DIODE IN 4002 Search Results

Contextual Info: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency

100C1295

Abstract: DSW480
Contextual Info: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 270 DAICO INDUSTRIES

DSWM5

Contextual Info: Microwave Integrated Circuit Switches • GaAs, PIN Diode, & Schottky Diode Technology • Thin-Film MIC Technology • Plug In DIP Style Packages • Flatpack Packages • Connectorized Packages • Full Military Screening Available See Page 320 DAICO INDUSTRIES

Contextual Info: SIEMENS SFH400 SFH401 SFH402 GaAs INFRARED EMITTER • Half Angle - SFH400, ±6° - SFH401, ±15° - SFH402, ±40° • GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process • Emits Radiation in Near Infrared Range • Cathode Electrically Connected to

1N4148

Abstract: IN4148W 1N4148 sod123 DIODE 1N4148 package SO thermal diode 1n4148 1n4148 mark 1N4148W 1R SOD-123 DIODE 1N4148 characteristics 1N4148 Fast Switching Diode
Contextual Info: 1N4148, 1N4148W Silicon Epitaxial Planar Diode fast switching diodes. Packages -D O -3 5 1N4148 - SO D -123 ( IN 4 148W) -Cathode Mark DO-35 G lass Case Weight approx. 0.13 g Dimensions in mm in 1 J 1 min.0.25 3 SOD-123 Plastic Package Weight approx. 0.01 g

Contextual Info: UF4001G – UF4007G 1.0A GLASS PASSIVATED ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency

SIDC01D120H6

Contextual Info: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:

A001

Abstract: SIDC01D120H6
Contextual Info: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:

Contextual Info: UF4001 – UF4007 1.0A ULTRAFAST DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Surge Current Capability High Reliability Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

SIDC01D120H6

Contextual Info: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:

Contextual Info: Preliminary SIDC01D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC01D120H6 1200V IF 0.6A A This chip is used for:

4002P

Contextual Info: Standard Forming Axial type diode They are asked to place order such 4002P 5 as com bination 1st and 2nd code. [ U n it : m m ] Standard Forming Single In-line Package Bridge Diodes Note 1. S tick type m agazine is available on code No.4101 Note 2 Stick type m agazine is available on code N o.4103

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

PS2381

Abstract: PS2381-1 GB8898 GB8898-2001 GB4943-2001 CQC10001041058 CQC10001041059 EN60747-5-2 VDE0884 PS2381-1Y-V-F3-AX
Contextual Info: PHOTOCOUPLER PS2381-1 4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C −NEPOC Series− DESCRIPTION The PS2381-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic 4-LSOP Long Mini-Flat Small Outline Package for high density applications.

PS2861B-1Y-F3

Abstract: EN60747-5-2 PS2861B-1 VDE0884 100TA PS2861b
Contextual Info: PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package

PS2381-1Y-V-AX

Contextual Info: DATA SHEET PHOTOCOUPLER PS2381-1 4-PIN LSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 115°C −NEPOC Series− DESCRIPTION The PS2381-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. This package is mounted in a plastic 4-LSOP Long Mini-Flat Small Outline Package for high density applications.

NEC 2703

Abstract: High Density Mounting Type Photocoupler
Contextual Info: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package

PS2861B-1

Abstract: NEC 2703 PS2861b EN60747-5-2 VDE0884 PS2861B-1Y-V-F3
Contextual Info: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package

Contextual Info: DATA SHEET PHOTOCOUPLER PS2861B-1 4-PIN SSOP PHOTOCOUPLER OPERATING AMBIENT TEMPERATURE 110°C −NEPOC Series− DESCRIPTION The PS2861B-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The package has a shield effect to cut off ambient light, and is mounted in a Shrink SOP Small Outline Package

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

transistor KSP 13 801

Abstract: C2 KNR 1A daewoo cj 4002Y DAEWOO LCD display 1602 LC018 daewoo lcd power supply LED display for radio radio fm lcd
Contextual Info: \ PMC 4002 CMOS LSI C PLL FREQUENCY SYNTHESIZER AND CONTROLLER FOR FM / MW / LW TUNER The DMC 4002 is CMOS LSI chips developed for world-wide FM / MW / LW tuning with PLL frequency synthesizer system. The DMC 4002 can make a compact and high performance FM / MW / LW tuner with clock function for high-end car stereo,

Contextual Info: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.

Contextual Info: mS I P S 7 y vv ^ 3 -K N o . Hi Single In-line Package Bridge Diodes 4002 4001 ode No. m< ~ k Short Lead S1VBO S1VBDZ S1VBAD D2SBD D2SBAn D2SBDL D3SBD D3SBDZ D3SBAD D4SBD D4SBDZ D 4SBOL D4SBSO D10XBD DlOXBdH L'Type Lead Outside Kink •iL t l 4rM416,244 1.

Diode IN 5404

Abstract: diode in 5401 IN 4004 diodes DIODE IN 4002 4002 diode DIODE 4004 diode IN 4004 5401 diode diode N 4007 KDA 1.2
Contextual Info: HERRMANN T ^ O I-1 5 KG 4SE J> m 443bS7S 0000123 3 • HRfIN Drahtdioden Lead mounted diodes Diodes à fils Diodentyp V T ype o f d io d e rrm V BR If a v Type de diode 4001 4002 4003 4004 4005 4006 4007 1N 5400 5401 5402 5403 5404 5405 5406 5407 5408 R 250-A