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    DIODE IN 34A Search Results

    DIODE IN 34A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ12V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Datasheet
    MUZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Datasheet
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Datasheet

    DIODE IN 34A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    035H

    Abstract: IRFPE30
    Contextual Info: PD - 95556 IRG4PC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4PC30FDPbF O-247AC IRFPE30 035H IRFPE30 PDF

    035H

    Abstract: IRFPE30
    Contextual Info: PD - 95556 IRG4PC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4PC30FDPbF O-247AC IRFPE30 035H IRFPE30 PDF

    IRF1010 E DATASHEET

    Abstract: IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC
    Contextual Info: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4BC30FD1 20kHz O-220AB char10 FD100H06A5. O-220 IRF1010 E DATASHEET IRF1010 IRG4BC30FD1 igbt rectifier circuit IRG4BC PDF

    swiching transistor

    Abstract: 9561 600v 8A ultra fast recovery diode to220
    Contextual Info: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4BC30FD1PbF 20kHz O-220AB Minimi10 FD100H06A5. O-220 swiching transistor 9561 600v 8A ultra fast recovery diode to220 PDF

    Contextual Info: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		5614A IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5. PDF

    Contextual Info: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4BC30FD1 20kHz O-220AB FD100H06A5. O-220 PDF

    IRF1010

    Abstract: IRG4BC30FD1 TO220AB IGBT
    Contextual Info: PD - 94773 IRG4BC30FD1 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4BC30FD1 20kHz O-220AB FD100H06A5. O-220 IRF1010 IRG4BC30FD1 TO220AB IGBT PDF

    555 triangular wave

    Abstract: IRG4BC30FD1PBF
    Contextual Info: PD - 95614 IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5. O-220 555 triangular wave IRG4BC30FD1PBF PDF

    Contextual Info: PD - 95614A IRG4BC30FD1PbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		5614A IRG4BC30FD1PbF 20kHz O-220AB FD100H06A5. PDF

    Contextual Info: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		-91451B IRG4BC30FD O-220AB PDF

    Contextual Info: SEMICONDUCTOR PG03JSUSC TECHNICAL DATA Single Line TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. L A H F Transient protection for data lines to 1 E 350 Watts peak pulse power tp=8/20 s K CATHODE MARK


    Original     		PG03JSUSC 5/50ns) 8/20us PDF

    IRG4PC30FD

    Contextual Info: PD 9.1460A IRG4PC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4PC30FD O-247AC IRG4PC30FD PDF

    IRG4BC30FD

    Abstract: fl 014
    Contextual Info: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		-91451B IRG4BC30FD O-220AB IRG4BC30FD fl 014 PDF

    IRG4PC30FD

    Contextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		91460B IRG4PC30FD O-247AC O-247AC IRG4PC30FD PDF

    IRG4PC30FD

    Contextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		91460B IRG4PC30FD O-247AC O-247AC IRG4PC30FD PDF

    Contextual Info: PD - 95556 IRG4PC30FDPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4PC30FDPbF O-247AC IRFPE30 PDF

    Contextual Info: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		91460B IRG4PC30FD O-247AC O-247AC PDF

    IRG4BC30FD

    Contextual Info: PD 9.1451A IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter


    Original     		IRG4BC30FD O-220AB IRG4BC30FD PDF

    marking 34A

    Abstract: PG03JSUSC ipp34
    Contextual Info: SEMICONDUCTOR PG03JSUSC TECHNICAL DATA Single Line TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. L A H F ・Transient protection for data lines to 1 E ・350 Watts peak pulse power tp=8/20 s K CATHODE MARK


    Original     		PG03JSUSC 5/50ns) 8/20us marking 34A PG03JSUSC ipp34 PDF

    Contextual Info: PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter


    Original     		4938A IRG4BC30FDPbF 20kHz O-220AB PDF

    Contextual Info: PD - 94938A IRG4BC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter


    Original     		4938A IRG4BC30FDPbF 20kHz O-220AB PDF

    PG03JSUSC

    Contextual Info: SEMICONDUCTOR PG03JSUSC TECHNICAL DATA Single Line TVS Diode for ESD Protection in Portable Electronics Protection in Portable Electronics Applications. FEATURES ・350 Watts peak pulse power tp=8/20 s ・Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)


    Original     		PG03JSUSC 5/50ns) PG03JSUSC PDF

    IRG4BC30FD

    Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1451 IRG4BC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20


    Original     		IRG4BC30FD O-220AB IRG4BC30FD PDF

    IRG4PC30FD

    Abstract: 5C100A
    Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1460 IRG4PC30FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20


    Original     		IRG4PC30FD O-247AC IRG4PC30FD 5C100A PDF