DIODE K6 Search Results

diode

Abstract: DD400S17K6CB2
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

diode

Abstract: DD400S17K6CB2
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

IR module

Abstract: DD400S17K6CB2
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

diode 1700v

Abstract: eupec igbt DIODE i2t DD400S17K6CB2 b2 diode DIODE B2 igbtmodules emcon diode
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules DD 400 S 17 K6C B2 1700V Dual Dioden Modul mit softer EmCon Diode 1700V Dual Diode Module with soft EmCon Diode Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung

A5 DIODE

Abstract: A6 DIODE DIODE A6 A4 diode k6 diode k1 diode A3 DIODE S12 MARKING DIODE K4 diode KSD-D5H003-000
Contextual Info: ND102M6L Semiconductor Antenna Switching Diode Array 6 in 1 Features • 6 channel 1 package type Antenna Switching Diode Array • Low capacitance : Max.0.35pF • Low series resistance : rs= 1.1Ω(Typ.)@IF=10mA • GSM Mobile ASM/FEM Module RF Switch Applications [ Triple-Band Switching Diode ]

Contextual Info: 660nm Coaxial Packaged Diode Laser K66S03F-0.01W K66S03F-0.02W K66S03F-0.06W K66S03F-0.10W Key Features： Š 10-100mW output power Š 105µm fiber core diameter Š 0.22NA Š 660nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 635nm Coaxial Packaged Diode Laser K63S03F-0.002W K63S03F-0.005W K63S03F-0.015W K63S03F-0 .03W Key Features： Š 2mW-30mW output power Š 105µm fiber core diameter Š 0.22NA Š 635nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

VUB120-16NO2

Abstract: marking ntc 80
Contextual Info: VUB 120 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.1 V

VUB160-16NOX

Contextual Info: VUB 160 Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = IC80 2.7 V IFSM = 1100 A IFSM = 200 A = 125 A VCEsat = 2.2 V

VUB120-16NOX

Contextual Info: VUB 120 Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = IC80 2.7 V IFSM = 1100 A IFSM = 200 A = 100 A VCEsat = 2.1 V

160-16NO2T

Abstract: VUB160-16NO2 160-12NO2 VUB160-16No2t E72873 VUB160-12NO2 marking ntc 160 vub16016no2 VUB160-16
Contextual Info: VUB 160 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.2 V

160-16NO2T

Abstract: VUB160-16NO2 VUB160-16NOX
Contextual Info: VUB 160 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.2 V

VUB120-16NO2

Abstract: 120-12NO2 120-16NO2T VUB120-12NO2 12016N vub120-16NO2t E72873 Ultrafast Recovery Rectifier Bridge VUB 120 120-16NO2
Contextual Info: VUB 120 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Preliminary data Fast Recov. Diode IGBT VRRM = 1200 V VCES = 1200 V 1600 V VCES = 1200 V IDAVM = 188 A VF = 2.7 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.1 V

Contextual Info: 660nm Coaxial Packaged SM Diode Laser K66S03F-0.005W-S K66S03F-0.03W-S K66S03F-0.05W-S Key Features： Š 5-50mW output power Š 4µm fiber core diameter Š 0.13NA Š 660nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

SMA 905 fiber dimensions

Abstract: K66S03F-0 laser diode 660nm 0005W
Contextual Info: 660nm Coaxial Packaged SM Diode Laser K66S03F-0.005W-S K66S03F- 0.015W-S K66S03F-0.03W -S K66S03F-0.05W -S Key Features： Š 5-50mW output power Š 4µm fiber core diameter Š 0.13NA Š 660nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 660nm HHL Packaged SM Diode Laser K66S06F-0.050W-S K66S06F-0.080W-S Key Features： Š 660nm wavelength Š 50mW, 80mW output power Š 4µm fiber core diameter Š 0.13NA Š Singlemode Fiber Applications： Š Printing Š Biochemical Analysis Š Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 660nm HHL Packaged SM Diode Laser K66S06F-0.050W-S K66S06F-0.080W-S Key Features： Š 660nm wavelength Š 50mW, 80mW output power Š 4µm fiber core diameter Š 0.13NA Š Singlemode Fiber Applications： Š Printing Š Biochemical Analysis Š Scientific BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 635nm Coaxial Packaged SM Diode Laser K63S03F-0.001W-S K63S03F-0.002W-S K63S03F-0.01W-S K63S03F-0.02W-S Key Features： Š 1-20mW output power Š 4µm fiber core diameter Š 0.13NA Š 635nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

Contextual Info: 635nm Coaxial Packaged SM Diode Laser K63S03F-0.001W-S K63S03F-0.002W-S K63S03F-0.01W-S K63S03F-0.02W-S Key Features： Š 1-20mW output power Š 4µm fiber core diameter Š 0.13NA Š 635nm wavelength Applications： Š Printing Š Aiming beam BWT Beijing’s High Power Diode Laser Modules are manufactured by

DDB6U75N16YR

Contextual Info: Technische Information / technical information DDB6U75N16YR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! $ 1 0 30 0 % ; " #$ % # &' 01 # $ 2% 0 3 0 0

DDB2U30N08VR

Contextual Info: Technische Information / technical information DDB2U30N08VR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! "# $ " &' *+, 12 % " # 3$ 1 4 1 1 # 2 1 41 1

Contextual Info: Technische Information / technical information DDB6U75N16YR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! $ 1 0 30 0 % ; " #$ % # &' 01 # $ 2% 0 3 0 0

Contextual Info: Technische Information / technical information FF450R12ME3 IGBT-Module IGBT-modules EconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL™ module with trench/fieldstop IGBT3 and EmCon High Efficiency diode IGBT-Wechselrichter / IGBT-inverter