DIODE IN 34A Search Results
DIODE IN 34A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 |
|
Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 |
|
Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 |
|
Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 |
|
Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 |
|
Zener Diode, 5.6 V, ESC | Datasheet |
DIODE IN 34A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
035H
Abstract: IRFPE30
|
Original |
irg4pc30fdpbfo-247acirfpe30035h | |
035H
Abstract: IRFPE30
|
Original |
irg4pc30fdpbfo-247acirfpe30035h | |
IRF1010 E DATASHEET
Abstract: IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC
|
Original |
irg4bc30fd120khzo-220abchar10+6 | |
swiching transistor
Abstract: 9561 600v 8A ultra fast recovery diode to220
|
Original |
irg4bc30fd1pbf20khzo-220abminimi10+5 | |
|
Contextual Info: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter |
Original |
5614airg4bc30fd1pbf20khzo-220ab+1 | |
|
Contextual Info: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter |
Original |
irg4bc30fd120khzo-220abfd100h06a5+1 | |
IRF1010
Abstract: IRG4BC30FD1 TO220AB IGBT
|
Original |
irg4bc30fd120khzo-220abfd100h06a5+3 | |
555 triangular wave
Abstract: IRG4BC30FD1PBF
|
Original |
irg4bc30fd1pbf20khzo-220abfd100h06a5+2 | |
|
Contextual Info: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter |
Original |
5614airg4bc30fd1pbf20khzo-220ab+1 | |
|
Contextual Info: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
Original |
-91451birg4bc30fdo-220ab | |
|
Contextual Info: SEMICONDUCTOR PG03JSUSC TECHNICAL DATA Single Line TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. L A H F Transient protection for data lines to 1 E 350 Watts peak pulse power tp=8/20 s K CATHODE MARK |
Original |
pg03jsusc5/50ns8/20us | |
IRG4PC30FDContextual Info: PD 9.1460A IRG4PC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
Original |
irg4pc30fdo-247ac | |
IRG4BC30FD
Abstract: fl 014
|
Original |
-91451birg4bc30fdo-220abfl 014 | |
IRG4PC30FDContextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
Original |
91460birg4pc30fdo-247ac | |
|
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|||
IRG4PC30FDContextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
Original |
91460birg4pc30fdo-247ac | |
|
Contextual Info: PD - 95556 IRG4PC30FDPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter |
Original |
irg4pc30fdpbfo-247acirfpe30 | |
|
Contextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
Original |
91460birg4pc30fdo-247ac | |
IRG4BC30FDContextual Info: PD 9.1451A IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter |
Original |
irg4bc30fdo-220ab | |
marking 34A
Abstract: PG03JSUSC ipp34
|
Original |
pg03jsusc5/50ns8/20usmarking 34a+1 | |
|
Contextual Info: PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter parameter |
Original |
4938airg4bc30fdpbf20khzo-220ab | |
|
Contextual Info: PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . Generation 4 IGBT design provides tighter parameter |
Original |
4938airg4bc30fdpbf20khzo-220ab | |
PG03JSUSCContextual Info: SEMICONDUCTOR PG03JSUSC TECHNICAL DATA Single Line TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES ・350 Watts peak pulse power tp=8/20 s ・Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) |
Original |
pg03jsusc5/50ns | |
IRG4BC30FDContextual Info: Previous Datasheet Index Next Data Sheet PD 9.1451 IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 |
Original |
irg4bc30fdo-220ab | |
IRG4PC30FD
Abstract: 5C100A
|
Original |
irg4pc30fdo-247ac5c100a | |