DIODE IR 132 E Search Results

MOSFET IRF150

Abstract: IRF150 MOSFET HA711
Contextual Info: HE 0 I 4055452 DGtnObb 5 | T-39-13 Data Sheet No. PD-9.305G I N T E R N A T IO N A L R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IOR IRF15Ü IRF151 IRF15S -Channel IRF153 Features: 100 Volt, 0.055 Ohm H EXFET The HEXFET technology is the key to International

5LC20U

Contextual Info: □ - □ 3 . Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D5LC20UR 200V 5A r n y 't'X > trr35n s >SRS;H >^BsOAw0, ^ miBs FA RATINGS Absolute Maximum Ratings a i s E-fS ym bo l Conditions a Item Storage Temperature Operating Junction Temperature

IRF150R

Abstract: IRF151R IRF152R IRF153R
Contextual Info: Rugged Power MOSFETs. File Num ber 2002 IR F150R , IR F15 1 R , IR F 152R , IR F153R Avalanche Energy Rated N-Channel Power MOSFETs 3 3 A an d 4 0 A , 6 0 V -1 0 0 V ros on = 0 .0 5 5 0 an d 0 .0 8 fi N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

UL1385

Abstract: IRKL1 IRK.L1 D243 D244 D245 NSD245 70Dir
Contextual Info: International S Rectifier SERIES IRK.L131/132 FAST RECOVERY DIODES NEW INT-A-pak Power Modules Features • ■ ■ ■ ■ ■ ■ ■ 140A Fast recovery tim e characteristics E lectrica lly isolated base plate Industrial standard package S im plified m echanical designs,

Contextual Info: 5 /a s /h *- AUT' S H ^ - h Schottky Barrier Diode OUTLINE DIMENSIONS DE10SC4 Package I E i'ivO Standard soldering pad 40 V 10 A : ±o.i Tolerance: ±0.1 •S M D 0.5±al • T jl5 0 ° C # P rrsm ^ t j y 'j I f fiti • im - x m z a m m 0.1±al m m • S R S ÎÜ

IRF162

Abstract: IRF152 IRF161 IRF163 IRF150 1RF16 circuits of IRF150 MOSFET IRF150 IRF151 IRF153
Contextual Info: Standard Power MOSFETs File Number 1»24 IRF150, IRF151, IRF152, IRF153 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 33 A and 40 A, 60 V - 100 V rDs on = 0.055 Ct and 0.08 Ci N -C H A N N E L E N H A N C E M E N T M O D E

missile seeker

Abstract: varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band
Contextual Info: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM 30 J — 'V 3 El ~ r ■ ■ ■ ■ AVAILABLE IN CERAMIC PACKAGES CUSTOM DESIGNS AVAILABLE LOW POST TUNING DRIFT FREQUENCY RANGE VHF —

DE10SC4

Contextual Info: SHINDENGEN Schottky Rectifiers SBD DE10SC4 Dual OUTLINE DIMENSIONS Case : E-pack Unit : mm 40V 10A FEATURES SMT Tj150 PRRSM avalanche guaranteed High current capacity with Small Package APPLICATION Switching power supply DC/DC converter Home Appliances, Office Equipment

DE10SC4

Contextual Info: SHINDENGEN Schottky Rectifiers SBD DE10SC4 Dual OUTLINE DIMENSIONS Case : E-pack Unit : mm 40V 10A FEATURES ● SMT ● Tj150℃ ● PRRSM ● High avalanche guaranteed current capacity with Small Package APPLICATION ● Switching power supply ● DC/DC converter

diode sy 171 10

Abstract: diode sy 170/10
Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast BYV40 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated high efficiency dual rectifier diodes in a plastic envelope suitable for surface mounting, featuring low forward voltage drop,

Contextual Info: Philips Semiconductors Product specification Rectifier diodes * BYV40E series ultrafast, rugged_ _ GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, rugged dual rectifier diodes in a plastic envelope

AAAZ

Contextual Info: TOSHIBA {D ISCR ET E/OPTO} Ti 9097250 TOSHIBA DISCRETE/OPTO //osh'thu DE'I ^ 7 2 5 0 0Qlfe,77b fc, T 99D 16776 DTS^-IS TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 1 5 2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA ( 7T-M0S I ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Contextual Info: National Semiconductor MICROCIRCUIT DATA SHEET Original Creation Date: 11/07/96 Last Update Date: 03/17/97 Last Major Revision Date: 11/07/96 MNLMl 13-2 -X R E V 1A0 REFERENCE DIODE General Description The LM113 is a temperature compensated, low voltage reference diode.

Contextual Info: 4684955 I T T SEMICONDUCTORS fl7 DE|4t.fi415S D O D E B E T 0 | SCHOTTKY DIODES, BIDIRECTIONAL ZENER DIODES r - o i -o*î ' T-JhS>3 ' Silicon Schottky Barrier Diodes in DO-35 Package for general purpose applications with low forward voltage drop and very fast switching times.

10VTZ

Contextual Info: Schottky Barrier Diode Twin Diode mtm DF10SC6 O UTLINE U n it-m m Package : STO-220 W e igh t 1.5g T y p u^háLÍ°-(M) 10.2 60 V 10A Feature * SMD < SM D ' T j= 1 5 0 °C 1 Tj= 150°C 1P rrs m 1 P rrs m R ating Main Use >X ' f ' y 1S w itc h in g R egulator

SF30JC10

Contextual Info: Schottky Barrier Diode Twin Diode W tm SF30JC10 O U TLIN E 100V 30A Feature • Tj=150°C • Tj=150°C • • Full Molded 7 [Æ -JU K • fîlR=1.0mA • Low Ir=1.0 itiA • if & f lÆ S Ê ê C U C C U • Resistance for thermal run-away • Dielectric Strength 2kV

LD33A

Contextual Info: TOSHIBA MSE » DISCRETE/OPTO TOSHIBA FIELD EFFECT TRANSISTOR • TDR7ES0 7 «TOSM - YTFP152 SILICON N CHANNEL MOS TYPE (ir - MOSI) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATION Unit in mni CHOPPER REGULATOR, DC_DC CONVERTER AND MOTOR

"MARKING CODE A8*"

Abstract: transistor A82 CMPD2003 CMPD2004 CMPD2004S A82 MARKING CODE
Contextual Info: Central CMPD2003 CMPD2004 CMPD2004S TM Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2004, CMPD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.

d 132 smd diode

Contextual Info: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 DF20JC10 Unit-mm Weight 1.5g Typ 10.2 100V 20A Feature • SMD • <SlR=0.7mA • SMD • S iy R T È Î E iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG

EIGHT MOSFET ARRAY

Abstract: 200v 100mA mosfet DIG-130 EIGHT n-channel MOSFET ARRAY
Contextual Info: 31E D DIONICS INC B EÖMÖÖOM 0GQ03ÛÔ M B S D 10 7=V/-?3 HIGH SPEED PHOTOVOLTAIC N-CHANNEL MOSFET-DRIVER* DIG-130 DIG-131 DIG-132 65 RUSHMORE STREET, WESTBURY, NEW YORK 11590 516 997-7474 TWX 510*222*0974 FEATURES * OPTICALLY VOLTAGE * LOW POWER * EIGHT PIN

Contextual Info: Super Fast Recovery Diode Twin Diode Wtm D5LC20U OUTLINE 200V 5A Feature •m s'ix • • • L o w N oise trr=35ns 7 [Æ - J U K • trr= 3 5 n s • Full M o ld e d Main Use • S w itc h in g R eg u lator • Fly W heel • ÌM .0 A J M 3 • H om e A p p lia n c e , O ffice A u to m a tio n , Lig h tin g

ld20u

Abstract: 5ld20u
Contextual Info: Super Fast Recovery Diode Twin Diode Wtm D5LD20U OUTLINE 200V 5A Feature • m s 'ix • L o w N oise • trr=35ns • trr= 3 5 n s • 7 [Æ - J U K • Full M o ld e d Main Use • S w itc h in g R eg u lator • Fly W heel • 8 < B , O A , PsBfl •

10SC4

Contextual Info: Schottky Barrier Diode Twin Diode l ^ t l l OUTLINE Package : E-pack DE10SC4 Unit: mm Weight 0.326tf Typ 4 0 V 10 A Feature G6 • SM D • SMD • P rrsm 7 ' K 5 > î / x (SSE • Prrsm Rating Type wo I H igh lo R a tin g -S m a ll-P K G 10SC4 p -/Hü»XM

Contextual Info: Central CMPD2003 CMPD2004 CMPD2004S Sem iconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2003, CMPD2004, CM PD2004S types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high voltage capability.