DIODE IR Search Results

ZLLS400

Abstract: IR610 ZHCS400 ZLLS400TA ZLLS400TC
Contextual Info: ZLLS400 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 0.52A; IR = 10 A DESCRIPTION This compact SOD323 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low

Contextual Info: DSA300I45NA preliminary Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Backside: Isolated 2 1 3 4 Features / Advantages: Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour

transistor c 2335

Abstract: C-150 IRFI840G IRGIB15B60KD1
Contextual Info: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

420 Diode

Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
Contextual Info: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

diode 10a 400v

Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
Contextual Info: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor irf 645

Abstract: diode 400v 2A ultrafast AN-994 C-150 IRFR120 IRFU120 IRGR3B60KD2 R120 all transistor IRF 310 RG3250
Contextual Info: PD - 94601A IRGR3B60KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRGIB6B60KD ANSI PD-94427D
Contextual Info: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

transistor BR 9013

Abstract: C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source
Contextual Info: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

800v irf

Abstract: IGBT 900V 80A ir igbt 1200V 40A IRF 725 IRGP8B120KD-E 40A vp
Contextual Info: PD - 94386A IRGP8B120KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

diode 30a 400v

Abstract: 12V 30A diode 1085 CT 600v 30a IGBT C-150 IRGP30B60KD-E
Contextual Info: PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.

IRGB10B60KD

Abstract: C-150 IRF1010 IRF530S IRGS10B60KD IRGSL10B60KD IRL3103L
Contextual Info: PD - 94382C IRGB10B60KD IRGS10B60KD IRGSL10B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: DSS6-0045AS V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 45 V 6A 0.50 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values

Contextual Info: DSS17-06CR V RRM = I FAV = VF = Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Single Diode 600 V 17 A 2.71 V Part number 3 1 Backside: isolated Applications: Features / Advantages: Very low Vf Extremely low switching losses low Irm values

C-150

Abstract: IRF530S IRGB6B60KD IRGS6B60KD IRGSL6B60KD transistor* igbt 70A 300 V
Contextual Info: PD - 94381E IRGB6B60KD IRGS6B60KD IRGSL6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: SSTDPAD100 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Siliconix SSTDPAD100 The SSTDPAD100 is a low leakage Monolithic Dual Pico-Amp Diode The SSTDPAD100 low-leakage monolithic dual diode provides a superior alternative to conventional diode

ID101 diode

Contextual Info: ID101 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil ID101 The ID101 is a low leakage Monolithic Dual Pico-Amp Diode The ID101 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology

Contextual Info: BAV70-V Vishay Semiconductors Small Signal Switching Diode, Dual Features • Silicon epitaxial planar diode • Fast switching dual diode with common cathode • This diode is also available in other configurations including:a dual common anode to cathode with type designation

Contextual Info: 1N4151W-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Fast switching diode • This diode is also available in other case styles including the DO-35 case with the type designation 1N4151, and the

OP265

Abstract: OP265AA OP265AB OP265AC OP265AD OP505 OP535
Contextual Info: Plastic Infrared Emitting Diode OP265AA Series Features: • • • • • T-1 3 mm package style Narrow irradiance pattern Dome lens Higher power output than GaAs at equivalent drive currents 850 nm diode Description: Each device in the OP265AA series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is

BAP51-02

Abstract: smd diode S4 diode S4 05 AS 15 f
Contextual Info: LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP51 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79

DIODE S4 74

Abstract: BAP50 BAP50-02 diode DB 3 C
Contextual Info: General purpose PIN diode BAP50 – 02 FEATURES • Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 1 2 SOD523 SC-79 1 CATHODE 2 ANODE

Contextual Info: 1N4448 Small-Signal Diode Reverse Voltage 100V Forward Current 150mA DO-204AH DO-35 Glass Features • Silicon Epitaxial Planar Diode • Fast switching diode. • This diode is also available in other case styles including the SOD-123 case with the type

Contextual Info: BAV70-V www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES • Silicon Epitaxial Planar Diode 3 1 • Fast switching dual diode with common cathode 2 18108 • This diode is also available in other configurations including: a dual with type

BAP50LX

Abstract: SMD MARKING CODE M 4 Diode
Contextual Info: BAP50LX Silicon PIN diode Rev. 01 — 17 July 2007 Product data sheet 1. Product profile 1.1 General description General purpose PIN diode in a SOD882T leadless ultra small plastic SMD package. 1.2 Features • Low diode capacitance ■ Low diode forward resistance