DIODE IK 60 Search Results

tunnel diode detector

Abstract: Tunnel Diode
Contextual Info: jy&Cßm 7700 Series Tunnel Diode Detector Performance 1400 1200 1000 5t ks L )A D > 3t 800 / ik a I 600 IK lo ad I L DAD 1C Of -a 400 r kQ LOA ) - 1.0 2 8 1 _l o • if o oc 0 0 ^ »D 200 50ka D '"LOAD — < *-1 LU Y 44- * I * i i 18 FREQUENCY GHZ)

Contextual Info: SHARR PC450T11 PC450T11 Photocoupler with BtriK-m Breakdown Diode for Surge Voltage Absorption • Features ■ O uline Dimensions Unit : mm 1. Built-in breakdown diode for absorption of surge voltage 2. High current transfer ratio (CTR : MIN. 2 000% at IK= 5mA)

Diode BAY 74

Abstract: BAY74 BAV74 74 MARKING
Contextual Info: SIEM EN S Silicon Switching Diode Array BAV 74 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel BAV 74 JAs Q62702-A693 Pin Configuration Package1) 3 SOT-23 IK o CHAO7004 Maximum Ratings per Diode Parameter Symbol Values

2x101-06 200A

Abstract: 2x101-06 DSEI 2X101-06 ixys dsei 2x101
Contextual Info: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x96 A VRRM = 600 V trr = 35 ns Type DSEI 2x 101-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5

QR200

Contextual Info: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x96 A VRRM = 600 V = 35 ns trr Type DSEI 2x 101-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5

IG8T

Contextual Info: s e M IK R O n SKiiP 462 GB 060 - 250 WT Absolute Maximum Ratings Symbol ¡Conditions " Values Units 600 400 400 800 - 4 0 . + 150 2500 400 800 4300 93 V V A A °C V A A A kA2s IG8T & Inverse Diode VcES Vcc 10> lc lew Tj 31 Visai 4 If Ifm Ifsm I2) Diode)

Contextual Info: '> 3 7 Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS S2S6M 60V 2A •TÌ150T: • P • EE rrsm 1 .O 0 U - K •SRffljg •D C /D C J V A -i’ y - A . OAfêâl • his . iK—5>yii,ms • Æ tè ü RATINGS Absolute Maximum Ratings h m Symbol Tstg

H11K1

Abstract: H11K
Contextual Info: Optoisolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, infrared em itting diode coupled with two high voltage silicon Darlingtonconnected phocotransistors which have integral base-emitter resistors

ESM6045DV

Contextual Info: SGS-THOMSON llO O M iL iC T IM iK S ESM 6045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE

ixys dsei 2x101

Abstract: IXYS DSEI 2 2x91A ixys dsei 2x91
Contextual Info: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x91 A VRRM = 1200 V trr = 40 ns Type DSEI 2x 101-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5

IXYS DSEI 2X121

Abstract: 121-02P 12102p 2x123
Contextual Info: DSEI 2x121 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 200 200 Type AC-1 IK-10 LN -9 VX-18 IFAVM = 2x123 A VRRM = 200 V trr = 35 ns DSEI 2x 121-02P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5

Contextual Info: DSEI 2x101 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 AC-1 IK-10 LN -9 VX-18 IFAVM = 2x91 A VRRM = 1200 V = 40 ns trr Type DSEI 2x 101-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5

SKiiP 613 GB

Contextual Info: s e m ik r d n SKiiP 312 GD 120 - 302 WT Absolute Maximum Ratings | Conditions 11 Values IGBT & Inve rse Diode V ces Operating DC link voltage Vc c 10 Theatsink ~ 25 °C lc Theatsink = 25 °C; tp < 1 ms ICM IGBT & Diode T | 3> AC, 1 min. ViSoi4) Theatsink = 25 °C

skiip gb 120

Contextual Info: s e M IK R D n SKiiP 402 GB 120 - 201 WT Absolute Maximum Ratings | Conditions IGBT & Inve rse Diode Vces Operating DC link voltage Vcc 11* Theatsink = 25 °C lc Theatsink = 25 °C; tp < 1 ms Icm IGBT & Diode T j3 V is o ,4» AC, 1 min. Theatsink = 25 °C

Contextual Info: SP3T SWITCHES Advanced Conffoi Components H ik . The S3 series of single pole, three throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of

Contextual Info: s e m ik r o n SKiiP 292 GD 170 - 375 CTV Absolute Maximum Ratings Symbol |Conditions 1 Values Units 1700 1200 250 - 4 0 . + 150 4000 250 500 2160 23,4 V IGBT & Inverse Diode VcES Vcc 91 lc T j3) V jgo l 4 ' If If m If s m l2t Diode) Operating D C fink voltage

esm20

Abstract: ESM2012DV
Contextual Info: SGS-THOMSON llO O M iL iC T IM iK S ES M 2012DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW R,h JUNCTION TO CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT

PSEI2X101

Abstract: 2x101-06 200A 2X101 DSEI 20-01 A 2x10-10 A1080-A
Contextual Info: ECO-PACTM 2 Fast Recovery Epitaxial Diode FRED PSEI 2x101 VRRM trr Preliminary Data Sheet VRSM VRRM Type (V) (V) 600 600 PSEI 2x101/06 Symbol Test Conditions IFRMS I FAVM* I FRM IFSM TVJ = TVJM ∫ i dt 2 TVJ TVJM Tstg VISOL IFAVM AC-1 IK-10 LN -9 VX-18

AX078

Abstract: MARKING JM 251C 25T160 d2s4m D2S4 122T
Contextual Info: Schottky Barrier Diode Axial Diode OUTLINE D2S4M Unit : mm Package I AX078 W eight 0.38g Typ 40V 2A CD = E Feature • Tj=15CfC • T j= 1 5 0 °C • P rrsm P K ^ V î/x (S ü E • P rrsm 27.5 Rating 27.5 I Main Use M * iS M iK im M arking • Switching Regulator

Contextual Info: Schottky Barrier Diode Twin Diode W tm S60SC4M 40V OUTLINE A Feature • Tj=150°C • Tj=150°C • PRRSM T ’A ' i ^ V Î ' I ' K i E • P rrsm • * i « S • Small B jc • High lo Rating i Rating Main Use • Switching Regulator • DC/DC Z iy iK —S

SKIIP832GB

Abstract: skiip 832 gb 120
Contextual Info: s em ik r d n SKiiP 832 GB 120 - 406 CTV Absolute Maximum Ratings Symbol Values Units 1200 900 800 - 4 0 . + 150 3000 5 800 1600 8600 374 V V A °C V A A A kA2s |Conditions1) IG BT & inverse Diode VcES V c c 9» lc Ti 3} V is o l 41 If Ifm Ifsm l2t Diode)

Contextual Info: 5 Ü 8 È X /W :* y a 7 jnting Device Surface Moun.ing^Device K 7 Schottky Barrier Diode K S Diode Array OUTLINE DIMENSIONS S1ZAS4 40V 1.2A •S M D • T j 1 50TC •P rrs m % T \j - •SR B S •D C /D C Z iy iK - 9 •m m , y -A . oa«h •a«. Tti-^jutü

S2L60

Abstract: loa marking code
Contextual Info: Super Fast Recovery Diode Axial Diode OUTLINE S2L60 Unit : mm Package : AX10 W eight O .ffig iT y p 6 0 0 V 1 .5A Feature 26.5 • r a M ± FRD • High Voltage Super FRD • ñ S 'íX • Low Noise • trr=50ns • trr=50ns .1 cR4 26.5 -O . - 2 - * ftm iiA iK m

diode SKN molybdenum

Contextual Info: s e m ik r d n Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips , T^ es $ Y s k n 3