DIODE IN 4002 Search Results

Contextual Info: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency

Contextual Info: SIEMENS SFH400 SFH401 SFH402 GaAs INFRARED EMITTER • Half Angle - SFH400, ±6° - SFH401, ±15° - SFH402, ±40° • GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process • Emits Radiation in Near Infrared Range • Cathode Electrically Connected to

SIDC01D120H6

Contextual Info: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:

A001

Abstract: SIDC01D120H6
Contextual Info: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:

PS2381

Abstract: PS2381-1 GB8898 GB8898-2001 GB4943-2001 CQC10001041058 CQC10001041059 EN60747-5-2 VDE0884 PS2381-1Y-V-F3-AX
Contextual Info: PHOTOCOUPLER PS2381-1 4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C −NEPOC Series− DESCRIPTION The PS2381-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic 4-LSOP Long Mini-Flat Small Outline Package for high density applications.

PS2381

Abstract: GB8898-2001 PS2381-1 GB4943-2001 PS2381-1Y-V-F3-AX GB8898 CQC10001041058 CQC10001041059 EN60747-5-2 VDE0884
Contextual Info: DATA SHEET PHOTOCOUPLER PS2381-1 4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C −NEPOC Series− DESCRIPTION The PS2381-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic 4-LSOP Long Mini-Flat Small Outline Package for high density applications.

PS2861B-1Y-F3

Abstract: EN60747-5-2 PS2861B-1 VDE0884 100TA PS2861b
Contextual Info: PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package

NEC 2703

Abstract: High Density Mounting Type Photocoupler
Contextual Info: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package

PS2861B-1

Abstract: NEC 2703 PS2861b EN60747-5-2 VDE0884 PS2861B-1Y-V-F3
Contextual Info: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package

Contextual Info: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.

Contextual Info: mS I P S 7 y vv ^ 3 -K N o . Hi Single In-line Package Bridge Diodes 4002 4001 ode No. m< ~ k Short Lead S1VBO S1VBDZ S1VBAD D2SBD D2SBAn D2SBDL D3SBD D3SBDZ D3SBAD D4SBD D4SBDZ D 4SBOL D4SBSO D10XBD DlOXBdH L'Type Lead Outside Kink •iL t l 4rM416,244 1.

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

Mullard Mullard quick reference guide

Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
Contextual Info: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)

ES51981

Contextual Info: ES51981 3 1/2 AUTO DMM Features Description • 2000 count display ES51981 is an integrated analog-to-digital Converter ADC with 2000 counts LCD display ,automatic range selection, and 3V DC power supply. Automatic range selection is provided for voltage(AC/DC)

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

Contextual Info: ES51983 3 3/4 AUTO DMM Features Description • 4000 count display • 40MHz Frequency counter ES51983 is an integrated analog-to-digital Converter ADC with 4000 counts LCD display ,automatic range selection, and 3V DC power supply. Automatic range selection is provided for voltage(AC/DC)

Contextual Info: ES51981 3 1/2 AUTO DMM Features Description • 2000 count display ES51981 is an integrated analog-to-digital Converter ADC with 2000 counts LCD display ,automatic range selection, and 3V DC power supply. Automatic range selection is provided for voltage(AC/DC)

XR2288CP

Abstract: exar 2284 man seven-segment display block diagram of 7 segment IC PLASMA XR-2284 2284cp
Contextual Info: Z * EX4R XR-2284/2288 High-Voltage AC Plasma Display Drivers FUN C TIO NAL BLOCK DIAGRAMS G EN ER A L DESCRIPTION The XR-2284 and the XR-2288 are high voltage display driver arrays especially designed for interfacing with ac plasma display systems. The XR-2284 contains four in­

class d amplifier schematic hip4080

Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
Contextual Info: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an

HIP4080 amplifier circuit diagram class D

Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
Contextual Info: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an

class d amplifier schematic hip4080

Abstract: HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V HIP2060 MO-169AB
Contextual Info: TM No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an

roland m dc1

Abstract: D11/diode LP sd capacitor 226 35K 022 electrolytic PFC inductor 600UH SRW42EC AND8124 EER28 BOBBIN ece 5th sem OREGA smt HBD853
Contextual Info: HBD853/D Rev. 2, Aug-2004 Power Factor Correction Handbook Power Factor Correction PFC Handbook Choosing the Right Power Factor Controller Solution HBD853/D Rev. 2, Aug−2004  SCILLC, 2004 “All Rights Reserved” For additional information on Power Factor Correction, contact the Technical Information Center at

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS