 2N7002W Mosfet N-Channel SOT-323 1. GATE 2. SOURCE 3. DRAIN Features — High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability — — — Marking: K72 Dimensions in inches and (millimeters)

AEC-Q100 optocoupler

Abstract: K72T
Contextual Info: ACPL-K71T, ACPL-K72T, ACPL-K74T and ACPL-K75T Automotive High Speed Low Power Digital Optocouplers with R2CouplerTM Isolation and AEC-Q100 Grade 1 Qualification Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

2N7002KW

Abstract: MosFET
Contextual Info: 2N7002KW 115mA , 60V, RDS ON 4  N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES         SOT-323 RDS(ON), VGS@10V, IDS@500mA=3

2N7002K

Abstract: MosFET
Contextual Info: 2N7002K 0.3A , 60V , RDS ON 4  N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES         SOT-23 RDS(ON), VGS@10V, IDS@500mA=3

IXGP70N33

Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim

k72 diode

Abstract: mosfet k72 K72 sot k72 transistor transistor k72 702 marking code transistor marking k72 k72 device marking marking k72 2N7002W
Contextual Info: 2N7002W 115 mAMPS, 60VOLTS, RDS on =7.5 Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free N–Channel SOT–323 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)

LT2N7002E

Abstract: code k72 k72 diode mosfet k72 LT2N7002
Contextual Info: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density , DMOS ● Small Package Outline trench technology. This high density process is especially tailored to

Marking Code k72

Abstract: k72 diode K72 marking diode K72 MARKING SOT-23
Contextual Info: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density, DMOS ● Small Package Outline trench technology. This high density process is especially tailored to

Marking Code k72

Abstract: code k72 k72 diode K72 marking diode LT2N7002D
Contextual Info: LT2N7002D N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002D is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density , DMOS ● Small Package Outline trench technology. This high density process is especially tailored to

LPC 836 red laser diode

Abstract: LPC 826 red laser diode CN802 PWB 826 service manual transistor N14 193 K2EEYB000001 CN603 DL3U21518AAA toshiba dvd hdd schematic diagram ic 804
Contextual Info: ORDER NO. CPD0603050C1 Notebook Computer CF-74 This is the Service Manual for the following areas. M …for U.S.A. and Canada Model No. CF-74CCBAXBM 2006 Matsushita Electric Industrial Co., Ltd. All rights reserved. Unauthorized copying and distribution is a violation of law.

mosfet k72

Abstract: Marking Code k72 k72 diode LT2N7002E k72 sot 23 code k72 N-channel Power MOSFET
Contextual Info: LT2N7002E N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002E is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density, DMOS ● Small Package Outline trench technology. This high density process is especially tailored to

JESD22-A108C

Abstract: JESD22-A108-C JESD22A-101-B
Contextual Info: Formosa MS N-Channel MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2

Contextual Info: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

k72 diode

Abstract: mosfet k72 K72 marking diode DS30120 Rev. 14
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 0.23A • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002DW SOT-363 SOT-363 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET N-Channel SOT-523 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002DW SOT-363 SOT-363 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2N7002W MOSFET N-Channel SOT-323 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET N-Channel SOT-523 FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002DW SOT-363 SOT-363 MOSFET N-Channel FEATURES z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability