DIODE IN 4002 Search Results

Contextual Info: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency

100C1295

Abstract: DSW480
Contextual Info: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 270 DAICO INDUSTRIES

DSWM5

Contextual Info: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 320 DAICO INDUSTRIES

T161-160

Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Contextual Info: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.

Contextual Info: SIEMENS SFH400 SFH401 SFH402 GaAs INFRARED EMITTER • Half Angle - SFH400, ±6° - SFH401, ±15° - SFH402, ±40° • GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process • Emits Radiation in Near Infrared Range • Cathode Electrically Connected to

1N4148

Abstract: IN4148W 1N4148 sod123 DIODE 1N4148 package SO thermal diode 1n4148 1n4148 mark 1N4148W 1R SOD-123 DIODE 1N4148 characteristics 1N4148 Fast Switching Diode
Contextual Info: 1N4148, 1N4148W Silicon Epitaxial Planar Diode fast switching diodes. Packages -D O -3 5 1N4148 - SO D -123 ( IN 4 148W) -Cathode Mark DO-35 G lass Case Weight approx. 0.13 g Dimensions in mm in 1 J 1 min.0.25 3 SOD-123 Plastic Package Weight approx. 0.01 g

Contextual Info: UF4001G – UF4007G 1.0A GLASS PASSIVATED ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency

SIDC01D120H6

Contextual Info: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:

A001

Abstract: SIDC01D120H6
Contextual Info: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:

Contextual Info: UF4001 – UF4007 1.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

SIDC01D120H6

Contextual Info: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:

Contextual Info: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:

4002P

Contextual Info: Standard Forming Axial type diode They are asked to place order such 4002P 5 as com bination 1st and 2nd code. [ U n it : m m ] Standard Forming Single In-line Package Bridge Diodes Note 1. S tick type m agazine is available on code No.4101 Note 2 Stick type m agazine is available on code N o.4103

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

PS2381

Abstract: GB8898-2001 PS2381-1 GB4943-2001 PS2381-1Y-V-F3-AX GB8898 CQC10001041058 CQC10001041059 EN60747-5-2 VDE0884
Contextual Info: DATA SHEET PHOTOCOUPLER PS2381-1 4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C −NEPOC Series− DESCRIPTION The PS2381-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic 4-LSOP Long Mini-Flat Small Outline Package for high density applications.

PS2861B-1Y-F3

Abstract: EN60747-5-2 PS2861B-1 VDE0884 100TA PS2861b
Contextual Info: PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package

PS2381-1Y-V-AX

Contextual Info: DATA SHEET PHOTOCOUPLER PS2381-1 4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C −NEPOC Series− DESCRIPTION The PS2381-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic 4-LSOP Long Mini-Flat Small Outline Package for high density applications.

NEC 2703

Abstract: High Density Mounting Type Photocoupler
Contextual Info: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package

PS2861B-1

Abstract: NEC 2703 PS2861b EN60747-5-2 VDE0884 PS2861B-1Y-V-F3
Contextual Info: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package

Contextual Info: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

transistor KSP 13 801

Abstract: C2 KNR 1A daewoo cj 4002Y DAEWOO LCD display 1602 LC018 daewoo lcd power supply LED display for radio radio fm lcd
Contextual Info: \ PMC 4002 CMOS LSI C PLL FREQUENCY SYNTHESIZER AND CONTROLLER FOR FM / MW / LW TUNER The DMC 4002 is CMOS LSI chips developed for world-wide FM / MW / LW tuning with PLL frequency synthesizer system. The DMC 4002 can make a compact and high performance FM / MW / LW tuner with clock function for high-end car stereo,

IRF540 p-channel MOSFET

Abstract: of IRF9540 and IRF540 IRF540 p-channel MOSFET pin out Max6495 6-TDFN-EP M1IRF540 12061C104KAT2A MOSFET IRF540 CMPZ5248B MAX6495 SMBJ54A
Contextual Info: 19-4002; Rev 2; 12/06 MAX6495 Evaluation Kit The MAX6495 evaluation kit EV kit demonstrates a high-voltage overvoltage protection circuit for automotive applications that must survive load dump and highvoltage transient conditions. This EV kit is a fully assembled and tested surface-mount board.

Contextual Info: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.